FR2828008B1 - Organe de traitement de tranches semi-conductrices - Google Patents

Organe de traitement de tranches semi-conductrices

Info

Publication number
FR2828008B1
FR2828008B1 FR0209659A FR0209659A FR2828008B1 FR 2828008 B1 FR2828008 B1 FR 2828008B1 FR 0209659 A FR0209659 A FR 0209659A FR 0209659 A FR0209659 A FR 0209659A FR 2828008 B1 FR2828008 B1 FR 2828008B1
Authority
FR
France
Prior art keywords
semiconductor wafer
wafer processing
processing body
semiconductor
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0209659A
Other languages
English (en)
Other versions
FR2828008A1 (fr
Inventor
Hirotaka Hagihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Publication of FR2828008A1 publication Critical patent/FR2828008A1/fr
Application granted granted Critical
Publication of FR2828008B1 publication Critical patent/FR2828008B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
FR0209659A 2001-07-30 2002-07-30 Organe de traitement de tranches semi-conductrices Expired - Fee Related FR2828008B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001230133 2001-07-30
JP2002013175A JP4183945B2 (ja) 2001-07-30 2002-01-22 ウェーハ熱処理用部材

Publications (2)

Publication Number Publication Date
FR2828008A1 FR2828008A1 (fr) 2003-01-31
FR2828008B1 true FR2828008B1 (fr) 2003-11-28

Family

ID=26619568

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0209659A Expired - Fee Related FR2828008B1 (fr) 2001-07-30 2002-07-30 Organe de traitement de tranches semi-conductrices

Country Status (5)

Country Link
US (1) US20030089458A1 (fr)
JP (1) JP4183945B2 (fr)
KR (1) KR100520914B1 (fr)
DE (1) DE10234698A1 (fr)
FR (1) FR2828008B1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130079875A (ko) * 2012-01-03 2013-07-11 엘지이노텍 주식회사 웨이퍼 캐리어 및 이를 구비하는 반도체 제조장치
JP5970841B2 (ja) * 2012-02-14 2016-08-17 三菱電機株式会社 ウエハホルダ、成膜装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6389490A (ja) * 1986-09-30 1988-04-20 Toshiba Ceramics Co Ltd ウエ−ハ加熱用治具
JPS6447019A (en) * 1987-08-18 1989-02-21 Denki Kagaku Kogyo Kk Glassy carbon coated susceptor
JP2566796B2 (ja) * 1987-11-11 1996-12-25 東芝セラミックス株式会社 気相成長装置
JPH07118465B2 (ja) * 1988-06-14 1995-12-18 東芝セラミックス株式会社 縦型エピタキシャル装置用サセプター
JP2638649B2 (ja) * 1989-12-22 1997-08-06 東京エレクトロン株式会社 静電チャック
US5192849A (en) * 1990-08-10 1993-03-09 Texas Instruments Incorporated Multipurpose low-thermal-mass chuck for semiconductor processing equipment
JP3258042B2 (ja) * 1991-08-21 2002-02-18 キヤノン株式会社 ウエハチャック
JPH0693453A (ja) * 1991-10-17 1994-04-05 Denki Kagaku Kogyo Kk サセプタ
US5420472A (en) * 1992-06-11 1995-05-30 Motorola, Inc. Method and apparatus for thermal coefficient of expansion matched substrate attachment
JPH0610140A (ja) * 1992-06-24 1994-01-18 Fuji Film Micro Device Kk 薄膜堆積装置
JP2750650B2 (ja) * 1993-01-28 1998-05-13 東京エレクトロン株式会社 Ｃｖｄ装置のウエハキヤリア
US5886863A (en) * 1995-05-09 1999-03-23 Kyocera Corporation Wafer support member
JPH0949890A (ja) * 1995-08-04 1997-02-18 Hitachi Chem Co Ltd プラズマ又はビーム対向板
US5584936A (en) * 1995-12-14 1996-12-17 Cvd, Incorporated Susceptor for semiconductor wafer processing
JP3565469B2 (ja) * 1997-02-10 2004-09-15 東芝セラミックス株式会社 気相成長用のサセプタ
US5910221A (en) * 1997-06-18 1999-06-08 Applied Materials, Inc. Bonded silicon carbide parts in a plasma reactor
DE19803423C2 (de) * 1998-01-29 2001-02-08 Siemens Ag Substrathalterung für SiC-Epitaxie und Verfahren zum Herstellen eines Einsatzes für einen Suszeptor
JP3685627B2 (ja) * 1998-10-21 2005-08-24 東芝セラミックス株式会社 コーティング膜を有するカーボン材料
JP2000355766A (ja) * 1999-06-15 2000-12-26 Hitachi Kokusai Electric Inc 基板処理装置及び基板処理方法

Also Published As

Publication number Publication date
KR20030011634A (ko) 2003-02-11
JP4183945B2 (ja) 2008-11-19
JP2003115461A (ja) 2003-04-18
DE10234698A1 (de) 2003-02-13
KR100520914B1 (ko) 2005-10-11
FR2828008A1 (fr) 2003-01-31
US20030089458A1 (en) 2003-05-15

Similar Documents

Publication Publication Date Title
AU2034802A (en) Semiconductor wafer processing to increase the usable planar surface area
DE60238291D1 (de) Wafer-Haltevorrichtung
DE60209255D1 (de) Dynamische präsenzverarbeitung
DE60238361D1 (de) Halbleitersubstratschablone
DE60140809D1 (de) Plasmaverarbeitungsvorrichtung
DE60233089D1 (de) Vertikale Waferhaltevorrichtung
DE60202425D1 (de) Hochfrequenz-Halbleitervorrichtung
DE60231151D1 (de) Silizium-mikrofon
DE60219113D1 (de) Polierkissen für Halbleiter-Wafer
DE50112868D1 (de) Halbleiter-chip
DE60128339D1 (de) Halbleiterscheibeschale
DE60227475D1 (de) Halbleiterbauelement
DE60022860D1 (de) Waferbearbeitungssystem
DE60027510D1 (de) Halbleiterscheibe Poliervorrichtung
DE60211244D1 (de) Halbleiterbauelement
DE60230840D1 (de) Halbleiteranordnung und Herstellungsverfahren dafür
DE60142141D1 (de) Halbleiterbauelement
DE60032324D1 (de) Wafer-Behandlungsvorrichtung
ITMI20021469A0 (it) Ravvivatura di utensili di rettifica per la rettifica di dentatura
DE10191585B8 (de) Halbleitervorrichtung
DE60225790D1 (de) Halbleiterbauelement
DE60231358D1 (de) Halbleiter-Schaltvorrichtung
DE60221625D1 (de) Integrierte Halbleiterschaltung
DE60233615D1 (de) Halbleiterschaltanordnung
FR2828008B1 (fr) Organe de traitement de tranches semi-conductrices

Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse

Effective date: 20110331