NL162500C - INTEGRATED CAPACITOR MEMORY. - Google Patents

INTEGRATED CAPACITOR MEMORY.

Info

Publication number
NL162500C
NL162500C NL6805704.A NL6805704A NL162500C NL 162500 C NL162500 C NL 162500C NL 6805704 A NL6805704 A NL 6805704A NL 162500 C NL162500 C NL 162500C
Authority
NL
Netherlands
Prior art keywords
integrated capacitor
capacitor memory
memory
integrated
capacitor
Prior art date
Application number
NL6805704.A
Other languages
Dutch (nl)
Other versions
NL162500B (en
NL6805704A (en
Inventor
Cornelis Ir Mulder
Frederik Leonard Joha Sangster
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL6805704.A priority Critical patent/NL162500C/en
Priority to DE19691966847 priority patent/DE1966847A1/en
Priority to DE1919507A priority patent/DE1919507C3/en
Priority to DK214469AA priority patent/DK131253B/en
Priority to ES366285A priority patent/ES366285A1/en
Priority to AT383569A priority patent/AT301908B/en
Priority to CH873370A priority patent/CH519792A/en
Priority to CH600269A priority patent/CH511496A/en
Priority to SE6905711A priority patent/SE386299B/en
Priority to FR6912840A priority patent/FR2011816A1/fr
Priority to GB20743/69A priority patent/GB1271154A/en
Priority to JP44031055A priority patent/JPS509515B1/ja
Priority to GB3691/71A priority patent/GB1271155A/en
Priority to BE731974D priority patent/BE731974A/xx
Publication of NL6805704A publication Critical patent/NL6805704A/xx
Priority to ES386979A priority patent/ES386979A1/en
Priority to US462974A priority patent/US3912944A/en
Publication of NL162500B publication Critical patent/NL162500B/en
Application granted granted Critical
Publication of NL162500C publication Critical patent/NL162500C/en

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06GANALOGUE COMPUTERS
    • G06G7/00Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12Arrangements for performing computing operations, e.g. operational amplifiers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • G11C19/186Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET using only one transistor per capacitor, e.g. bucket brigade shift register
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04Shift registers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1055Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices of the so-called bucket brigade type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Software Systems (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Networks Using Active Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
NL6805704.A 1968-04-23 1968-04-23 INTEGRATED CAPACITOR MEMORY. NL162500C (en)

Priority Applications (16)

Application Number Priority Date Filing Date Title
NL6805704.A NL162500C (en) 1968-04-23 1968-04-23 INTEGRATED CAPACITOR MEMORY.
DE19691966847 DE1966847A1 (en) 1968-04-23 1969-04-17 TRANSISTOR
DE1919507A DE1919507C3 (en) 1968-04-23 1969-04-17 Capacitor overcharging device
DK214469AA DK131253B (en) 1968-04-23 1969-04-18 Integrated capacitor storage.
AT383569A AT301908B (en) 1968-04-23 1969-04-21 Integrated capacitor storage
CH873370A CH519792A (en) 1968-04-23 1969-04-21 transistor
CH600269A CH511496A (en) 1968-04-23 1969-04-21 Integrated capacitive memory and method for operating the memory in a circuit arrangement
ES366285A ES366285A1 (en) 1968-04-23 1969-04-21 Improvements in and relating to integrated capacitor memories
SE6905711A SE386299B (en) 1968-04-23 1969-04-22 INTEGRATED CAPACITOR MEMORY
FR6912840A FR2011816A1 (en) 1968-04-23 1969-04-23
GB20743/69A GB1271154A (en) 1968-04-23 1969-04-23 Improvements in and relating to integrated capacitor memories
JP44031055A JPS509515B1 (en) 1968-04-23 1969-04-23
GB3691/71A GB1271155A (en) 1968-04-23 1969-04-23 Improvements in transistors
BE731974D BE731974A (en) 1968-04-23 1969-04-23
ES386979A ES386979A1 (en) 1968-04-23 1970-12-31 Improvements in and relating to integrated capacitor memories
US462974A US3912944A (en) 1968-04-23 1974-04-22 Integrated bucket brigade memory using transistor barrier capacitors for storage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6805704.A NL162500C (en) 1968-04-23 1968-04-23 INTEGRATED CAPACITOR MEMORY.

Publications (3)

Publication Number Publication Date
NL6805704A NL6805704A (en) 1969-10-27
NL162500B NL162500B (en) 1979-12-17
NL162500C true NL162500C (en) 1980-05-16

Family

ID=19803412

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6805704.A NL162500C (en) 1968-04-23 1968-04-23 INTEGRATED CAPACITOR MEMORY.

Country Status (11)

Country Link
JP (1) JPS509515B1 (en)
AT (1) AT301908B (en)
BE (1) BE731974A (en)
CH (1) CH511496A (en)
DE (2) DE1919507C3 (en)
DK (1) DK131253B (en)
ES (2) ES366285A1 (en)
FR (1) FR2011816A1 (en)
GB (2) GB1271154A (en)
NL (1) NL162500C (en)
SE (1) SE386299B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5574083B2 (en) * 2008-08-01 2014-08-20 アンタイス エス.エイ. Injectable hydrogel with high ability to give high persistence and volume

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3356860A (en) * 1964-05-08 1967-12-05 Gen Micro Electronics Inc Memory device employing plurality of minority-carrier storage effect transistors interposed between plurality of transistors for electrical isolation

Also Published As

Publication number Publication date
DK131253C (en) 1975-11-17
DE1919507A1 (en) 1969-11-20
DE1919507B2 (en) 1979-12-06
AT301908B (en) 1972-09-25
FR2011816A1 (en) 1970-03-13
ES366285A1 (en) 1971-05-01
CH511496A (en) 1971-08-15
GB1271155A (en) 1972-04-19
BE731974A (en) 1969-10-23
ES386979A1 (en) 1973-12-01
NL162500B (en) 1979-12-17
DE1966847A1 (en) 1974-09-19
JPS509515B1 (en) 1975-04-14
NL6805704A (en) 1969-10-27
GB1271154A (en) 1972-04-19
DK131253B (en) 1975-06-16
DE1919507C3 (en) 1982-06-09
SE386299B (en) 1976-08-02

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Legal Events

Date Code Title Description
VJC Lapsed due to non-payment of the due maintenance fee for the patent or patent application