AT301908B - Integrierter Kondensatorspeicher - Google Patents

Integrierter Kondensatorspeicher

Info

Publication number
AT301908B
AT301908B AT383569A AT383569A AT301908B AT 301908 B AT301908 B AT 301908B AT 383569 A AT383569 A AT 383569A AT 383569 A AT383569 A AT 383569A AT 301908 B AT301908 B AT 301908B
Authority
AT
Austria
Prior art keywords
capacitor storage
integrated capacitor
integrated
storage
capacitor
Prior art date
Application number
AT383569A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT301908B publication Critical patent/AT301908B/de

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06GANALOGUE COMPUTERS
    • G06G7/00Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04Shift registers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/891Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID
    • H10D84/895Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D44/00, e.g. integration of charge-coupled devices [CCD] or charge injection devices [CID comprising bucket-brigade charge-coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Software Systems (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Networks Using Active Elements (AREA)
AT383569A 1968-04-23 1969-04-21 Integrierter Kondensatorspeicher AT301908B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6805704.A NL162500C (nl) 1968-04-23 1968-04-23 Geintegreerd condensatorgeheugen.

Publications (1)

Publication Number Publication Date
AT301908B true AT301908B (de) 1972-09-25

Family

ID=19803412

Family Applications (1)

Application Number Title Priority Date Filing Date
AT383569A AT301908B (de) 1968-04-23 1969-04-21 Integrierter Kondensatorspeicher

Country Status (11)

Country Link
JP (1) JPS509515B1 (de)
AT (1) AT301908B (de)
BE (1) BE731974A (de)
CH (1) CH511496A (de)
DE (2) DE1966847A1 (de)
DK (1) DK131253B (de)
ES (2) ES366285A1 (de)
FR (1) FR2011816A1 (de)
GB (2) GB1271155A (de)
NL (1) NL162500C (de)
SE (1) SE386299B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8574629B2 (en) * 2008-08-01 2013-11-05 Anteis S.A. Injectable hydrogel with an enhanced remanence and with an enhanced ability to create volume

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3356860A (en) * 1964-05-08 1967-12-05 Gen Micro Electronics Inc Memory device employing plurality of minority-carrier storage effect transistors interposed between plurality of transistors for electrical isolation

Also Published As

Publication number Publication date
SE386299B (sv) 1976-08-02
GB1271155A (en) 1972-04-19
JPS509515B1 (de) 1975-04-14
DK131253C (de) 1975-11-17
DE1919507C3 (de) 1982-06-09
NL162500B (nl) 1979-12-17
DE1966847A1 (de) 1974-09-19
DE1919507B2 (de) 1979-12-06
GB1271154A (en) 1972-04-19
FR2011816A1 (de) 1970-03-13
ES386979A1 (es) 1973-12-01
NL162500C (nl) 1980-05-16
DE1919507A1 (de) 1969-11-20
BE731974A (de) 1969-10-23
NL6805704A (de) 1969-10-27
DK131253B (da) 1975-06-16
ES366285A1 (es) 1971-05-01
CH511496A (de) 1971-08-15

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee