DE60231358D1 - Halbleiter-Schaltvorrichtung - Google Patents

Halbleiter-Schaltvorrichtung

Info

Publication number
DE60231358D1
DE60231358D1 DE60231358T DE60231358T DE60231358D1 DE 60231358 D1 DE60231358 D1 DE 60231358D1 DE 60231358 T DE60231358 T DE 60231358T DE 60231358 T DE60231358 T DE 60231358T DE 60231358 D1 DE60231358 D1 DE 60231358D1
Authority
DE
Germany
Prior art keywords
switching device
semiconductor switching
semiconductor
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60231358T
Other languages
English (en)
Inventor
Tetsuro Asano
Toshikazu Hirai
Mikito Sakakibara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Application granted granted Critical
Publication of DE60231358D1 publication Critical patent/DE60231358D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/16—Auxiliary devices for mode selection, e.g. mode suppression or mode promotion; for mode conversion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/04106—Modifications for accelerating switching without feedback from the output circuit to the control circuit in field-effect transistor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
DE60231358T 2001-06-08 2002-06-10 Halbleiter-Schaltvorrichtung Expired - Fee Related DE60231358D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001173498A JP2002368194A (ja) 2001-06-08 2001-06-08 化合物半導体スイッチ回路装置

Publications (1)

Publication Number Publication Date
DE60231358D1 true DE60231358D1 (de) 2009-04-16

Family

ID=19014942

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60231358T Expired - Fee Related DE60231358D1 (de) 2001-06-08 2002-06-10 Halbleiter-Schaltvorrichtung

Country Status (7)

Country Link
US (1) US6627956B2 (de)
EP (1) EP1265284B1 (de)
JP (1) JP2002368194A (de)
KR (1) KR100612185B1 (de)
CN (1) CN1193427C (de)
DE (1) DE60231358D1 (de)
TW (1) TW560013B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007727A (ja) * 2001-06-22 2003-01-10 Sanyo Electric Co Ltd 化合物半導体装置
JP4535668B2 (ja) 2002-09-09 2010-09-01 三洋電機株式会社 半導体装置
KR100685359B1 (ko) 2002-09-09 2007-02-22 산요덴키가부시키가이샤 보호 소자
US7105431B2 (en) 2003-08-22 2006-09-12 Micron Technology, Inc. Masking methods
TWI283517B (en) 2003-09-30 2007-07-01 Rohm Co Ltd D/A converter circuit, organic EL drive circuit and organic EL display device
JP2005340550A (ja) 2004-05-28 2005-12-08 Sanyo Electric Co Ltd 半導体装置
JP2005353991A (ja) 2004-06-14 2005-12-22 Sanyo Electric Co Ltd 半導体装置
US7212018B2 (en) * 2004-10-21 2007-05-01 Lecroy Corporation Dual tip probe
JP4939750B2 (ja) 2004-12-22 2012-05-30 オンセミコンダクター・トレーディング・リミテッド 化合物半導体スイッチ回路装置
JP4939749B2 (ja) 2004-12-22 2012-05-30 オンセミコンダクター・トレーディング・リミテッド 化合物半導体スイッチ回路装置
JP4939748B2 (ja) * 2004-12-22 2012-05-30 オンセミコンダクター・トレーディング・リミテッド 化合物半導体スイッチ回路装置
JP4480735B2 (ja) * 2007-03-22 2010-06-16 日本電信電話株式会社 電界通信装置
JP2017130577A (ja) * 2016-01-21 2017-07-27 ソニー株式会社 半導体装置およびその製造方法、固体撮像素子、並びに電子機器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63238716A (ja) * 1986-11-14 1988-10-04 Nec Corp スイッチ回路
US5317290A (en) 1987-10-19 1994-05-31 General Electric Company MMIC (monolithic microwave integrated circuit) switchable bidirectional phase shift network
JPH01291506A (ja) * 1988-05-18 1989-11-24 Matsushita Electron Corp 半導体装置
JPH06112795A (ja) * 1992-07-31 1994-04-22 Hewlett Packard Co <Hp> 信号切換回路および信号生成回路
JP3169775B2 (ja) * 1994-08-29 2001-05-28 株式会社日立製作所 半導体回路、スイッチ及びそれを用いた通信機
JP3249393B2 (ja) 1995-09-28 2002-01-21 株式会社東芝 スイッチ回路
US5973557A (en) * 1996-10-18 1999-10-26 Matsushita Electric Industrial Co., Ltd. High efficiency linear power amplifier of plural frequency bands and high efficiency power amplifier
JP3310203B2 (ja) * 1997-07-25 2002-08-05 株式会社東芝 高周波スイッチ装置
JP3831575B2 (ja) 2000-05-15 2006-10-11 三洋電機株式会社 化合物半導体スイッチ回路装置
US6580107B2 (en) * 2000-10-10 2003-06-17 Sanyo Electric Co., Ltd. Compound semiconductor device with depletion layer stop region
JP2002353411A (ja) * 2001-05-25 2002-12-06 Sanyo Electric Co Ltd 化合物半導体スイッチ回路装置

Also Published As

Publication number Publication date
CN1391282A (zh) 2003-01-15
JP2002368194A (ja) 2002-12-20
US20020185667A1 (en) 2002-12-12
KR20020093613A (ko) 2002-12-16
EP1265284B1 (de) 2009-03-04
EP1265284A1 (de) 2002-12-11
TW560013B (en) 2003-11-01
KR100612185B1 (ko) 2006-08-16
CN1193427C (zh) 2005-03-16
US6627956B2 (en) 2003-09-30

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee