FR2682534B1 - Dispositif a semiconducteurs comportant un empilement de sections d'electrode de grille, et procede de fabrication de ce dispositif. - Google Patents

Dispositif a semiconducteurs comportant un empilement de sections d'electrode de grille, et procede de fabrication de ce dispositif.

Info

Publication number
FR2682534B1
FR2682534B1 FR9212298A FR9212298A FR2682534B1 FR 2682534 B1 FR2682534 B1 FR 2682534B1 FR 9212298 A FR9212298 A FR 9212298A FR 9212298 A FR9212298 A FR 9212298A FR 2682534 B1 FR2682534 B1 FR 2682534B1
Authority
FR
France
Prior art keywords
stack
manufacturing
grid electrode
electrode sections
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9212298A
Other languages
English (en)
Other versions
FR2682534A1 (fr
Inventor
Taniguchi Akihisa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2682534A1 publication Critical patent/FR2682534A1/fr
Application granted granted Critical
Publication of FR2682534B1 publication Critical patent/FR2682534B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
    • H01L29/41783—Raised source or drain electrodes self aligned with the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR9212298A 1991-10-14 1992-10-14 Dispositif a semiconducteurs comportant un empilement de sections d'electrode de grille, et procede de fabrication de ce dispositif. Expired - Fee Related FR2682534B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3296354A JP2702338B2 (ja) 1991-10-14 1991-10-14 半導体装置、及びその製造方法

Publications (2)

Publication Number Publication Date
FR2682534A1 FR2682534A1 (fr) 1993-04-16
FR2682534B1 true FR2682534B1 (fr) 1994-10-07

Family

ID=17832467

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9212298A Expired - Fee Related FR2682534B1 (fr) 1991-10-14 1992-10-14 Dispositif a semiconducteurs comportant un empilement de sections d'electrode de grille, et procede de fabrication de ce dispositif.

Country Status (4)

Country Link
US (2) US5384479A (fr)
JP (1) JP2702338B2 (fr)
DE (1) DE4234528C2 (fr)
FR (1) FR2682534B1 (fr)

