GB1298053A - Semiconductor device for a trigger storage cell - Google Patents

Semiconductor device for a trigger storage cell

Info

Publication number
GB1298053A
GB1298053A GB788471A GB788471A GB1298053A GB 1298053 A GB1298053 A GB 1298053A GB 788471 A GB788471 A GB 788471A GB 788471 A GB788471 A GB 788471A GB 1298053 A GB1298053 A GB 1298053A
Authority
GB
United Kingdom
Prior art keywords
collector
emitter
information
transistors
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB788471A
Inventor
Jury Nikolaevich Dyakov
Vyacheslav Yakovlevich Kremlev
Vyacheslav Nikolaevich Strukov
Dzhamal Ohmarovich Chutuev
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kremlev V J
Original Assignee
Kremlev V J
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kremlev V J filed Critical Kremlev V J
Priority to GB788471A priority Critical patent/GB1298053A/en
Publication of GB1298053A publication Critical patent/GB1298053A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0772—Vertical bipolar transistor in combination with resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)

Abstract

1298053 Semi-conductor devices J N DYAKOV V Y KREMLEV V N STRUKOV and D O CHUTUEV 26 March 1971 7884/71 Heading H1K The invention relates to a multi-emitter transistor for use (as shown) with a like device to form a memory cell suitable for use in a storage matrix. The two transistors 1, 2 shown are formed in an N-type epitaxial layer carried by a P-type silicon substrate and are mutually isolated by a P-type diffused wall. Each has an "information" emitter 12, 16 (and may have several), an "address" emitter 11, 15, and a base contact 10, 14. The bases are each crosscoupled with a collector contact 17, 13, and power is supplied to a line linking second collector contacts 6, 7 of the transistors. The relative placing of the collectors and various emitters within each transistor is such that the normally required collector resistor is formed by that part of the epitaxial layer between the two collector contacts and is such that that part of the collector base junction beneath the "information" emitter is maintained under reverse bias at all times in operation to prevent the "information" emitter functioning as a spurious collector.
GB788471A 1971-03-26 1971-03-26 Semiconductor device for a trigger storage cell Expired GB1298053A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB788471A GB1298053A (en) 1971-03-26 1971-03-26 Semiconductor device for a trigger storage cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB788471A GB1298053A (en) 1971-03-26 1971-03-26 Semiconductor device for a trigger storage cell

Publications (1)

Publication Number Publication Date
GB1298053A true GB1298053A (en) 1972-11-29

Family

ID=9841655

Family Applications (1)

Application Number Title Priority Date Filing Date
GB788471A Expired GB1298053A (en) 1971-03-26 1971-03-26 Semiconductor device for a trigger storage cell

Country Status (1)

Country Link
GB (1) GB1298053A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5023194A (en) * 1988-02-11 1991-06-11 Exar Corporation Method of making a multicollector vertical pnp transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5023194A (en) * 1988-02-11 1991-06-11 Exar Corporation Method of making a multicollector vertical pnp transistor

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee