FR2656466B1 - Circuit integre a semiconducteurs composes ayant une region implantee. - Google Patents

Circuit integre a semiconducteurs composes ayant une region implantee.

Info

Publication number
FR2656466B1
FR2656466B1 FR9016006A FR9016006A FR2656466B1 FR 2656466 B1 FR2656466 B1 FR 2656466B1 FR 9016006 A FR9016006 A FR 9016006A FR 9016006 A FR9016006 A FR 9016006A FR 2656466 B1 FR2656466 B1 FR 2656466B1
Authority
FR
France
Prior art keywords
integrated circuit
compound semiconductors
implanted region
implanted
semiconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9016006A
Other languages
English (en)
Other versions
FR2656466A1 (fr
Inventor
Kazuhiko Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2656466A1 publication Critical patent/FR2656466A1/fr
Application granted granted Critical
Publication of FR2656466B1 publication Critical patent/FR2656466B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/7605—Making of isolation regions between components between components manufactured in an active substrate comprising AIII BV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Memories (AREA)
FR9016006A 1989-12-25 1990-12-20 Circuit integre a semiconducteurs composes ayant une region implantee. Expired - Fee Related FR2656466B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1337844A JP2553723B2 (ja) 1989-12-25 1989-12-25 化合物半導体集積回路装置

Publications (2)

Publication Number Publication Date
FR2656466A1 FR2656466A1 (fr) 1991-06-28
FR2656466B1 true FR2656466B1 (fr) 1993-02-19

Family

ID=18312505

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9016006A Expired - Fee Related FR2656466B1 (fr) 1989-12-25 1990-12-20 Circuit integre a semiconducteurs composes ayant une region implantee.

Country Status (4)

Country Link
US (1) US5166768A (fr)
JP (1) JP2553723B2 (fr)
FR (1) FR2656466B1 (fr)
GB (1) GB2239560B (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3015717B2 (ja) * 1994-09-14 2000-03-06 三洋電機株式会社 半導体装置の製造方法および半導体装置
US20010048147A1 (en) * 1995-09-14 2001-12-06 Hideki Mizuhara Semiconductor devices passivation film
US6268657B1 (en) * 1995-09-14 2001-07-31 Sanyo Electric Co., Ltd. Semiconductor devices and an insulating layer with an impurity
US6825132B1 (en) 1996-02-29 2004-11-30 Sanyo Electric Co., Ltd. Manufacturing method of semiconductor device including an insulation film on a conductive layer
JPH09260405A (ja) * 1996-03-27 1997-10-03 Mitsubishi Electric Corp 半導体装置とその製造方法
KR100383498B1 (ko) 1996-08-30 2003-08-19 산요 덴키 가부시키가이샤 반도체 장치 제조방법
US6288438B1 (en) 1996-09-06 2001-09-11 Sanyo Electric Co., Ltd. Semiconductor device including insulation film and fabrication method thereof
US5880515A (en) 1996-09-30 1999-03-09 Lsi Logic Corporation Circuit isolation utilizing MeV implantation
JP2975934B2 (ja) 1997-09-26 1999-11-10 三洋電機株式会社 半導体装置の製造方法及び半導体装置
US6690084B1 (en) 1997-09-26 2004-02-10 Sanyo Electric Co., Ltd. Semiconductor device including insulation film and fabrication method thereof
JPH11214800A (ja) * 1998-01-28 1999-08-06 Sony Corp 半導体装置およびその製造方法
US6794283B2 (en) 1998-05-29 2004-09-21 Sanyo Electric Co., Ltd. Semiconductor device and fabrication method thereof
US6281555B1 (en) * 1998-11-06 2001-08-28 Advanced Micro Devices, Inc. Integrated circuit having isolation structures
US6455903B1 (en) 2000-01-26 2002-09-24 Advanced Micro Devices, Inc. Dual threshold voltage MOSFET by local confinement of channel depletion layer using inert ion implantation
US6917110B2 (en) * 2001-12-07 2005-07-12 Sanyo Electric Co., Ltd. Semiconductor device comprising an interconnect structure with a modified low dielectric insulation layer
US7220983B2 (en) * 2004-12-09 2007-05-22 Macronix International Co., Ltd. Self-aligned small contact phase-change memory method and device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4472874A (en) * 1981-06-10 1984-09-25 Tokyo Shibaura Denki Kabushiki Kaisha Method of forming planar isolation regions having field inversion regions
JPS5955073A (ja) * 1982-09-24 1984-03-29 Fujitsu Ltd 半導体装置
JPS59168677A (ja) * 1983-03-14 1984-09-22 Fujitsu Ltd 半導体装置及びその製造方法
JPS61147571A (ja) * 1984-12-21 1986-07-05 Toshiba Corp ヘテロ接合バイポ−ラトランジスタの製造方法
DE3650638T2 (de) * 1985-03-22 1998-02-12 Nippon Electric Co Integrierte Halbleiterschaltung mit Isolationszone
JPH0614536B2 (ja) * 1985-09-17 1994-02-23 株式会社東芝 バイポ−ラ集積回路
JPS62274669A (ja) * 1986-05-22 1987-11-28 Nec Corp ガリウム砒素電界効果形半導体装置
JPS63129656A (ja) * 1986-11-20 1988-06-02 Fujitsu Ltd 半導体集積回路装置
JPS63170938A (ja) * 1987-01-09 1988-07-14 Toshiba Corp 化合物半導体装置の製造方法
JPS63308934A (ja) * 1987-06-11 1988-12-16 Nec Corp 化合物半導体装置の製法
JPS6446950A (en) * 1987-08-17 1989-02-21 Nec Corp Compound semiconductor device
US4956683A (en) * 1988-03-14 1990-09-11 Polaroid Corporation Isolation of p-n junctions
JPH01302742A (ja) * 1988-05-30 1989-12-06 Fujitsu Ltd 化合物半導体装置およびその製造方法
US5041393A (en) * 1988-12-28 1991-08-20 At&T Bell Laboratories Fabrication of GaAs integrated circuits

Also Published As

Publication number Publication date
GB2239560B (en) 1993-10-13
FR2656466A1 (fr) 1991-06-28
JP2553723B2 (ja) 1996-11-13
JPH03196546A (ja) 1991-08-28
GB9027440D0 (en) 1991-02-06
US5166768A (en) 1992-11-24
GB2239560A (en) 1991-07-03

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Legal Events

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D6 Patent endorsed licences of rights
ST Notification of lapse