GB1271155A - Improvements in transistors - Google Patents

Improvements in transistors

Info

Publication number
GB1271155A
GB1271155A GB3691/71A GB369171A GB1271155A GB 1271155 A GB1271155 A GB 1271155A GB 3691/71 A GB3691/71 A GB 3691/71A GB 369171 A GB369171 A GB 369171A GB 1271155 A GB1271155 A GB 1271155A
Authority
GB
United Kingdom
Prior art keywords
region
collector
base
junction
additional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3691/71A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1271155A publication Critical patent/GB1271155A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1055—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices of the so-called bucket brigade type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Networks Using Active Elements (AREA)

Abstract

1,271,155. Transistors. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 23 April, 1969 [23 April, 1968], No. 3691/71. Divided out of 1,271,154. Heading H1K. In a planar transistor, which may form part of the integrated capacitor memory described in Specification 1,271,154, from which the present application is divided, the capacitance of or in parallel with the collector junction is increased by provision of an additional region adjoining the base region. This region is directly connected to one of the base and collector regions and forms a PN junction with a part of the other region sandwiched between it and the one region. In Fig. 4, the region, 53, is formed in the same diffusion as the emitter region and overlies a thicker part 51a of the base region extending down to a low resistivity inclusion 4a forming part of the collector. In a modification the inclusion is absent and the base region of uniform thickness. One or more inclusions of the same type as region 53 may be formed in the surface of the base region and connected by conductive tracks to region 53. Finally in the lateral transistor shown in Fig. 6 with a frame-shaped collector and central emitter 83, the additional region 92, of the same conductivity type as the base is channel-shaped and overlaps the collector almost completely except on the side at which the collector electrode is attached. The surface passivation may be silicon nitride and/or oxide and in Fig. 6 the epitaxial base layer has a heavily doped lower section 103. The proximity of the additional part of the collector to the surface is advantageous where the photosensitivity of the collector junction is to be used.
GB3691/71A 1968-04-23 1969-04-23 Improvements in transistors Expired GB1271155A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6805704.A NL162500C (en) 1968-04-23 1968-04-23 INTEGRATED CAPACITOR MEMORY.

Publications (1)

Publication Number Publication Date
GB1271155A true GB1271155A (en) 1972-04-19

Family

ID=19803412

Family Applications (2)

Application Number Title Priority Date Filing Date
GB20743/69A Expired GB1271154A (en) 1968-04-23 1969-04-23 Improvements in and relating to integrated capacitor memories
GB3691/71A Expired GB1271155A (en) 1968-04-23 1969-04-23 Improvements in transistors

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB20743/69A Expired GB1271154A (en) 1968-04-23 1969-04-23 Improvements in and relating to integrated capacitor memories

Country Status (11)

Country Link
JP (1) JPS509515B1 (en)
AT (1) AT301908B (en)
BE (1) BE731974A (en)
CH (1) CH511496A (en)
DE (2) DE1919507C3 (en)
DK (1) DK131253B (en)
ES (2) ES366285A1 (en)
FR (1) FR2011816A1 (en)
GB (2) GB1271154A (en)
NL (1) NL162500C (en)
SE (1) SE386299B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8574629B2 (en) * 2008-08-01 2013-11-05 Anteis S.A. Injectable hydrogel with an enhanced remanence and with an enhanced ability to create volume

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3356860A (en) * 1964-05-08 1967-12-05 Gen Micro Electronics Inc Memory device employing plurality of minority-carrier storage effect transistors interposed between plurality of transistors for electrical isolation

Also Published As

Publication number Publication date
ES386979A1 (en) 1973-12-01
NL162500C (en) 1980-05-16
DE1966847A1 (en) 1974-09-19
ES366285A1 (en) 1971-05-01
DK131253B (en) 1975-06-16
GB1271154A (en) 1972-04-19
DE1919507A1 (en) 1969-11-20
NL162500B (en) 1979-12-17
AT301908B (en) 1972-09-25
JPS509515B1 (en) 1975-04-14
DE1919507C3 (en) 1982-06-09
DE1919507B2 (en) 1979-12-06
NL6805704A (en) 1969-10-27
SE386299B (en) 1976-08-02
DK131253C (en) 1975-11-17
FR2011816A1 (en) 1970-03-13
BE731974A (en) 1969-10-23
CH511496A (en) 1971-08-15

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