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JPH05152293A (ja) * 1991-04-30 1993-06-18 Sgs Thomson Microelectron Inc 段差付き壁相互接続体及びゲートの製造方法
KR100274555B1 (ko) * 1991-06-26 2000-12-15 윌리엄 비. 켐플러 절연 게이트 전계 효과 트랜지스터 구조물 및 이의 제조 방법
JP3221766B2 (ja) * 1993-04-23 2001-10-22 三菱電機株式会社 電界効果トランジスタの製造方法
KR960042942A (ko) * 1995-05-04 1996-12-21 빈센트 비.인그라시아 반도체 디바이스 형성 방법
KR100359795B1 (ko) * 1995-08-22 2003-01-14 엘지.필립스 엘시디 주식회사 액정표시장치및그제조방법
US5869378A (en) * 1996-04-26 1999-02-09 Advanced Micro Devices, Inc. Method of reducing overlap between gate electrode and LDD region
US5953626A (en) * 1996-06-05 1999-09-14 Advanced Micro Devices, Inc. Dissolvable dielectric method
US6376330B1 (en) 1996-06-05 2002-04-23 Advanced Micro Devices, Inc. Dielectric having an air gap formed between closely spaced interconnect lines
US5814555A (en) 1996-06-05 1998-09-29 Advanced Micro Devices, Inc. Interlevel dielectric with air gaps to lessen capacitive coupling
KR100207472B1 (ko) 1996-06-07 1999-07-15 윤종용 티타늄 질화막 적층 구조의 게이트 전극을 갖춘 반도체장치 및 그 제조 방법
US6605845B1 (en) * 1997-09-30 2003-08-12 Intel Corporation Asymmetric MOSFET using spacer gate technique
US5869379A (en) * 1997-12-08 1999-02-09 Advanced Micro Devices, Inc. Method of forming air gap spacer for high performance MOSFETS'
TW387151B (en) * 1998-02-07 2000-04-11 United Microelectronics Corp Field effect transistor structure of integrated circuit and the manufacturing method thereof
US6160316A (en) * 1998-03-04 2000-12-12 Advanced Micro Devices, Inc. Integrated circuit utilizing an air gap to reduce capacitance between adjacent metal linewidths
US6153477A (en) * 1998-04-14 2000-11-28 Advanced Micro Devices, Inc. Ultra short transistor channel length formed using a gate dielectric having a relatively high dielectric constant
US6180502B1 (en) * 1998-11-30 2001-01-30 Intel Corporation Self-aligned process for making asymmetric MOSFET using spacer gate technique
FR2791177A1 (fr) * 1999-03-19 2000-09-22 France Telecom Procede de realisation d'une grille en forme de champignon ou grille en "t"
US6251737B1 (en) * 1999-11-04 2001-06-26 United Microelectronics Corp. Method of increasing gate surface area for depositing silicide material
DE10114778A1 (de) * 2001-03-26 2002-10-17 Infineon Technologies Ag Verfahren zur Herstellung eines MOSFETs mit sehr kleiner Kanallänge
AU2002357640A1 (en) * 2001-07-24 2003-04-22 Cree, Inc. Insulting gate algan/gan hemt
KR100768500B1 (ko) * 2002-06-26 2007-10-19 세미이큅, 인코포레이티드 반도체 디바이스의 통합부로서 반도체 기판에 초박막접합을 형성하는 방법
US6740535B2 (en) * 2002-07-29 2004-05-25 International Business Machines Corporation Enhanced T-gate structure for modulation doped field effect transistors
US20080200020A1 (en) * 2003-06-18 2008-08-21 Semequip, Inc. Semiconductor device and method of fabricating a semiconductor device
JP2005209836A (ja) * 2004-01-22 2005-08-04 Toshiba Corp 半導体装置の製造方法
US7129181B2 (en) * 2004-09-17 2006-10-31 Palo Alto Research Center Incorporated Sub-resolution gaps generated by controlled over-etching
US7692263B2 (en) 2006-11-21 2010-04-06 Cree, Inc. High voltage GaN transistors
US8212290B2 (en) 2007-03-23 2012-07-03 Cree, Inc. High temperature performance capable gallium nitride transistor
US20090212332A1 (en) * 2008-02-21 2009-08-27 International Business Machines Corporation Field effect transistor with reduced overlap capacitance
JP5220549B2 (ja) * 2008-10-20 2013-06-26 本田技研工業株式会社 アウタロータ型多極発電機のステータ構造体
DE102011003090A1 (de) 2011-01-25 2012-07-26 Evonik Goldschmidt Gmbh Verwendung von Siliconmethacrylat-Partikeln in kosmetischen Formulierungen
US8541296B2 (en) * 2011-09-01 2013-09-24 The Institute of Microelectronics Chinese Academy of Science Method of manufacturing dummy gates in gate last process
DE102013226568A1 (de) 2013-12-19 2015-06-25 Evonik Industries Ag Silicon(meth-)acrylat-Partikel, Verfahren zu deren Herstellung sowie deren Verwendung
US9419083B2 (en) * 2014-11-21 2016-08-16 Raytheon Company Semiconductor structures having a gate field plate and methods for forming such structure
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JPH02226727A (ja) * 1989-02-28 1990-09-10 Oki Electric Ind Co Ltd Ｌｄｄ型ｍｏｓ半導体装置の製造方法
JP2695014B2 (ja) * 1989-09-06 1997-12-24 株式会社東芝 Ｍｏｓ型半導体装置
JP2786307B2 (ja) * 1990-04-19 1998-08-13 三菱電機株式会社 電界効果トランジスタ及びその製造方法

Also Published As

Publication number Publication date
US5384479A (en) 1995-01-24
DE4234528C2 (de) 1999-08-19
JPH05109761A (ja) 1993-04-30
DE4234528A1 (de) 1993-04-15
FR2682534A1 (fr) 1993-04-16
US5462884A (en) 1995-10-31
JP2702338B2 (ja) 1998-01-21

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