JPS509515B1 - - Google Patents
Info
- Publication number
- JPS509515B1 JPS509515B1 JP44031055A JP3105569A JPS509515B1 JP S509515 B1 JPS509515 B1 JP S509515B1 JP 44031055 A JP44031055 A JP 44031055A JP 3105569 A JP3105569 A JP 3105569A JP S509515 B1 JPS509515 B1 JP S509515B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06G—ANALOGUE COMPUTERS
- G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
- G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
- G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
- G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
- G11C19/186—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/04—Shift registers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/891—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
- H10D84/895—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Software Systems (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Networks Using Active Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6805704.A NL162500C (nl) | 1968-04-23 | 1968-04-23 | Geintegreerd condensatorgeheugen. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS509515B1 true JPS509515B1 (ja) | 1975-04-14 |
Family
ID=19803412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP44031055A Pending JPS509515B1 (ja) | 1968-04-23 | 1969-04-23 |
Country Status (11)
| Country | Link |
|---|---|
| JP (1) | JPS509515B1 (ja) |
| AT (1) | AT301908B (ja) |
| BE (1) | BE731974A (ja) |
| CH (1) | CH511496A (ja) |
| DE (2) | DE1966847A1 (ja) |
| DK (1) | DK131253B (ja) |
| ES (2) | ES366285A1 (ja) |
| FR (1) | FR2011816A1 (ja) |
| GB (2) | GB1271155A (ja) |
| NL (1) | NL162500C (ja) |
| SE (1) | SE386299B (ja) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8574629B2 (en) * | 2008-08-01 | 2013-11-05 | Anteis S.A. | Injectable hydrogel with an enhanced remanence and with an enhanced ability to create volume |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3356860A (en) * | 1964-05-08 | 1967-12-05 | Gen Micro Electronics Inc | Memory device employing plurality of minority-carrier storage effect transistors interposed between plurality of transistors for electrical isolation |
-
1968
- 1968-04-23 NL NL6805704.A patent/NL162500C/xx active
-
1969
- 1969-04-17 DE DE19691966847 patent/DE1966847A1/de not_active Withdrawn
- 1969-04-17 DE DE1919507A patent/DE1919507C3/de not_active Expired
- 1969-04-18 DK DK214469AA patent/DK131253B/da unknown
- 1969-04-21 CH CH600269A patent/CH511496A/de not_active IP Right Cessation
- 1969-04-21 ES ES366285A patent/ES366285A1/es not_active Expired
- 1969-04-21 AT AT383569A patent/AT301908B/de not_active IP Right Cessation
- 1969-04-22 SE SE6905711A patent/SE386299B/xx unknown
- 1969-04-23 GB GB3691/71A patent/GB1271155A/en not_active Expired
- 1969-04-23 FR FR6912840A patent/FR2011816A1/fr not_active Withdrawn
- 1969-04-23 BE BE731974D patent/BE731974A/xx unknown
- 1969-04-23 GB GB20743/69A patent/GB1271154A/en not_active Expired
- 1969-04-23 JP JP44031055A patent/JPS509515B1/ja active Pending
-
1970
- 1970-12-31 ES ES386979A patent/ES386979A1/es not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| SE386299B (sv) | 1976-08-02 |
| DK131253B (da) | 1975-06-16 |
| GB1271155A (en) | 1972-04-19 |
| ES386979A1 (es) | 1973-12-01 |
| GB1271154A (en) | 1972-04-19 |
| DE1919507A1 (de) | 1969-11-20 |
| NL6805704A (ja) | 1969-10-27 |
| NL162500C (nl) | 1980-05-16 |
| FR2011816A1 (ja) | 1970-03-13 |
| DE1919507C3 (de) | 1982-06-09 |
| DK131253C (ja) | 1975-11-17 |
| BE731974A (ja) | 1969-10-23 |
| CH511496A (de) | 1971-08-15 |
| DE1919507B2 (ja) | 1979-12-06 |
| NL162500B (nl) | 1979-12-17 |
| ES366285A1 (es) | 1971-05-01 |
| AT301908B (de) | 1972-09-25 |
| DE1966847A1 (de) | 1974-09-19 |