FR2366666A1 - Dispositif de memorisation a condensateur du type metal-isolant-semi-conducteur - Google Patents

Dispositif de memorisation a condensateur du type metal-isolant-semi-conducteur

Info

Publication number
FR2366666A1
FR2366666A1 FR7729793A FR7729793A FR2366666A1 FR 2366666 A1 FR2366666 A1 FR 2366666A1 FR 7729793 A FR7729793 A FR 7729793A FR 7729793 A FR7729793 A FR 7729793A FR 2366666 A1 FR2366666 A1 FR 2366666A1
Authority
FR
France
Prior art keywords
metal
insulation
semi
conductive capacitor
memorization device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7729793A
Other languages
English (en)
Other versions
FR2366666B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micro-Bit Corp
Original Assignee
Micro-Bit Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micro-Bit Corp filed Critical Micro-Bit Corp
Publication of FR2366666A1 publication Critical patent/FR2366666A1/fr
Application granted granted Critical
Publication of FR2366666B1 publication Critical patent/FR2366666B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/23—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using electrostatic storage on a common layer, e.g. Forrester-Haeff tubes or William tubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/22—Subject matter not provided for in other groups of this subclass including field-effect components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)

Abstract

La présente invention concerne une structure à condensateur-mémoire du type métal-isolant-servi-conducteur destinée à être utilisée dans une mémoire à accès par faisceau électronique. L'invention réside principalement dans le fait que l'on isole la couche semi-conductrice 3 recouverte par la couche isolante 2 à l'aide, par exemple d'une région périphérique 9 fortement dopée et d'une conductivité opposée à celle de la couche semi-conductrice, créant ainsi une jonction PN périphérique. L'invention est applicable aux mémoires à accès par faisceau électronique.
FR7729793A 1976-10-04 1977-10-04 Dispositif de memorisation a condensateur du type metal-isolant-semi-conducteur Granted FR2366666A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/729,099 US4079358A (en) 1976-10-04 1976-10-04 Buried junction MOS memory capacitor target for electron beam addressable memory and method of using same

Publications (2)

Publication Number Publication Date
FR2366666A1 true FR2366666A1 (fr) 1978-04-28
FR2366666B1 FR2366666B1 (fr) 1983-08-19

Family

ID=24929575

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7729793A Granted FR2366666A1 (fr) 1976-10-04 1977-10-04 Dispositif de memorisation a condensateur du type metal-isolant-semi-conducteur

Country Status (6)

Country Link
US (1) US4079358A (fr)
JP (1) JPS6037994B2 (fr)
CA (1) CA1104722A (fr)
DE (1) DE2744023A1 (fr)
FR (1) FR2366666A1 (fr)
GB (1) GB1590070A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5819142B2 (ja) * 1977-09-02 1983-04-16 富士通株式会社 半導体記憶装置
US4190849A (en) * 1977-09-19 1980-02-26 Motorola, Inc. Electronic-beam programmable semiconductor device structure
GB2104287B (en) * 1981-08-21 1985-02-20 Gen Electric Co Plc Data storage devices
EP0178664B1 (fr) * 1984-10-18 1992-08-05 Matsushita Electronics Corporation Dispositif détecteur d'image du type à l'état solide et méthode pour sa fabrication
US5391909A (en) * 1992-10-13 1995-02-21 Hughes Aircraft Company Detection of electron-beam scanning of a substrate
EP1284014A4 (fr) * 2000-04-20 2006-09-13 Digirad Corp Technique pour supprimer le courant de bord dans des dispositifs a semiconducteurs

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3761895A (en) * 1971-03-17 1973-09-25 Gen Electric Method and apparatus for storing and reading out charge in an insulating layer

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3886530A (en) * 1969-06-02 1975-05-27 Massachusetts Inst Technology Signal storage device
US3786441A (en) * 1971-11-24 1974-01-15 Gen Electric Method and device for storing information and providing an electric readout
US3763476A (en) * 1972-03-15 1973-10-02 Gen Electric Method and apparatus for storing and reading out charge in an insulating layer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3761895A (en) * 1971-03-17 1973-09-25 Gen Electric Method and apparatus for storing and reading out charge in an insulating layer

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/77 *

Also Published As

Publication number Publication date
GB1590070A (en) 1981-05-28
US4079358A (en) 1978-03-14
JPS6037994B2 (ja) 1985-08-29
JPS5345941A (en) 1978-04-25
CA1104722A (fr) 1981-07-07
FR2366666B1 (fr) 1983-08-19
DE2744023A1 (de) 1978-04-06

Similar Documents

Publication Publication Date Title
FR2364541A1 (fr) Cellule de memoire a acces direct avec une region de condensateur implantee, et son procede d'obtention
MY6900296A (en) Capacitor
FR2371042A1 (fr) Memoire dynamique a acces direct, avec des cellules de memoire de grande capacite
KR840003923A (ko) 반도체 메모리
KR850005160A (ko) 적층형 반도체 기억장치
FR2363198A1 (fr) Circuit avec un dispositif photosensible
FR2362495A1 (fr) Element photoelectrique pour dispositif de captation d'image semi-conducteur
FR2399738A1 (fr) Dispositif semi-conducteur comportant une capacite-mos
FR2366666A1 (fr) Dispositif de memorisation a condensateur du type metal-isolant-semi-conducteur
SE7507147L (sv) Felteffekttransistordon.
JPS56162875A (en) Semiconductor device
KR920007188A (ko) 용장(冗長)회로용 소거불능 eprom 셀
FR2423867A1 (fr) Dispositif a semi-conducteur monobloc protege contre les surtensions
SU631945A1 (ru) Устройство дл считывани информации
JPS6035834B2 (ja) 輻射線検出用半導体装置
GB1007936A (en) Improvements in or relating to semiconductive devices
GB1229385A (fr)
JPS5814747B2 (ja) 半導体記憶装置
ES322410A1 (es) Un dispositivo electrico semiconductor.
JPS6120148B2 (fr)
GB1271155A (en) Improvements in transistors
JPS55166967A (en) Junction type field effect transistor
JPS5521170A (en) Semiconductor memory
ES372372A1 (es) Un dispositivo semiconductor.
JPS5972175A (ja) 半導体装置

Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse