FR2362495A1 - Element photoelectrique pour dispositif de captation d'image semi-conducteur - Google Patents
Element photoelectrique pour dispositif de captation d'image semi-conducteurInfo
- Publication number
- FR2362495A1 FR2362495A1 FR7721077A FR7721077A FR2362495A1 FR 2362495 A1 FR2362495 A1 FR 2362495A1 FR 7721077 A FR7721077 A FR 7721077A FR 7721077 A FR7721077 A FR 7721077A FR 2362495 A1 FR2362495 A1 FR 2362495A1
- Authority
- FR
- France
- Prior art keywords
- electrode
- photoelectric element
- semiconductor image
- image capture
- capture device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
- 238000001514 detection method Methods 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 230000001443 photoexcitation Effects 0.000 abstract 1
- 230000002123 temporal effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Elément photoélectrique pour dispositif de captation d'image semi-conducteur qui comprend une série de tels éléments, comportant chacun un ou plusieurs transistors à effet de champ MOS de commutation, répartis en ensemble unidimensionnel ou bidimensionnel sur un substrat semi-conducteur et excités en séquence temporelle par des circuits d'analyse Une électrode transparente ou semi-transparente 18 recouvre, avec interposition d'une pellicule d'oxyde isolante 17, une région de détection lumineuse dudit transistor, de façon à former entre l'électrode et le substrat une capacité Cox dans laquelle les charges engendrées sous l'électrode par photo-excitation sont emmagasinees avant d'être transmises à un conducteur de sortie de signal reliant en commun les drains 15 des transistors. Un tel élément a une bonne capacité d'emmagasinage pour un encombrement réduit.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9708476A JPS5323224A (en) | 1976-08-16 | 1976-08-16 | Solid pickup unit |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2362495A1 true FR2362495A1 (fr) | 1978-03-17 |
FR2362495B1 FR2362495B1 (fr) | 1982-02-05 |
Family
ID=14182763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7721077A Granted FR2362495A1 (fr) | 1976-08-16 | 1977-07-08 | Element photoelectrique pour dispositif de captation d'image semi-conducteur |
Country Status (6)
Country | Link |
---|---|
US (1) | US4143389A (fr) |
JP (1) | JPS5323224A (fr) |
DE (1) | DE2736878C2 (fr) |
FR (1) | FR2362495A1 (fr) |
GB (1) | GB1527069A (fr) |
NL (1) | NL177164C (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2449377A1 (fr) * | 1979-02-19 | 1980-09-12 | Hitachi Ltd | Dispositif de formation d'image a semi-conducteur |
FR2533371A1 (fr) * | 1982-09-21 | 1984-03-23 | Thomson Csf | Structure de grille pour circuit integre comportant des elements du type grille-isolant-semi-conducteur et procede de realisation d'un circuit integre utilisant une telle structure |
FR2559619A1 (fr) * | 1984-02-10 | 1985-08-16 | Thomson Csf | Dispositif photosensible avec filtres integres pour la separation des couleurs et procede de fabrication |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5941351B2 (ja) * | 1976-09-13 | 1984-10-06 | 株式会社日立製作所 | カラ−用固体撮像素子 |
JPS53125791A (en) * | 1977-04-08 | 1978-11-02 | Toshiba Corp | Solidstate pick up unit |
FR2433871A1 (fr) * | 1978-08-18 | 1980-03-14 | Hitachi Ltd | Dispositif de formation d'image a semi-conducteur |
US4198646A (en) * | 1978-10-13 | 1980-04-15 | Hughes Aircraft Company | Monolithic imager for near-IR |
JPS5822901B2 (ja) * | 1978-12-01 | 1983-05-12 | 株式会社日立製作所 | 固体撮像装置 |
JPS6033342B2 (ja) * | 1979-06-04 | 1985-08-02 | 株式会社日立製作所 | 固体撮像装置 |
US4365106A (en) * | 1979-08-24 | 1982-12-21 | Pulvari Charles F | Efficient method and apparatus for converting solar energy to electrical energy |
IL64042A (en) * | 1980-11-10 | 1984-08-31 | Santa Barbara Res Center | Charge coupled device open circuit image detector |
US4479139A (en) * | 1980-11-10 | 1984-10-23 | Santa Barbara Research Center | Charge coupled device open circuit image detector |
JPS58222563A (ja) * | 1982-06-18 | 1983-12-24 | Hitachi Ltd | 半導体光検出装置 |
JPS59107578A (ja) * | 1982-12-11 | 1984-06-21 | Junichi Nishizawa | 半導体光電変換装置 |
JPS59108462A (ja) * | 1982-12-14 | 1984-06-22 | Olympus Optical Co Ltd | 静電誘導トランジスタを具える固体撮像素子 |
JPS6153765A (ja) * | 1984-08-23 | 1986-03-17 | Fuji Photo Film Co Ltd | 固体撮像デバイス |
JPS6216140U (fr) * | 1985-07-12 | 1987-01-30 | ||
JPS62269357A (ja) * | 1986-05-19 | 1987-11-21 | Sony Corp | 固体撮像装置 |
JPH01146354A (ja) * | 1987-12-02 | 1989-06-08 | Mitsubishi Electric Corp | 半導体記憶装置 |
US5307169A (en) * | 1991-05-07 | 1994-04-26 | Olympus Optical Co., Ltd. | Solid-state imaging device using high relative dielectric constant material as insulating film |
JP3103064B2 (ja) * | 1998-04-23 | 2000-10-23 | 松下電子工業株式会社 | 固体撮像装置およびその製造方法 |
US7791116B1 (en) | 1998-10-14 | 2010-09-07 | Micron Technology, Inc. | CMOS imager having a nitride dielectric |
US6414342B1 (en) * | 1999-06-18 | 2002-07-02 | Micron Technology Inc. | Photogate with improved short wavelength response for a CMOS imager |
JP4419264B2 (ja) * | 2000-03-31 | 2010-02-24 | ソニー株式会社 | 固体撮像装置 |
US10823459B1 (en) | 2017-08-02 | 2020-11-03 | Walter B. Freeman | Solar thermal collecting system |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1564953A1 (de) * | 1966-12-21 | 1970-03-05 | Telefunken Patent | Solarzelle |
US3521244A (en) * | 1968-10-23 | 1970-07-21 | Rca Corp | Electrical circuit for processing periodic signal pulses |
US3906544A (en) * | 1971-07-14 | 1975-09-16 | Gen Electric | Semiconductor imaging detector device |
JPS5131167B2 (fr) * | 1972-04-18 | 1976-09-04 | ||
US3866067A (en) * | 1973-05-21 | 1975-02-11 | Fairchild Camera Instr Co | Charge coupled device with exposure and antiblooming control |
US3877057A (en) * | 1973-05-29 | 1975-04-08 | Gen Electric | Apparatus for sensing radiation and providing electrical read out |
US3877058A (en) * | 1973-12-13 | 1975-04-08 | Westinghouse Electric Corp | Radiation charge transfer memory device |
JPS51114079A (en) * | 1975-03-31 | 1976-10-07 | Fujitsu Ltd | Construction of semiconductor memory device |
US4060796A (en) * | 1975-04-11 | 1977-11-29 | Fujitsu Limited | Semiconductor memory device |
-
1976
- 1976-08-16 JP JP9708476A patent/JPS5323224A/ja active Granted
-
1977
- 1977-07-08 FR FR7721077A patent/FR2362495A1/fr active Granted
- 1977-08-04 GB GB32773/77A patent/GB1527069A/en not_active Expired
- 1977-08-11 US US05/823,646 patent/US4143389A/en not_active Expired - Lifetime
- 1977-08-16 DE DE2736878A patent/DE2736878C2/de not_active Expired
- 1977-08-16 NL NLAANVRAGE7709057,A patent/NL177164C/xx not_active IP Right Cessation
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2449377A1 (fr) * | 1979-02-19 | 1980-09-12 | Hitachi Ltd | Dispositif de formation d'image a semi-conducteur |
FR2533371A1 (fr) * | 1982-09-21 | 1984-03-23 | Thomson Csf | Structure de grille pour circuit integre comportant des elements du type grille-isolant-semi-conducteur et procede de realisation d'un circuit integre utilisant une telle structure |
EP0109865A1 (fr) * | 1982-09-21 | 1984-05-30 | Thomson-Csf | Procédé de fabrication de circuits intégrés comportants des éléments du type grille-isolant-semiconducteur à au moins deux niveaux de grille |
US4695860A (en) * | 1982-09-21 | 1987-09-22 | Thomson-Csf | Gate structure for an integrated circuit comprising elements of the gate-insulator-semiconductor type and a method of fabrication of an integrated circuit using said structure |
FR2559619A1 (fr) * | 1984-02-10 | 1985-08-16 | Thomson Csf | Dispositif photosensible avec filtres integres pour la separation des couleurs et procede de fabrication |
EP0152353A1 (fr) * | 1984-02-10 | 1985-08-21 | Thomson-Csf | Dispositif photosensible avec filtres intégrés pour la séparation des couleurs, et procédé de fabrication |
Also Published As
Publication number | Publication date |
---|---|
JPS5756830B2 (fr) | 1982-12-01 |
DE2736878A1 (de) | 1978-02-23 |
GB1527069A (en) | 1978-10-04 |
NL177164B (nl) | 1985-03-01 |
NL177164C (nl) | 1985-08-01 |
FR2362495B1 (fr) | 1982-02-05 |
NL7709057A (nl) | 1978-02-20 |
DE2736878C2 (de) | 1985-07-04 |
US4143389A (en) | 1979-03-06 |
JPS5323224A (en) | 1978-03-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |