JPS57149777A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57149777A JPS57149777A JP3589281A JP3589281A JPS57149777A JP S57149777 A JPS57149777 A JP S57149777A JP 3589281 A JP3589281 A JP 3589281A JP 3589281 A JP3589281 A JP 3589281A JP S57149777 A JPS57149777 A JP S57149777A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- source
- type
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 abstract 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract 2
- 229910021340 platinum monosilicide Inorganic materials 0.000 abstract 2
- 229910001260 Pt alloy Inorganic materials 0.000 abstract 1
- JOXCDOKKASTCHR-UHFFFAOYSA-N [Si](O)(O)(O)O.[P] Chemical compound [Si](O)(O)(O)O.[P] JOXCDOKKASTCHR-UHFFFAOYSA-N 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Abstract
PURPOSE:To obtain low-resistance ohmic contact even if source and drain regions are formed by using an Al gate electrode as a mask by a method wherein platinum alloy films are formed on the surfaces of the source and drain regions. CONSTITUTION:A gate insulating film 13 and an Al gate electrode 14 are formed on a p type Si substrate 11 formed a field insulating film 12. Next, an n type impurity is injected in the substrate 11 by using the electrode 14 as a mask to form an n<+> type source region 15 and an n<+> type drain region 16. Next, Pt is coated on the whole surface of the substrate 11 to form a Pt film 17. Next, annealing is performed at a temperature of about 500 deg.C. In this way, PtSi films 18 are formed on the surfaces of the regions 15, 16. Next, the removal of etching is applied to the film 17 which has not become the PtSi film. After that, the formation of a phosphorus silicic acid glass film 19, source electrode 20, drain electrode 21, etc. is done. In this way, good p-n junction can be obtained and good contact of the electrodes 20, 21 can also be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3589281A JPS57149777A (en) | 1981-03-12 | 1981-03-12 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3589281A JPS57149777A (en) | 1981-03-12 | 1981-03-12 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57149777A true JPS57149777A (en) | 1982-09-16 |
Family
ID=12454671
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3589281A Pending JPS57149777A (en) | 1981-03-12 | 1981-03-12 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57149777A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5384479A (en) * | 1991-10-14 | 1995-01-24 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with T-shaped gate electrode |
-
1981
- 1981-03-12 JP JP3589281A patent/JPS57149777A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5384479A (en) * | 1991-10-14 | 1995-01-24 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor with T-shaped gate electrode |
| US5462884A (en) * | 1991-10-14 | 1995-10-31 | Mitsubishi Denki Kabushiki Kaisha | Method of making field effect transistor with T-shaped gate electrode |
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