ES442102A1 - Un dispositivo semiconductor. - Google Patents
Un dispositivo semiconductor.Info
- Publication number
- ES442102A1 ES442102A1 ES442102A ES442102A ES442102A1 ES 442102 A1 ES442102 A1 ES 442102A1 ES 442102 A ES442102 A ES 442102A ES 442102 A ES442102 A ES 442102A ES 442102 A1 ES442102 A1 ES 442102A1
- Authority
- ES
- Spain
- Prior art keywords
- substrate
- insulating layer
- semiconductor device
- passivating layers
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 229920002050 silicone resin Polymers 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3192—Multilayer coating
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
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- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
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- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
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- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/905—Plural dram cells share common contact or common trench
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
- Non-Volatile Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP49123765A JPS6022497B2 (ja) | 1974-10-26 | 1974-10-26 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
ES442102A1 true ES442102A1 (es) | 1977-03-16 |
Family
ID=14868714
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES442102A Expired ES442102A1 (es) | 1974-10-26 | 1975-10-25 | Un dispositivo semiconductor. |
Country Status (15)
Country | Link |
---|---|
US (1) | US4063275A (es) |
JP (1) | JPS6022497B2 (es) |
AT (1) | AT370561B (es) |
AU (1) | AU504667B2 (es) |
BR (1) | BR7506996A (es) |
CA (1) | CA1046650A (es) |
CH (1) | CH608653A5 (es) |
DE (1) | DE2547304A1 (es) |
DK (1) | DK142758B (es) |
ES (1) | ES442102A1 (es) |
FR (1) | FR2290040A1 (es) |
GB (1) | GB1515179A (es) |
IT (1) | IT1044592B (es) |
NL (1) | NL183260C (es) |
SE (1) | SE411606B (es) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2632647A1 (de) * | 1976-07-20 | 1978-01-26 | Siemens Ag | Halbleiterbauelement mit passivierender schutzschicht |
IN147578B (es) * | 1977-02-24 | 1980-04-19 | Rca Corp | |
DE2730367A1 (de) * | 1977-07-05 | 1979-01-18 | Siemens Ag | Verfahren zum passivieren von halbleiterelementen |
US4174252A (en) * | 1978-07-26 | 1979-11-13 | Rca Corporation | Method of defining contact openings in insulating layers on semiconductor devices without the formation of undesirable pinholes |
CA1136773A (en) * | 1978-08-14 | 1982-11-30 | Norikazu Ohuchi | Semiconductor device |
FR2459551A1 (fr) * | 1979-06-19 | 1981-01-09 | Thomson Csf | Procede et structure de passivation a autoalignement sur l'emplacement d'un masque |
GB2071411B (en) * | 1980-03-07 | 1983-12-21 | Philips Electronic Associated | Passivating p-n junction devices |
US4344985A (en) * | 1981-03-27 | 1982-08-17 | Rca Corporation | Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer |
US4420765A (en) * | 1981-05-29 | 1983-12-13 | Rca Corporation | Multi-layer passivant system |
AT384121B (de) * | 1983-03-28 | 1987-10-12 | Shell Austria | Verfahren zum gettern von halbleiterbauelementen |
JPS6042859A (ja) * | 1983-08-19 | 1985-03-07 | Toshiba Corp | 高耐圧半導体装置の製造方法 |
JPS61222172A (ja) * | 1985-03-15 | 1986-10-02 | Sharp Corp | Mosfetのゲ−ト絶縁膜形成方法 |
JPS6276673A (ja) * | 1985-09-30 | 1987-04-08 | Toshiba Corp | 高耐圧半導体装置 |
DE3542166A1 (de) * | 1985-11-29 | 1987-06-04 | Telefunken Electronic Gmbh | Halbleiterbauelement |
EP0388612B1 (en) * | 1989-03-24 | 1994-11-30 | International Business Machines Corporation | Semiconductor device with self-aligned contact to buried subcollector |
JPH04343479A (ja) * | 1991-05-21 | 1992-11-30 | Nec Yamagata Ltd | 可変容量ダイオード |
EP0620586B1 (en) * | 1993-04-05 | 2001-06-20 | Denso Corporation | Semiconductor device having thin film resistor |
US6242792B1 (en) | 1996-07-02 | 2001-06-05 | Denso Corporation | Semiconductor device having oblique portion as reflection |
CN1293374C (zh) * | 2002-04-17 | 2007-01-03 | 北京师范大学 | 能直接测量波长的新结构光电探测器及其探测方法 |
CN111816574B (zh) * | 2020-05-29 | 2022-03-04 | 济宁东方芯电子科技有限公司 | 一种uv膜模板及利用uv膜模板实现洁净玻璃钝化的方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2789258A (en) * | 1955-06-29 | 1957-04-16 | Raytheon Mfg Co | Intrinsic coatings for semiconductor junctions |
DE1184178B (de) * | 1960-02-20 | 1964-12-23 | Standard Elektrik Lorenz Ag | Verfahren zum Stabilisieren der Oberflaeche von Halbleiterkoerpern mit pn-UEbergaengen durch Vakuumbedampfen |
CH428947A (fr) * | 1966-01-31 | 1967-01-31 | Centre Electron Horloger | Procédé de fabrication d'un circuit intégré |
GB1211354A (en) * | 1966-12-01 | 1970-11-04 | Gen Electric | Improvements relating to passivated semiconductor devices |
DE1614455C3 (de) * | 1967-03-16 | 1979-07-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen einer teils aus Siliciumoxid, teils aus Siliciumnitrid bestehenden Schutzschicht an der Oberfläche eines Halbleiterkörpers |
US3419746A (en) * | 1967-05-25 | 1968-12-31 | Bell Telephone Labor Inc | Light sensitive storage device including diode array |
US3440477A (en) * | 1967-10-18 | 1969-04-22 | Bell Telephone Labor Inc | Multiple readout electron beam device |
NL162250C (nl) * | 1967-11-21 | 1980-04-15 | Philips Nv | Halfgeleiderinrichting met een halfgeleiderlichaam, waarvan aan een hoofdoppervlak het halfgeleideroppervlak plaatselijk met een oxydelaag is bedekt, en werkwijze voor het vervaardigen van planaire halfgeleider- inrichtingen. |
US3558348A (en) * | 1968-04-18 | 1971-01-26 | Bell Telephone Labor Inc | Dielectric films for semiconductor devices |
US3615913A (en) * | 1968-11-08 | 1971-10-26 | Westinghouse Electric Corp | Polyimide and polyamide-polyimide as a semiconductor surface passivator and protectant coating |
JPS497870B1 (es) * | 1969-06-06 | 1974-02-22 | ||
US3878549A (en) * | 1970-10-27 | 1975-04-15 | Shumpei Yamazaki | Semiconductor memories |
DE2220807A1 (de) * | 1971-04-30 | 1972-11-16 | Texas Instruments Inc | Verfahren und Vorrichtung zum Abscheiden von polykristallinen Duennfilmen aus Silicium und Siliciumdioxid auf Halbleitersubstraten |
NL7204741A (es) * | 1972-04-08 | 1973-10-10 | ||
JPS532552B2 (es) * | 1974-03-30 | 1978-01-28 |
-
1974
- 1974-10-26 JP JP49123765A patent/JPS6022497B2/ja not_active Expired
-
1975
- 1975-10-22 DE DE19752547304 patent/DE2547304A1/de active Granted
- 1975-10-22 US US05/624,889 patent/US4063275A/en not_active Expired - Lifetime
- 1975-10-23 GB GB43656/75A patent/GB1515179A/en not_active Expired
- 1975-10-23 CH CH1371375A patent/CH608653A5/xx not_active IP Right Cessation
- 1975-10-23 CA CA238,212A patent/CA1046650A/en not_active Expired
- 1975-10-24 AU AU85991/75A patent/AU504667B2/en not_active Expired
- 1975-10-24 IT IT28663/75A patent/IT1044592B/it active
- 1975-10-24 SE SE7511927A patent/SE411606B/xx not_active Application Discontinuation
- 1975-10-24 BR BR7506996*A patent/BR7506996A/pt unknown
- 1975-10-24 DK DK480275AA patent/DK142758B/da not_active IP Right Cessation
- 1975-10-25 ES ES442102A patent/ES442102A1/es not_active Expired
- 1975-10-27 FR FR7532826A patent/FR2290040A1/fr active Granted
- 1975-10-27 AT AT0818475A patent/AT370561B/de not_active IP Right Cessation
- 1975-10-27 NL NLAANVRAGE7512559,A patent/NL183260C/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CA1046650A (en) | 1979-01-16 |
DE2547304C2 (es) | 1988-08-11 |
AT370561B (de) | 1983-04-11 |
AU8599175A (en) | 1977-04-28 |
DK142758C (es) | 1981-08-10 |
BR7506996A (pt) | 1976-08-17 |
US4063275A (en) | 1977-12-13 |
IT1044592B (it) | 1980-03-31 |
DE2547304A1 (de) | 1976-04-29 |
SE411606B (sv) | 1980-01-14 |
FR2290040A1 (fr) | 1976-05-28 |
DK142758B (da) | 1981-01-12 |
AU504667B2 (en) | 1979-10-25 |
NL183260C (nl) | 1988-09-01 |
DK480275A (es) | 1976-04-27 |
FR2290040B1 (es) | 1979-08-17 |
SE7511927L (sv) | 1976-04-27 |
JPS5149686A (es) | 1976-04-30 |
JPS6022497B2 (ja) | 1985-06-03 |
GB1515179A (en) | 1978-06-21 |
NL7512559A (nl) | 1976-04-28 |
NL183260B (nl) | 1988-04-05 |
CH608653A5 (es) | 1979-01-15 |
ATA818475A (de) | 1982-08-15 |
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