FR2201464B1 - - Google Patents

Info

Publication number
FR2201464B1
FR2201464B1 FR7335213A FR7335213A FR2201464B1 FR 2201464 B1 FR2201464 B1 FR 2201464B1 FR 7335213 A FR7335213 A FR 7335213A FR 7335213 A FR7335213 A FR 7335213A FR 2201464 B1 FR2201464 B1 FR 2201464B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7335213A
Other versions
FR2201464A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of FR2201464A1 publication Critical patent/FR2201464A1/fr
Application granted granted Critical
Publication of FR2201464B1 publication Critical patent/FR2201464B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
FR7335213A 1972-10-02 1973-10-02 Expired FR2201464B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US29395872A 1972-10-02 1972-10-02

Publications (2)

Publication Number Publication Date
FR2201464A1 FR2201464A1 (fr) 1974-04-26
FR2201464B1 true FR2201464B1 (fr) 1977-05-27

Family

ID=23131288

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7335213A Expired FR2201464B1 (fr) 1972-10-02 1973-10-02

Country Status (4)

Country Link
JP (1) JPS4976489A (fr)
DE (1) DE2349463B2 (fr)
FR (1) FR2201464B1 (fr)
GB (1) GB1399988A (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2644638A1 (de) * 1975-10-06 1977-04-07 Honeywell Inc Verfahren zur herstellung eines halbleiter-druckfuehlers sowie nach diesem verfahren hergestellter druckfuehler
US4071838A (en) * 1976-02-09 1978-01-31 Diax Corporation Solid state force transducer and method of making same
US4203128A (en) 1976-11-08 1980-05-13 Wisconsin Alumni Research Foundation Electrostatically deformable thin silicon membranes
JPS53108879U (fr) * 1977-02-08 1978-08-31
FR2380640A1 (fr) * 1977-02-09 1978-09-08 Diax Corp Transducteur d'energie a l'etat solide et son procede de fabrication
US4234361A (en) 1979-07-05 1980-11-18 Wisconsin Alumni Research Foundation Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer
JPS5828876A (ja) * 1981-08-12 1983-02-19 Mitsubishi Electric Corp 半導体圧力センサ装置
JPS59117271A (ja) * 1982-12-24 1984-07-06 Hitachi Ltd 圧力感知素子を有する半導体装置とその製造法
GB2144857A (en) * 1983-08-12 1985-03-13 Prutec Ltd Piezo resistive transducer
US4658279A (en) * 1983-09-08 1987-04-14 Wisconsin Alumini Research Foundation Velocity saturated strain sensitive semiconductor devices
JPH0712086B2 (ja) * 1984-01-27 1995-02-08 株式会社日立製作所 ダイヤフラムセンサの製造方法
FR2746919B1 (fr) * 1996-03-28 1998-04-24 Commissariat Energie Atomique Capteur a jauge de contrainte utilisant l'effet piezoresistif et son procede de fabrication
EP0822398B1 (fr) * 1996-07-31 2003-04-23 STMicroelectronics S.r.l. Capteur intégré piézorésistif de pression et méthode de fabrication d'un tel capteur
DE19741428A1 (de) * 1997-09-19 1999-04-01 Siemens Ag Halbleitersensor mit einem Grundkörper und wenigstens einem Verformungskörper
US6278167B1 (en) 1998-08-14 2001-08-21 Infineon Technologies Ag Semiconductor sensor with a base element and at least one deformation element
US10023461B2 (en) 2014-10-31 2018-07-17 Stmicroelectronics S.R.L. Microintegrated encapsulated MEMS sensor with mechanical decoupling and manufacturing process thereof

Also Published As

Publication number Publication date
DE2349463B2 (de) 1975-08-07
FR2201464A1 (fr) 1974-04-26
JPS4976489A (fr) 1974-07-23
DE2349463A1 (de) 1974-04-18
GB1399988A (en) 1975-07-02

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Legal Events

Date Code Title Description
ST Notification of lapse