FR2379877A1 - Dispositif semi-conducteur de memoire - Google Patents
Dispositif semi-conducteur de memoireInfo
- Publication number
- FR2379877A1 FR2379877A1 FR7803218A FR7803218A FR2379877A1 FR 2379877 A1 FR2379877 A1 FR 2379877A1 FR 7803218 A FR7803218 A FR 7803218A FR 7803218 A FR7803218 A FR 7803218A FR 2379877 A1 FR2379877 A1 FR 2379877A1
- Authority
- FR
- France
- Prior art keywords
- effect transistor
- field effect
- memory device
- semiconductor memory
- information
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 230000005669 field effect Effects 0.000 abstract 4
- 230000001066 destructive effect Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7841—Field effect transistors with field effect produced by an insulated gate with floating body, e.g. programmable transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Abstract
L'invention concerne une mémoire à transistor à effet de champ à jonction, dans laquelle l'information peut être emmagasinée sur les électrodes portes desdits transistors et être lue de façon non destructive. Chaque transistor contient une structure de transistor à effet de champ à porte isolée dont la porte est couplée à l'amenée ou l'évacuation du transistor à effet de champ à jonction. L'information peut être rafraîchie périodiquement au niveau des éléments à l'aide de ce transistor à effet de champ à porte isolée (sans amplificateur extérieur). Application : mémoire à accessibilité universelle.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7701172A NL7701172A (nl) | 1977-02-04 | 1977-02-04 | Halfgeleidergeheugeninrichting. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2379877A1 true FR2379877A1 (fr) | 1978-09-01 |
FR2379877B1 FR2379877B1 (fr) | 1986-02-14 |
Family
ID=19827917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7803218A Expired FR2379877B1 (fr) | 1977-02-04 | 1978-02-06 | Dispositif semi-conducteur de memoire |
Country Status (14)
Country | Link |
---|---|
US (1) | US4161741A (fr) |
JP (1) | JPS5846064B2 (fr) |
AU (1) | AU512104B2 (fr) |
BE (1) | BE863591A (fr) |
BR (1) | BR7800627A (fr) |
DD (1) | DD137161A5 (fr) |
DE (1) | DE2804412C3 (fr) |
ES (1) | ES466564A1 (fr) |
FR (1) | FR2379877B1 (fr) |
GB (1) | GB1594562A (fr) |
IT (1) | IT1092499B (fr) |
NL (1) | NL7701172A (fr) |
RO (1) | RO76120A (fr) |
SE (1) | SE7801169L (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0007910A1 (fr) * | 1978-01-03 | 1980-02-06 | ERB, Darrell, M. | Memoire de charge stratifiee |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1602361A (en) * | 1977-02-21 | 1981-11-11 | Zaidan Hojin Handotai Kenkyu | Semiconductor memory devices |
JPS6037620B2 (ja) * | 1979-12-11 | 1985-08-27 | 株式会社東芝 | 半導体記憶装置 |
US4335450A (en) * | 1980-01-30 | 1982-06-15 | International Business Machines Corporation | Non-destructive read out field effect transistor memory cell system |
CA1164562A (fr) * | 1980-10-08 | 1984-03-27 | Manabu Itsumi | Memoire a semiconducteur |
US4593453A (en) * | 1982-06-01 | 1986-06-10 | Rockwell International Corporation | Two-level transistor structures and method utilizing minimal area therefor |
US4609429A (en) * | 1984-07-02 | 1986-09-02 | International Business Machines Corporation | Process for making a small dynamic memory cell structure |
US4753897A (en) * | 1986-03-14 | 1988-06-28 | Motorola Inc. | Method for providing contact separation in silicided devices using false gate |
US4908688A (en) * | 1986-03-14 | 1990-03-13 | Motorola, Inc. | Means and method for providing contact separation in silicided devices |
GB9115699D0 (en) * | 1991-07-19 | 1991-09-04 | Philips Electronic Associated | An overvoltage protected semiconductor switch |
US7729149B2 (en) * | 2007-05-01 | 2010-06-01 | Suvolta, Inc. | Content addressable memory cell including a junction field effect transistor |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4075045A (en) * | 1976-02-09 | 1978-02-21 | International Business Machines Corporation | Method for fabricating FET one-device memory cells with two layers of polycrystalline silicon and fabrication of integrated circuits containing arrays of the memory cells charge storage capacitors utilizing five basic pattern deliberating steps |
US4063274A (en) * | 1976-12-10 | 1977-12-13 | Rca Corporation | Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors |
-
1977
- 1977-02-04 NL NL7701172A patent/NL7701172A/xx not_active Application Discontinuation
- 1977-07-11 US US05/814,650 patent/US4161741A/en not_active Expired - Lifetime
-
1978
- 1978-02-01 DD DD78203514A patent/DD137161A5/xx unknown
- 1978-02-01 BR BR7800627A patent/BR7800627A/pt unknown
- 1978-02-01 SE SE7801169A patent/SE7801169L/xx unknown
- 1978-02-01 GB GB4035/78A patent/GB1594562A/en not_active Expired
- 1978-02-01 IT IT19890/78A patent/IT1092499B/it active
- 1978-02-02 DE DE2804412A patent/DE2804412C3/de not_active Expired
- 1978-02-02 BE BE184857A patent/BE863591A/fr unknown
- 1978-02-02 ES ES466564A patent/ES466564A1/es not_active Expired
- 1978-02-02 AU AU32945/78A patent/AU512104B2/en not_active Expired
- 1978-02-03 JP JP53010642A patent/JPS5846064B2/ja not_active Expired
- 1978-02-04 RO RO7893100A patent/RO76120A/fr unknown
- 1978-02-06 FR FR7803218A patent/FR2379877B1/fr not_active Expired
Non-Patent Citations (1)
Title |
---|
EXBK/71 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0007910A1 (fr) * | 1978-01-03 | 1980-02-06 | ERB, Darrell, M. | Memoire de charge stratifiee |
EP0007910A4 (fr) * | 1978-01-03 | 1980-11-28 | Darrell M Erb | Memoire de charge stratifiee. |
Also Published As
Publication number | Publication date |
---|---|
DE2804412C3 (de) | 1982-03-18 |
ES466564A1 (es) | 1979-01-16 |
JPS5397384A (en) | 1978-08-25 |
DD137161A5 (de) | 1979-08-15 |
IT1092499B (it) | 1985-07-12 |
GB1594562A (en) | 1981-07-30 |
RO76120B (ro) | 1983-05-30 |
DE2804412B2 (de) | 1981-06-19 |
JPS5846064B2 (ja) | 1983-10-14 |
BR7800627A (pt) | 1978-10-10 |
FR2379877B1 (fr) | 1986-02-14 |
BE863591A (fr) | 1978-08-02 |
SE7801169L (sv) | 1978-08-05 |
AU3294578A (en) | 1979-08-09 |
DE2804412A1 (de) | 1978-08-10 |
RO76120A (fr) | 1983-06-01 |
US4161741A (en) | 1979-07-17 |
NL7701172A (nl) | 1978-08-08 |
IT7819890A0 (it) | 1978-02-01 |
AU512104B2 (en) | 1980-09-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |