FR2451107A1 - Dispositif de conversion photo-electrique, applicable aux systemes video - Google Patents

Dispositif de conversion photo-electrique, applicable aux systemes video

Info

Publication number
FR2451107A1
FR2451107A1 FR8005348A FR8005348A FR2451107A1 FR 2451107 A1 FR2451107 A1 FR 2451107A1 FR 8005348 A FR8005348 A FR 8005348A FR 8005348 A FR8005348 A FR 8005348A FR 2451107 A1 FR2451107 A1 FR 2451107A1
Authority
FR
France
Prior art keywords
conversion device
photoelectric conversion
video systems
device applicable
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8005348A
Other languages
English (en)
Other versions
FR2451107B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Broadcasting Corp
Original Assignee
Nippon Hoso Kyokai NHK
Japan Broadcasting Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Hoso Kyokai NHK, Japan Broadcasting Corp filed Critical Nippon Hoso Kyokai NHK
Publication of FR2451107A1 publication Critical patent/FR2451107A1/fr
Application granted granted Critical
Publication of FR2451107B1 publication Critical patent/FR2451107B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14681—Bipolar transistor imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

LE DISPOSITIF DE CONVERSION PHOTO-ELECTRIQUE DE NATURE SEMI-CONDUCTRICE, SELON L'INVENTION, EST CONSTITUE DE COUCHES DE CONVERSION PHOTO-ELECTRIQUE 5, 18 ET D'UN AMPLIFICATEUR SEMI-CONDUCTEUR, CONSTITUE PAR EXEMPLE PAR UN TRANSISTOR A EFFET DE CHAMP 12, 13, 14, UNE ELECTRODE CONDUCTRICE 17 ETANT INTERPOSEE ENTRE CES ELEMENTS POUR COLLECTER DES CHARGES DE SIGNAL ENGENDREES DANS LES COUCHES DE CONVERSION, EN VUE D'OBTENIR AINSI UNE EXCELLENTE SENSIBILITE SPECTRALE ET UN TRES BON RENDEMENT DE CONVERSION; UN AGENCEMENT DE DISPOSITIF DE CONVERSION DE CE GENRE SOUS FORME D'UNE MATRICE PERMET DE REALISER UN APPAREIL VIDEO EFFICACE. APPLICATION AU DOMAINE DE LA TELEVISION.
FR8005348A 1979-03-08 1980-03-10 Dispositif de conversion photo-electrique, applicable aux systemes video Expired FR2451107B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54027151A JPS5850030B2 (ja) 1979-03-08 1979-03-08 光電変換装置およびそれを用いた固体撮像板

Publications (2)

Publication Number Publication Date
FR2451107A1 true FR2451107A1 (fr) 1980-10-03
FR2451107B1 FR2451107B1 (fr) 1985-12-13

Family

ID=12213038

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8005348A Expired FR2451107B1 (fr) 1979-03-08 1980-03-10 Dispositif de conversion photo-electrique, applicable aux systemes video

Country Status (5)

Country Link
US (1) US4363963A (fr)
JP (1) JPS5850030B2 (fr)
DE (1) DE3008858C2 (fr)
FR (1) FR2451107B1 (fr)
GB (1) GB2044996B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4394749A (en) * 1979-06-08 1983-07-19 Hitachi, Ltd. Photoelectric device and method of producing the same

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DE3101504A1 (de) * 1981-01-19 1982-08-26 Siemens AG, 1000 Berlin und 8000 München Roentgendiagnostikeinrichtung mit einer roentgenstrahlenempfindlichen fernsehaufnahmeeinrichtung
US4388525A (en) * 1981-02-11 1983-06-14 Fairchild Camera & Instrument Corp. Precision optical spacers for image sensor filters
JPS5813079A (ja) * 1981-07-16 1983-01-25 Olympus Optical Co Ltd イメ−ジセンサ
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DE3138240A1 (de) * 1981-09-25 1983-04-07 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor mit steuerung oder regelung der integrationszeit
JPS5856363A (ja) * 1981-09-30 1983-04-04 Hitachi Ltd 受光素子
JPS5861663A (ja) * 1981-10-08 1983-04-12 Matsushita Electronics Corp 固体撮像装置の製造方法
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DE3236146A1 (de) * 1982-09-29 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Zweidimensionaler halbleiter-bildsensor und verfahren zu seinem betrieb
JPS59108464A (ja) * 1982-12-14 1984-06-22 Olympus Optical Co Ltd 固体撮像装置
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US4633092A (en) * 1984-11-13 1986-12-30 Eastman Kodak Company Light sensing device
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JPS61124171A (ja) * 1984-11-20 1986-06-11 Seiko Instr & Electronics Ltd 半導体装置
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FR2580133B1 (fr) * 1985-04-05 1988-06-24 Thomson Csf
JP2600069B2 (ja) * 1985-09-14 1997-04-16 工業技術院長 光センサ
WO1987003388A1 (fr) * 1985-11-26 1987-06-04 Jabali Pty Ltd., Imageur photo-electrique
DE3544182A1 (de) * 1985-12-13 1987-06-19 Heimann Gmbh Kontaktbildsensorzeile
DE3544121A1 (de) * 1985-12-13 1987-06-19 Heimann Gmbh Kontaktbildsensorzeile
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EP0246481B1 (fr) * 1986-05-13 1990-12-27 Heimann GmbH Rangée de capteurs d'image à contact
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JPH0812905B2 (ja) * 1986-07-11 1996-02-07 キヤノン株式会社 光電変換装置及びその製造方法
JPH0644619B2 (ja) * 1986-07-17 1994-06-08 キヤノン株式会社 光電変換装置
JPS63100879A (ja) * 1986-10-17 1988-05-02 Hitachi Ltd 固体撮像装置
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CN103650476B (zh) 2011-05-12 2018-05-01 德普伊辛迪斯制品公司 对具有最小纵向互连的混合图像传感器使用堆叠方案的像素阵列区域最优化
CN103703760B (zh) 2011-08-04 2017-08-25 松下知识产权经营株式会社 固体摄像装置以及开关电路
CN104412574B (zh) 2012-06-27 2017-12-12 松下知识产权经营株式会社 固体摄像装置
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CN104813653B (zh) 2012-11-27 2018-09-14 松下知识产权经营株式会社 固体摄像装置及其驱动方法
JP6175651B2 (ja) 2012-12-05 2017-08-09 パナソニックＩｐマネジメント株式会社 固体撮像装置
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CN105263393B (zh) 2013-03-15 2018-10-26 德普伊新特斯产品公司 与成角度的内窥镜一起使用的带有整合式棱镜的观察套管针
EP2967300A4 (fr) 2013-03-15 2016-11-23 Olive Medical Corp Commande d'énergie lumineuse intégrale d'impulsion laser
CN114191114A (zh) 2014-03-21 2022-03-18 德普伊新特斯产品公司 用于成像传感器的卡缘连接器
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Also Published As

Publication number Publication date
JPS55120182A (en) 1980-09-16
FR2451107B1 (fr) 1985-12-13
US4363963A (en) 1982-12-14
DE3008858C2 (de) 1994-02-10
JPS5850030B2 (ja) 1983-11-08
GB2044996B (en) 1983-08-03
GB2044996A (en) 1980-10-22
DE3008858A1 (de) 1980-09-11

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