JPS4976489A - - Google Patents

Info

Publication number
JPS4976489A
JPS4976489A JP11023273A JP11023273A JPS4976489A JP S4976489 A JPS4976489 A JP S4976489A JP 11023273 A JP11023273 A JP 11023273A JP 11023273 A JP11023273 A JP 11023273A JP S4976489 A JPS4976489 A JP S4976489A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11023273A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4976489A publication Critical patent/JPS4976489A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
JP11023273A 1972-10-02 1973-10-02 Pending JPS4976489A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US29395872A 1972-10-02 1972-10-02

Publications (1)

Publication Number Publication Date
JPS4976489A true JPS4976489A (ja) 1974-07-23

Family

ID=23131288

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11023273A Pending JPS4976489A (ja) 1972-10-02 1973-10-02

Country Status (4)

Country Link
JP (1) JPS4976489A (ja)
DE (1) DE2349463B2 (ja)
FR (1) FR2201464B1 (ja)
GB (1) GB1399988A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108879U (ja) * 1977-02-08 1978-08-31
JPH1022510A (ja) * 1996-03-28 1998-01-23 Commiss Energ Atom 圧電抵抗作用を使用する歪みゲージセンサおよびその製造方法

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2644638A1 (de) * 1975-10-06 1977-04-07 Honeywell Inc Verfahren zur herstellung eines halbleiter-druckfuehlers sowie nach diesem verfahren hergestellter druckfuehler
US4071838A (en) * 1976-02-09 1978-01-31 Diax Corporation Solid state force transducer and method of making same
US4203128A (en) 1976-11-08 1980-05-13 Wisconsin Alumni Research Foundation Electrostatically deformable thin silicon membranes
FR2380640A1 (fr) * 1977-02-09 1978-09-08 Diax Corp Transducteur d'energie a l'etat solide et son procede de fabrication
US4234361A (en) 1979-07-05 1980-11-18 Wisconsin Alumni Research Foundation Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer
JPS5828876A (ja) * 1981-08-12 1983-02-19 Mitsubishi Electric Corp 半導体圧力センサ装置
JPS59117271A (ja) * 1982-12-24 1984-07-06 Hitachi Ltd 圧力感知素子を有する半導体装置とその製造法
GB2144857A (en) * 1983-08-12 1985-03-13 Prutec Ltd Piezo resistive transducer
US4658279A (en) * 1983-09-08 1987-04-14 Wisconsin Alumini Research Foundation Velocity saturated strain sensitive semiconductor devices
JPH0712086B2 (ja) * 1984-01-27 1995-02-08 株式会社日立製作所 ダイヤフラムセンサの製造方法
EP0822398B1 (en) * 1996-07-31 2003-04-23 STMicroelectronics S.r.l. Integrated piezoresistive pressure sensor and relative fabrication method
DE19741428A1 (de) * 1997-09-19 1999-04-01 Siemens Ag Halbleitersensor mit einem Grundkörper und wenigstens einem Verformungskörper
US6278167B1 (en) 1998-08-14 2001-08-21 Infineon Technologies Ag Semiconductor sensor with a base element and at least one deformation element
US10023461B2 (en) 2014-10-31 2018-07-17 Stmicroelectronics S.R.L. Microintegrated encapsulated MEMS sensor with mechanical decoupling and manufacturing process thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108879U (ja) * 1977-02-08 1978-08-31
JPH1022510A (ja) * 1996-03-28 1998-01-23 Commiss Energ Atom 圧電抵抗作用を使用する歪みゲージセンサおよびその製造方法

Also Published As

Publication number Publication date
DE2349463B2 (de) 1975-08-07
FR2201464A1 (ja) 1974-04-26
DE2349463A1 (de) 1974-04-18
GB1399988A (en) 1975-07-02
FR2201464B1 (ja) 1977-05-27

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