FR2681475B1 - Dispositif a semiconducteurs comportant plusieurs electrodes de grille et procede de fabrication. - Google Patents
Dispositif a semiconducteurs comportant plusieurs electrodes de grille et procede de fabrication.Info
- Publication number
- FR2681475B1 FR2681475B1 FR9210806A FR9210806A FR2681475B1 FR 2681475 B1 FR2681475 B1 FR 2681475B1 FR 9210806 A FR9210806 A FR 9210806A FR 9210806 A FR9210806 A FR 9210806A FR 2681475 B1 FR2681475 B1 FR 2681475B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- semiconductor device
- grid electrodes
- multiple grid
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/11—Metal-organic CVD, ruehrwein type
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3263275A JPH0575139A (ja) | 1991-09-12 | 1991-09-12 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2681475A1 FR2681475A1 (fr) | 1993-03-19 |
FR2681475B1 true FR2681475B1 (fr) | 1993-12-24 |
Family
ID=17387202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9210806A Expired - Fee Related FR2681475B1 (fr) | 1991-09-12 | 1992-09-10 | Dispositif a semiconducteurs comportant plusieurs electrodes de grille et procede de fabrication. |
Country Status (4)
Country | Link |
---|---|
US (2) | US5270556A (fr) |
JP (1) | JPH0575139A (fr) |
FR (1) | FR2681475B1 (fr) |
GB (1) | GB2259806B (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06244216A (ja) * | 1992-12-21 | 1994-09-02 | Mitsubishi Electric Corp | Ipgトランジスタ及びその製造方法,並びに半導体集積回路装置及びその製造方法 |
JP3500541B2 (ja) * | 1994-02-15 | 2004-02-23 | 富士通株式会社 | 単電子トンネル接合装置の製造方法 |
KR0135024B1 (en) * | 1994-11-15 | 1998-04-20 | Korea Electronics Telecomm | Fabrication method of self-aligned t-gare gaas metal semiconductor field effect transistor |
JP3682920B2 (ja) * | 2001-10-30 | 2005-08-17 | 富士通株式会社 | 半導体装置の製造方法 |
US7045404B2 (en) * | 2004-01-16 | 2006-05-16 | Cree, Inc. | Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof |
KR101706732B1 (ko) * | 2015-12-30 | 2017-02-27 | 주식회사 엔디디 | 바이오 감지 장치 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1603260A (en) * | 1978-05-31 | 1981-11-25 | Secr Defence | Devices and their fabrication |
US4463366A (en) * | 1980-06-20 | 1984-07-31 | Nippon Telegraph & Telephone Public Corp. | Field effect transistor with combination Schottky-junction gate |
FR2501913A1 (fr) * | 1981-03-10 | 1982-09-17 | Thomson Csf | Transistor a effet de champ de type planar comportant des electrodes a puits metallises et procede de fabrication de ce transistor |
US4583107A (en) * | 1983-08-15 | 1986-04-15 | Westinghouse Electric Corp. | Castellated gate field effect transistor |
EP0225566A3 (fr) * | 1985-12-03 | 1989-07-26 | Itt Industries, Inc. | Transistor à grille perméable |
JP2609587B2 (ja) * | 1986-04-21 | 1997-05-14 | 株式会社日立製作所 | 半導体装置 |
JPS63232374A (ja) * | 1987-03-20 | 1988-09-28 | Fujitsu Ltd | 半導体装置 |
JPH0225041A (ja) * | 1988-07-13 | 1990-01-26 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH0239440A (ja) * | 1988-07-28 | 1990-02-08 | Fujitsu Ltd | 高速度トランジスタ |
US5023671A (en) * | 1989-03-27 | 1991-06-11 | International Business Machines Corporation | Microstructures which provide superlattice effects and one-dimensional carrier gas channels |
JPH02296372A (ja) * | 1989-05-10 | 1990-12-06 | Mitsubishi Electric Corp | 透過ベーストランジスタ |
JPH0355852A (ja) * | 1989-07-25 | 1991-03-11 | Sony Corp | 半導体装置の製造方法 |
US5019877A (en) * | 1989-08-31 | 1991-05-28 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor |
US5053348A (en) * | 1989-12-01 | 1991-10-01 | Hughes Aircraft Company | Fabrication of self-aligned, t-gate hemt |
JPH04307755A (ja) * | 1991-04-04 | 1992-10-29 | Oki Electric Ind Co Ltd | 電界効果トランジスタ及びその製造方法 |
JPH0536725A (ja) * | 1991-07-31 | 1993-02-12 | Sony Corp | 電界効果トランジスタの製造方法 |
-
1991
- 1991-09-12 JP JP3263275A patent/JPH0575139A/ja active Pending
-
1992
- 1992-07-28 GB GB9216062A patent/GB2259806B/en not_active Expired - Fee Related
- 1992-07-30 US US07/921,572 patent/US5270556A/en not_active Expired - Fee Related
- 1992-09-10 FR FR9210806A patent/FR2681475B1/fr not_active Expired - Fee Related
-
1993
- 1993-07-20 US US08/093,862 patent/US5369044A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB2259806B (en) | 1995-05-31 |
JPH0575139A (ja) | 1993-03-26 |
GB2259806A (en) | 1993-03-24 |
US5369044A (en) | 1994-11-29 |
US5270556A (en) | 1993-12-14 |
FR2681475A1 (fr) | 1993-03-19 |
GB9216062D0 (en) | 1992-09-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
D6 | Patent endorsed licences of rights | ||
ST | Notification of lapse |