ES366285A1 - Un dispositivo de memoria integrada de condensadores. - Google Patents

Un dispositivo de memoria integrada de condensadores.

Info

Publication number
ES366285A1
ES366285A1 ES366285A ES366285A ES366285A1 ES 366285 A1 ES366285 A1 ES 366285A1 ES 366285 A ES366285 A ES 366285A ES 366285 A ES366285 A ES 366285A ES 366285 A1 ES366285 A1 ES 366285A1
Authority
ES
Spain
Prior art keywords
transistors
capacitors
common
delay time
integrated capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES366285A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES366285A1 publication Critical patent/ES366285A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06GANALOGUE COMPUTERS
    • G06G7/00Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12Arrangements for performing computing operations, e.g. operational amplifiers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04Shift registers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1055Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices of the so-called bucket brigade type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Networks Using Active Elements (AREA)
ES366285A 1968-04-23 1969-04-21 Un dispositivo de memoria integrada de condensadores. Expired ES366285A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6805704.A NL162500C (nl) 1968-04-23 1968-04-23 Geintegreerd condensatorgeheugen.

Publications (1)

Publication Number Publication Date
ES366285A1 true ES366285A1 (es) 1971-05-01

Family

ID=19803412

Family Applications (2)

Application Number Title Priority Date Filing Date
ES366285A Expired ES366285A1 (es) 1968-04-23 1969-04-21 Un dispositivo de memoria integrada de condensadores.
ES386979A Expired ES386979A1 (es) 1968-04-23 1970-12-31 Perfeccionamientos introducidos en transistores.

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES386979A Expired ES386979A1 (es) 1968-04-23 1970-12-31 Perfeccionamientos introducidos en transistores.

Country Status (11)

Country Link
JP (1) JPS509515B1 (es)
AT (1) AT301908B (es)
BE (1) BE731974A (es)
CH (1) CH511496A (es)
DE (2) DE1919507C3 (es)
DK (1) DK131253B (es)
ES (2) ES366285A1 (es)
FR (1) FR2011816A1 (es)
GB (2) GB1271154A (es)
NL (1) NL162500C (es)
SE (1) SE386299B (es)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8574629B2 (en) * 2008-08-01 2013-11-05 Anteis S.A. Injectable hydrogel with an enhanced remanence and with an enhanced ability to create volume

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3356860A (en) * 1964-05-08 1967-12-05 Gen Micro Electronics Inc Memory device employing plurality of minority-carrier storage effect transistors interposed between plurality of transistors for electrical isolation

Also Published As

Publication number Publication date
ES386979A1 (es) 1973-12-01
NL162500C (nl) 1980-05-16
DE1966847A1 (de) 1974-09-19
DK131253B (da) 1975-06-16
GB1271154A (en) 1972-04-19
DE1919507A1 (de) 1969-11-20
NL162500B (nl) 1979-12-17
AT301908B (de) 1972-09-25
JPS509515B1 (es) 1975-04-14
DE1919507C3 (de) 1982-06-09
DE1919507B2 (es) 1979-12-06
NL6805704A (es) 1969-10-27
SE386299B (sv) 1976-08-02
DK131253C (es) 1975-11-17
FR2011816A1 (es) 1970-03-13
GB1271155A (en) 1972-04-19
BE731974A (es) 1969-10-23
CH511496A (de) 1971-08-15

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