FR2744566B1 - Dispositif a semiconducteurs comprenant deux dispositifs elementaires, et procede de fabrication - Google Patents

Dispositif a semiconducteurs comprenant deux dispositifs elementaires, et procede de fabrication

Info

Publication number
FR2744566B1
FR2744566B1 FR9615210A FR9615210A FR2744566B1 FR 2744566 B1 FR2744566 B1 FR 2744566B1 FR 9615210 A FR9615210 A FR 9615210A FR 9615210 A FR9615210 A FR 9615210A FR 2744566 B1 FR2744566 B1 FR 2744566B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
elementary devices
elementary
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9615210A
Other languages
English (en)
Other versions
FR2744566A1 (fr
Inventor
Hajime Akiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2744566A1 publication Critical patent/FR2744566A1/fr
Application granted granted Critical
Publication of FR2744566B1 publication Critical patent/FR2744566B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
FR9615210A 1996-02-02 1996-12-11 Dispositif a semiconducteurs comprenant deux dispositifs elementaires, et procede de fabrication Expired - Fee Related FR2744566B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP01761296A JP3378135B2 (ja) 1996-02-02 1996-02-02 半導体装置とその製造方法

Publications (2)

Publication Number Publication Date
FR2744566A1 FR2744566A1 (fr) 1997-08-08
FR2744566B1 true FR2744566B1 (fr) 1999-05-21

Family

ID=11948713

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9615210A Expired - Fee Related FR2744566B1 (fr) 1996-02-02 1996-12-11 Dispositif a semiconducteurs comprenant deux dispositifs elementaires, et procede de fabrication

Country Status (4)

Country Link
US (1) US6037634A (fr)
JP (1) JP3378135B2 (fr)
DE (1) DE19653219B4 (fr)
FR (1) FR2744566B1 (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3111947B2 (ja) * 1997-10-28 2000-11-27 日本電気株式会社 半導体装置、その製造方法
JP2000307112A (ja) * 1999-04-26 2000-11-02 Mitsubishi Electric Corp 半導体装置及びその製造方法
US6541863B1 (en) * 2000-01-05 2003-04-01 Advanced Micro Devices, Inc. Semiconductor device having a reduced signal processing time and a method of fabricating the same
JP4471480B2 (ja) * 2000-10-18 2010-06-02 三菱電機株式会社 半導体装置
JP3764343B2 (ja) * 2001-02-28 2006-04-05 株式会社東芝 半導体装置の製造方法
US20030134486A1 (en) * 2002-01-16 2003-07-17 Zhongze Wang Semiconductor-on-insulator comprising integrated circuitry
EP1420450A3 (fr) * 2002-11-15 2006-12-13 Matsushita Electric Industrial Co., Ltd. Circuit semi-conducteur différentiel avec des transistors à masse virtuelle
JP2005175151A (ja) * 2003-12-10 2005-06-30 Fuji Electric Holdings Co Ltd Ｓｏｉウェハとその製造方法およびそのｓｏｉウェハを用いた半導体装置の製造方法
JP4683865B2 (ja) * 2004-06-15 2011-05-18 富士通セミコンダクター株式会社 半導体基板の製造方法
US7244659B2 (en) * 2005-03-10 2007-07-17 Micron Technology, Inc. Integrated circuits and methods of forming a field effect transistor
JP4947914B2 (ja) * 2005-04-06 2012-06-06 ラピスセミコンダクタ株式会社 半導体装置およびその製造方法
US7557002B2 (en) 2006-08-18 2009-07-07 Micron Technology, Inc. Methods of forming transistor devices
US7989322B2 (en) 2007-02-07 2011-08-02 Micron Technology, Inc. Methods of forming transistors
US9257328B2 (en) * 2008-11-26 2016-02-09 Corning Incorporated Glass-ceramic-based semiconductor-on-insulator structures and method for making the same
DE102010038933A1 (de) * 2009-08-18 2011-02-24 Denso Corporation, Kariya-City Halbleitervorrichtung mit Halbleiterchip und Metallplatte und Verfahren zu deren Fertigung
CN102412356B (zh) * 2010-09-23 2015-05-13 展晶科技(深圳)有限公司 外延基板
CN103109350A (zh) * 2010-09-30 2013-05-15 飞思卡尔半导体公司 处理半导体晶片的方法、半导体晶片以及半导体器件
JP6589277B2 (ja) 2015-01-14 2019-10-16 富士電機株式会社 高耐圧受動素子および高耐圧受動素子の製造方法
US10796942B2 (en) * 2018-08-20 2020-10-06 Stmicroelectronics S.R.L. Semiconductor structure with partially embedded insulation region

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57170539A (en) * 1981-04-13 1982-10-20 Fujitsu Ltd Manufacture of semiconductor device
JPS62203364A (ja) * 1986-03-03 1987-09-08 Nec Corp 半導体装置の製造方法
JP2685819B2 (ja) * 1988-03-31 1997-12-03 株式会社東芝 誘電体分離半導体基板とその製造方法
JP2763107B2 (ja) * 1988-05-30 1998-06-11 株式会社東芝 誘電体分離半導体基板およびその製造方法
JP2787921B2 (ja) * 1989-01-06 1998-08-20 三菱電機株式会社 絶縁ゲート型バイポーラトランジスタ
JPH0824100B2 (ja) * 1989-07-19 1996-03-06 富士通株式会社 Ｓｏｉ基板の製造方法
JPH0355822A (ja) * 1989-07-25 1991-03-11 Shin Etsu Handotai Co Ltd 半導体素子形成用基板の製造方法
US5182626A (en) * 1989-09-20 1993-01-26 Mitsubishi Denki Kabushiki Kaisha Insulated gate bipolar transistor and method of manufacturing the same
US5362667A (en) * 1992-07-28 1994-11-08 Harris Corporation Bonded wafer processing
JPH04266047A (ja) * 1991-02-20 1992-09-22 Fujitsu Ltd 埋め込み層形成に相当するｓｏｉ型半導体装置の製造方法及び半導体装置
EP0547677A3 (en) * 1991-12-17 1996-10-16 Philips Nv Use of vapor-phase etching in fabrication of semiconductor-on-insulator structure
JP3237888B2 (ja) * 1992-01-31 2001-12-10 キヤノン株式会社 半導体基体及びその作製方法
JPH05217824A (ja) * 1992-01-31 1993-08-27 Canon Inc 半導体ウエハ及びその製造方法
DE69332407T2 (de) * 1992-06-17 2003-06-18 Harris Corp Herstellung von Halbleiteranordnungen auf SOI substraten
JP2786081B2 (ja) * 1993-07-27 1998-08-13 日本電気株式会社 Ｓｏｉ基板
JP3033412B2 (ja) * 1993-11-26 2000-04-17 株式会社デンソー 半導体装置の製造方法

Also Published As

Publication number Publication date
JPH09213788A (ja) 1997-08-15
FR2744566A1 (fr) 1997-08-08
US6037634A (en) 2000-03-14
JP3378135B2 (ja) 2003-02-17
DE19653219B4 (de) 2007-05-03
DE19653219A1 (de) 1997-08-07

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Effective date: 20130830