FR2640079B1 - Methode fabrication d'un transistor auto-aligne a semi-conducteur metallique (gaas) a effet de champ pourvu d'une grille en tungstene du type t - Google Patents

Methode fabrication d'un transistor auto-aligne a semi-conducteur metallique (gaas) a effet de champ pourvu d'une grille en tungstene du type t

Info

Publication number
FR2640079B1
FR2640079B1 FR8915925A FR8915925A FR2640079B1 FR 2640079 B1 FR2640079 B1 FR 2640079B1 FR 8915925 A FR8915925 A FR 8915925A FR 8915925 A FR8915925 A FR 8915925A FR 2640079 B1 FR2640079 B1 FR 2640079B1
Authority
FR
France
Prior art keywords
gaas
transistor
self
manufacturing
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8915925A
Other languages
English (en)
Other versions
FR2640079A1 (fr
Inventor
Hyung Moo Park
Dong Goo Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electronics and Telecommunications Research Institute ETRI
KT Corp
Original Assignee
Electronics and Telecommunications Research Institute ETRI
KT Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electronics and Telecommunications Research Institute ETRI, KT Corp filed Critical Electronics and Telecommunications Research Institute ETRI
Publication of FR2640079A1 publication Critical patent/FR2640079A1/fr
Application granted granted Critical
Publication of FR2640079B1 publication Critical patent/FR2640079B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H01L29/66878—Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28581—Deposition of Schottky electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
FR8915925A 1988-12-01 1989-12-01 Methode fabrication d'un transistor auto-aligne a semi-conducteur metallique (gaas) a effet de champ pourvu d'une grille en tungstene du type t Expired - Fee Related FR2640079B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880015986A KR910006702B1 (ko) 1988-12-01 1988-12-01 T형 게이트 형상을 가진 자기 정합 mesfet의 제조방법

Publications (2)

Publication Number Publication Date
FR2640079A1 FR2640079A1 (fr) 1990-06-08
FR2640079B1 true FR2640079B1 (fr) 1995-11-10

Family

ID=19279818

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8915925A Expired - Fee Related FR2640079B1 (fr) 1988-12-01 1989-12-01 Methode fabrication d'un transistor auto-aligne a semi-conducteur metallique (gaas) a effet de champ pourvu d'une grille en tungstene du type t

Country Status (5)

Country Link
US (1) US4929567A (fr)
JP (1) JPH0620081B2 (fr)
KR (1) KR910006702B1 (fr)
DE (1) DE3939635A1 (fr)
FR (1) FR2640079B1 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5187111A (en) * 1985-09-27 1993-02-16 Kabushiki Kaisha Toshiba Method of manufacturing Schottky barrier gate FET
US5139968A (en) * 1989-03-03 1992-08-18 Mitsubishi Denki Kabushiki Kaisha Method of producing a t-shaped gate electrode
JPH04130619A (ja) * 1990-09-20 1992-05-01 Mitsubishi Electric Corp 半導体装置の製造方法
US5241203A (en) * 1991-07-10 1993-08-31 International Business Machines Corporation Inverse T-gate FET transistor with lightly doped source and drain region
KR940007668B1 (ko) * 1991-12-26 1994-08-22 재단법인 한국전자통신연구소 갈륨비소 금속반도체 전계효과 트랜지스터의 제조방법
KR0130963B1 (ko) * 1992-06-09 1998-04-14 구자홍 T형 단면구조의 게이트 금속전극을 갖는 전계효과 트랜지스터의 제조방법
US6159781A (en) * 1998-10-01 2000-12-12 Chartered Semiconductor Manufacturing, Ltd. Way to fabricate the self-aligned T-shape gate to reduce gate resistivity
GB2359193B (en) * 1998-12-07 2003-11-12 Intel Corp Transistor with notched gate
KR100296126B1 (ko) 1998-12-22 2001-08-07 박종섭 고집적 메모리 소자의 게이트전극 형성방법
KR100299386B1 (ko) 1998-12-28 2001-11-02 박종섭 반도체 소자의 게이트 전극 형성방법
JP3988342B2 (ja) 1998-12-29 2007-10-10 株式会社ハイニックスセミコンダクター 半導体素子のゲート電極形成方法
US6797586B2 (en) * 2001-06-28 2004-09-28 Koninklijke Philips Electronics N.V. Silicon carbide schottky barrier diode and method of making
US8105889B2 (en) * 2009-07-27 2012-01-31 Cree, Inc. Methods of fabricating transistors including self-aligned gate electrodes and source/drain regions
KR101140285B1 (ko) * 2010-01-29 2012-04-27 서울대학교산학협력단 멀티 스텝형 티 게이트 제조방법
US8736276B2 (en) * 2011-06-20 2014-05-27 General Electric Company Ripple spring and diagnostic method therefor
KR102173638B1 (ko) 2014-10-01 2020-11-04 삼성전자주식회사 반도체 소자 및 그 형성방법
KR102097714B1 (ko) 2019-11-05 2020-04-06 곽성근 맥섬석 과립을 이용한 원적외선과 음이온 방사 실리콘 고무 조성물 및 그 제조 방법

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4532695A (en) * 1982-07-02 1985-08-06 The United States Of America As Represented By The Secretary Of The Air Force Method of making self-aligned IGFET
JPS59161876A (ja) * 1983-03-04 1984-09-12 Nec Corp 化合物半導体装置の製造方法
US4601094A (en) * 1984-04-27 1986-07-22 The Warner & Swasey Company Turning machine with an automatic tool changer
JPS61166080A (ja) * 1984-12-28 1986-07-26 Fujitsu Ltd 電界効果トランジスタ及びその製造方法
US4615766A (en) * 1985-02-27 1986-10-07 International Business Machines Corporation Silicon cap for annealing gallium arsenide
US4712291A (en) * 1985-06-06 1987-12-15 The United States Of America As Represented By The Secretary Of The Air Force Process of fabricating TiW/Si self-aligned gate for GaAs MESFETs
JPS62114276A (ja) * 1985-11-14 1987-05-26 Oki Electric Ind Co Ltd 半導体素子の製造方法
US4735913A (en) * 1986-05-06 1988-04-05 Bell Communications Research, Inc. Self-aligned fabrication process for GaAs MESFET devices
EP0252179B1 (fr) * 1986-07-11 1992-05-27 International Business Machines Corporation Procédé de formation d'un profil de masque sous-attaqué
US4859618A (en) * 1986-11-20 1989-08-22 Sumitomo Electric Industries, Ltd. Method of producing the gate electrode of a field effect transistor
JPH07118482B2 (ja) * 1987-02-20 1995-12-18 シャープ株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
KR900011038A (ko) 1990-07-11
JPH0620081B2 (ja) 1994-03-16
JPH02192127A (ja) 1990-07-27
US4929567A (en) 1990-05-29
DE3939635A1 (de) 1990-06-07
KR910006702B1 (ko) 1991-08-31
DE3939635C2 (fr) 1993-09-23
FR2640079A1 (fr) 1990-06-08

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Effective date: 20111223