FR2667725B1 - Dispositif a semiconducteurs ayant un dissipateur de chaleur et procede pour sa fabrication. - Google Patents
Dispositif a semiconducteurs ayant un dissipateur de chaleur et procede pour sa fabrication.Info
- Publication number
- FR2667725B1 FR2667725B1 FR9112255A FR9112255A FR2667725B1 FR 2667725 B1 FR2667725 B1 FR 2667725B1 FR 9112255 A FR9112255 A FR 9112255A FR 9112255 A FR9112255 A FR 9112255A FR 2667725 B1 FR2667725 B1 FR 2667725B1
- Authority
- FR
- France
- Prior art keywords
- production
- semiconductor device
- heat dissipator
- dissipator
- heat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5389—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates the chips being integrally enclosed by the interconnect and support structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92142—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92144—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
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- H01L2924/01005—Boron [B]
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- H01L2924/01029—Copper [Cu]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01033—Arsenic [As]
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- H01L2924/01042—Molybdenum [Mo]
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- H01L2924/01052—Tellurium [Te]
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- H01L2924/01058—Cerium [Ce]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01072—Hafnium [Hf]
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- H01L2924/01074—Tungsten [W]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0495—5th Group
- H01L2924/04953—TaN
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18162—Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
- H01L2924/3511—Warping
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2268882A JP2505065B2 (ja) | 1990-10-04 | 1990-10-04 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2667725A1 FR2667725A1 (fr) | 1992-04-10 |
FR2667725B1 true FR2667725B1 (fr) | 1993-02-19 |
Family
ID=17464575
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9112255A Expired - Fee Related FR2667725B1 (fr) | 1990-10-04 | 1991-10-04 | Dispositif a semiconducteurs ayant un dissipateur de chaleur et procede pour sa fabrication. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5200641A (fr) |
JP (1) | JP2505065B2 (fr) |
DE (1) | DE4126766C2 (fr) |
FR (1) | FR2667725B1 (fr) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5297001A (en) * | 1992-10-08 | 1994-03-22 | Sundstrand Corporation | High power semiconductor assembly |
JPH06209058A (ja) * | 1993-01-12 | 1994-07-26 | Mitsubishi Electric Corp | 半導体装置及びその製造方法,並びにその実装方法 |
US5305186A (en) * | 1993-01-27 | 1994-04-19 | International Business Machines Corporation | Power carrier with selective thermal performance |
JPH06268112A (ja) * | 1993-03-10 | 1994-09-22 | Mitsubishi Electric Corp | 半導体装置、及びその製造方法 |
JP3810204B2 (ja) * | 1998-03-19 | 2006-08-16 | 三菱電機株式会社 | 半導体装置の製造方法および半導体装置 |
US6114048A (en) * | 1998-09-04 | 2000-09-05 | Brush Wellman, Inc. | Functionally graded metal substrates and process for making same |
US20040229443A1 (en) * | 1998-12-31 | 2004-11-18 | Bower Robert W. | Structures, materials and methods for fabrication of nanostructures by transposed split of ion cut materials |
US6586279B1 (en) * | 2000-11-17 | 2003-07-01 | Sun Microsystems, Inc. | Method of integrating a heat spreader and a semiconductor, and package formed thereby |
US6956250B2 (en) * | 2001-02-23 | 2005-10-18 | Nitronex Corporation | Gallium nitride materials including thermally conductive regions |
EP1595289A4 (fr) * | 2003-02-19 | 2009-04-15 | Honeywell Int Inc | Systemes d'interconnexion thermique, leurs procedes de production et leurs utilisations |
US20070262441A1 (en) * | 2006-05-09 | 2007-11-15 | Chi-Ming Chen | Heat sink structure for embedded chips and method for fabricating the same |
JP5744549B2 (ja) | 2011-02-02 | 2015-07-08 | キヤノン株式会社 | インクジェット記録ヘッドおよびインクジェット記録ヘッドの製造方法 |
US9960127B2 (en) | 2016-05-18 | 2018-05-01 | Macom Technology Solutions Holdings, Inc. | High-power amplifier package |
US10134658B2 (en) | 2016-08-10 | 2018-11-20 | Macom Technology Solutions Holdings, Inc. | High power transistors |
EP3595002A1 (fr) | 2018-07-12 | 2020-01-15 | Heraeus Deutschland GmbH & Co KG | Substrat métal-céramique pourvu d'un film formé pour un refroidissement direct comme côté inférieur du substrat |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3986196A (en) * | 1975-06-30 | 1976-10-12 | Varian Associates | Through-substrate source contact for microwave FET |
US4025997A (en) * | 1975-12-23 | 1977-05-31 | International Telephone & Telegraph Corporation | Ceramic mounting and heat sink device |
JPS6038867B2 (ja) * | 1981-06-05 | 1985-09-03 | 株式会社日立製作所 | 絶縁型半導体装置 |
JPS58135658A (ja) * | 1982-02-08 | 1983-08-12 | Hitachi Ltd | 半導体装置 |
FR2525815B1 (fr) * | 1982-04-27 | 1985-08-30 | Inf Milit Spatiale Aeronaut | Substrat composite a haute conduction thermique et application aux boitiers de dispositifs semi-conducteurs |
JPS5961052A (ja) * | 1982-09-29 | 1984-04-07 | Sanyo Electric Co Ltd | 半導体装置 |
JPS59135737A (ja) * | 1983-01-24 | 1984-08-04 | Mitsubishi Electric Corp | 半導体装置 |
FR2546878B1 (fr) * | 1983-05-31 | 1988-04-08 | Slonina Jean Pierre | Plaque support d'un substrat ceramique, leger, a forte conductivite thermique et coefficient de dilatation adapte pour toutes applications dans le domaine electronique |
FR2565030B1 (fr) * | 1984-05-25 | 1986-08-22 | Thomson Csf | Structure de metallisations de reprise de contacts d'un dispositif semi-conducteur et dispositif dote d'une telle structure |
JPS6123350A (ja) * | 1984-07-12 | 1986-01-31 | Nec Corp | 半導体装置 |
US4835598A (en) * | 1985-06-13 | 1989-05-30 | Matsushita Electric Works, Ltd. | Wiring board |
US4893174A (en) * | 1985-07-08 | 1990-01-09 | Hitachi, Ltd. | High density integration of semiconductor circuit |
JPS6380555A (ja) * | 1986-09-24 | 1988-04-11 | Nec Corp | 半導体装置 |
JPH0618242B2 (ja) * | 1986-11-25 | 1994-03-09 | 日本電気株式会社 | ハイブリツド集積回路 |
DE3718684A1 (de) * | 1987-06-04 | 1988-12-22 | Licentia Gmbh | Halbleiterkoerper |
EP0297512B1 (fr) * | 1987-06-30 | 1993-09-08 | Sumitomo Electric Industries, Ltd. | Elément porteur pour appareil semi-conducteur |
JPH0777265B2 (ja) * | 1987-10-22 | 1995-08-16 | 三菱電機株式会社 | 半導体装置の製造方法 |
JPH01120853A (ja) * | 1987-11-04 | 1989-05-12 | Mitsubishi Electric Corp | 半導体装置 |
JPH01257355A (ja) * | 1987-12-14 | 1989-10-13 | Mitsubishi Electric Corp | マイクロ波モノリシックic |
JPH01258448A (ja) * | 1988-04-08 | 1989-10-16 | Nec Corp | 半導体ペレット |
DE3813364A1 (de) * | 1988-04-21 | 1989-11-02 | Bodenseewerk Geraetetech | Vorrichtung zur waermeabfuhr von bauelementen auf einer leiterplatte |
US4941067A (en) * | 1989-04-07 | 1990-07-10 | Motorola Inc. | Thermal shunt for electronic circuits |
JPH03136338A (ja) * | 1989-10-23 | 1991-06-11 | Mitsubishi Electric Corp | 半導体装置およびその製造のためのロウ付け方法 |
US4994903A (en) * | 1989-12-18 | 1991-02-19 | Texas Instruments Incorporated | Circuit substrate and circuit using the substrate |
-
1990
- 1990-10-04 JP JP2268882A patent/JP2505065B2/ja not_active Expired - Lifetime
-
1991
- 1991-07-02 US US07/724,788 patent/US5200641A/en not_active Expired - Fee Related
- 1991-08-13 DE DE4126766A patent/DE4126766C2/de not_active Expired - Fee Related
- 1991-10-04 FR FR9112255A patent/FR2667725B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2505065B2 (ja) | 1996-06-05 |
JPH04144157A (ja) | 1992-05-18 |
US5200641A (en) | 1993-04-06 |
FR2667725A1 (fr) | 1992-04-10 |
DE4126766C2 (de) | 1995-10-05 |
DE4126766A1 (de) | 1992-04-09 |
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Legal Events
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D6 | Patent endorsed licences of rights | ||
ST | Notification of lapse |