IT1044592B - Dispositivo semiconduttor - Google Patents

Dispositivo semiconduttor

Info

Publication number
IT1044592B
IT1044592B IT28663/75A IT2866375A IT1044592B IT 1044592 B IT1044592 B IT 1044592B IT 28663/75 A IT28663/75 A IT 28663/75A IT 2866375 A IT2866375 A IT 2866375A IT 1044592 B IT1044592 B IT 1044592B
Authority
IT
Italy
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
IT28663/75A
Other languages
English (en)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of IT1044592B publication Critical patent/IT1044592B/it

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3192—Multilayer coating
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    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/905—Plural dram cells share common contact or common trench
IT28663/75A 1974-10-26 1975-10-24 Dispositivo semiconduttor IT1044592B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP49123765A JPS6022497B2 (ja) 1974-10-26 1974-10-26 半導体装置

Publications (1)

Publication Number Publication Date
IT1044592B true IT1044592B (it) 1980-03-31

Family

ID=14868714

Family Applications (1)

Application Number Title Priority Date Filing Date
IT28663/75A IT1044592B (it) 1974-10-26 1975-10-24 Dispositivo semiconduttor

Country Status (15)

Country Link
US (1) US4063275A (it)
JP (1) JPS6022497B2 (it)
AT (1) AT370561B (it)
AU (1) AU504667B2 (it)
BR (1) BR7506996A (it)
CA (1) CA1046650A (it)
CH (1) CH608653A5 (it)
DE (1) DE2547304A1 (it)
DK (1) DK142758B (it)
ES (1) ES442102A1 (it)
FR (1) FR2290040A1 (it)
GB (1) GB1515179A (it)
IT (1) IT1044592B (it)
NL (1) NL183260C (it)
SE (1) SE411606B (it)

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IN147578B (it) * 1977-02-24 1980-04-19 Rca Corp
DE2730367A1 (de) * 1977-07-05 1979-01-18 Siemens Ag Verfahren zum passivieren von halbleiterelementen
US4174252A (en) * 1978-07-26 1979-11-13 Rca Corporation Method of defining contact openings in insulating layers on semiconductor devices without the formation of undesirable pinholes
CA1136773A (en) * 1978-08-14 1982-11-30 Norikazu Ohuchi Semiconductor device
FR2459551A1 (fr) * 1979-06-19 1981-01-09 Thomson Csf Procede et structure de passivation a autoalignement sur l'emplacement d'un masque
GB2071411B (en) * 1980-03-07 1983-12-21 Philips Electronic Associated Passivating p-n junction devices
US4344985A (en) * 1981-03-27 1982-08-17 Rca Corporation Method of passivating a semiconductor device with a multi-layer passivant system by thermally growing a layer of oxide on an oxygen doped polycrystalline silicon layer
US4420765A (en) * 1981-05-29 1983-12-13 Rca Corporation Multi-layer passivant system
AT384121B (de) * 1983-03-28 1987-10-12 Shell Austria Verfahren zum gettern von halbleiterbauelementen
JPS6042859A (ja) * 1983-08-19 1985-03-07 Toshiba Corp 高耐圧半導体装置の製造方法
JPS61222172A (ja) * 1985-03-15 1986-10-02 Sharp Corp Ｍｏｓｆｅｔのゲ−ト絶縁膜形成方法
JPS6276673A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 高耐圧半導体装置
DE3542166A1 (de) * 1985-11-29 1987-06-04 Telefunken Electronic Gmbh Halbleiterbauelement
DE69014359T2 (de) * 1989-03-24 1995-05-24 Ibm Halbleitervorrichtung mit einem relativ zu einem vergrabenen Subkollektor selbstausgerichteten Kontakt.
JPH04343479A (ja) * 1991-05-21 1992-11-30 Nec Yamagata Ltd 可変容量ダイオード
EP0620586B1 (en) * 1993-04-05 2001-06-20 Denso Corporation Semiconductor device having thin film resistor
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CH608653A5 (it) 1979-01-15
ATA818475A (de) 1982-08-15
DK142758C (it) 1981-08-10
ES442102A1 (es) 1977-03-16
JPS6022497B2 (ja) 1985-06-03
FR2290040A1 (fr) 1976-05-28
FR2290040B1 (it) 1979-08-17
AT370561B (de) 1983-04-11
SE7511927L (sv) 1976-04-27
SE411606B (sv) 1980-01-14
CA1046650A (en) 1979-01-16
AU8599175A (en) 1977-04-28
NL183260B (nl) 1988-04-05
DK142758B (da) 1981-01-12
DE2547304C2 (it) 1988-08-11
BR7506996A (pt) 1976-08-17
DK480275A (it) 1976-04-27
US4063275A (en) 1977-12-13
DE2547304A1 (de) 1976-04-29
JPS5149686A (it) 1976-04-30
GB1515179A (en) 1978-06-21
NL183260C (nl) 1988-09-01
AU504667B2 (en) 1979-10-25
NL7512559A (nl) 1976-04-28

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