FR2449377A1 - Dispositif de formation d'image a semi-conducteur - Google Patents

Dispositif de formation d'image a semi-conducteur

Info

Publication number
FR2449377A1
FR2449377A1 FR8003362A FR8003362A FR2449377A1 FR 2449377 A1 FR2449377 A1 FR 2449377A1 FR 8003362 A FR8003362 A FR 8003362A FR 8003362 A FR8003362 A FR 8003362A FR 2449377 A1 FR2449377 A1 FR 2449377A1
Authority
FR
France
Prior art keywords
mos transistors
semiconductor image
source
vertical
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8003362A
Other languages
English (en)
Other versions
FR2449377B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of FR2449377A1 publication Critical patent/FR2449377A1/fr
Application granted granted Critical
Publication of FR2449377B1 publication Critical patent/FR2449377B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

DISPOSITIF DE FORMATION D'IMAGE SEMI-CONDUCTEUR QUI COMPREND DANS UNE REGION SUPERFICIELLE PRINCIPALE D'UN SUBSTRAT SEMI-CONDUCTEUR MONOLITHIQUE: DES PHOTODIODES REPARTIES EN UN ENSEMBLE BIDIMENSIONNEL, DES TRANSISTORS MOS DE COMMUTATION VERTICALE ET DES TRANSISTORS MOS DE COMMUTATION HORIZONTALE D'ADRESSAGE DES PHOTODIODES, DES TRANSISTORS MOS QUI CONSTITUENT DES CIRCUITS D'ANALYSE VERTICALE ET HORIZONTALE DE FERMETURE ET D'OUVERTURE DES TRANSISTORS MOS DE COMMUTATION, ET DES TRANSISTORS MOS QUI CONSTITUENT L'AUTRE ENSEMBLE DES CIRCUITS PERIPHERIQUES, CES PHOTODIODES ETANT FAITES DE REGIONS DE SOURCE DES TRANSISTORS MOS DE COMMUTATION VERTICALE ET DU SUBSTRAT SEMI-CONDUCTEUR. CE DISPOSITIF DE FORMATION D'IMAGE SEMI-CONDUCTEUR EST CARACTERISE EN CE QUE PARMI LES REGIONS DE SOURCE ET DE DRAIN DES DIFFERENTS TRANSISTORS MOS, LES REGIONS DE SOURCE DES TRANSISTORS MOS DE COMMUTATION VERTICALE ONT UNE CONCENTRATION D'IMPURETES EN SURFACE ET UNE PROFONDEUR DE JONCTION, RESPECTIVEMENT PLUS FAIBLE ET PLUS IMPORTANTE QUE LES AUTRES REGIONS DE SOURCE ET DE DRAIN.
FR8003362A 1979-02-19 1980-02-15 Dispositif de formation d'image a semi-conducteur Granted FR2449377A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54017340A JPS6033340B2 (ja) 1979-02-19 1979-02-19 固体撮像装置

Publications (2)

Publication Number Publication Date
FR2449377A1 true FR2449377A1 (fr) 1980-09-12
FR2449377B1 FR2449377B1 (fr) 1981-04-17

Family

ID=11941316

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8003362A Granted FR2449377A1 (fr) 1979-02-19 1980-02-15 Dispositif de formation d'image a semi-conducteur

Country Status (7)

Country Link
US (1) US4316205A (fr)
JP (1) JPS6033340B2 (fr)
CA (1) CA1128197A (fr)
DE (1) DE3005766A1 (fr)
FR (1) FR2449377A1 (fr)
GB (1) GB2046015B (fr)
NL (1) NL8000961A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0126417A2 (fr) * 1983-05-16 1984-11-28 Fuji Photo Film Co., Ltd. Détecteur d'images par rayonnement et méthode pour détecter de telles images avec ce détecteur

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2943143A1 (de) * 1979-10-25 1981-05-07 Siemens AG, 1000 Berlin und 8000 München Infrarotempfindler x-y-ccd-sensor und verfahren zu seiner herstellung
JPS5771172A (en) * 1980-10-22 1982-05-01 Hitachi Ltd Solid state image pick-up element and manufacture thereof
JPS57108363U (fr) * 1980-12-24 1982-07-03
JPS57173274A (en) * 1981-04-17 1982-10-25 Nec Corp Solid-state image pickup device
JPS589361A (ja) * 1981-07-08 1983-01-19 Hitachi Ltd 固体撮像素子
JPS5850873A (ja) * 1981-09-21 1983-03-25 Nec Corp 高感度固体撮像装置およびその駆動法
JPS59196669A (ja) * 1983-04-22 1984-11-08 Matsushita Electronics Corp 固体撮像装置
JPS6043857A (ja) * 1983-08-20 1985-03-08 Mitsubishi Electric Corp 固体撮像装置とその製造方法
JPS59130468A (ja) * 1983-12-14 1984-07-27 Hitachi Ltd 固体撮像装置
JP2594992B2 (ja) * 1987-12-04 1997-03-26 株式会社日立製作所 固体撮像装置
JP2576766B2 (ja) * 1993-07-08 1997-01-29 日本電気株式会社 半導体基板の製造方法
JPH07177256A (ja) * 1993-12-21 1995-07-14 Murata Mach Ltd 付属電話機を備えたファクシミリ装置
US6198148B1 (en) * 1998-12-08 2001-03-06 United Microelectronics Corp. Photodiode
TW494574B (en) 1999-12-01 2002-07-11 Innotech Corp Solid state imaging device, method of manufacturing the same, and solid state imaging system
KR100464949B1 (ko) * 2000-08-31 2005-01-05 매그나칩 반도체 유한회사 포토다이오드의 표면 특성을 향상시킬 수 있는 이미지센서 제조 방법
JP4251326B2 (ja) * 2004-03-30 2009-04-08 サンケン電気株式会社 半導体装置
FR2935839B1 (fr) * 2008-09-05 2011-08-05 Commissariat Energie Atomique Capteur d'images cmos a reflexion lumineuse

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2362495A1 (fr) * 1976-08-16 1978-03-17 Hitachi Ltd Element photoelectrique pour dispositif de captation d'image semi-conducteur
FR2378412A1 (fr) * 1977-01-24 1978-08-18 Hitachi Ltd Dispositif de formation d'image a semi-conducteurs
FR2379914A1 (fr) * 1977-02-04 1978-09-01 Hitachi Ltd Dispositif de formation d'image a semi-conducteurs
FR2415398A1 (fr) * 1978-01-23 1979-08-17 Hitachi Ltd Dispositif de formation d'image a semi-conducteur

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2362495A1 (fr) * 1976-08-16 1978-03-17 Hitachi Ltd Element photoelectrique pour dispositif de captation d'image semi-conducteur
FR2378412A1 (fr) * 1977-01-24 1978-08-18 Hitachi Ltd Dispositif de formation d'image a semi-conducteurs
FR2379914A1 (fr) * 1977-02-04 1978-09-01 Hitachi Ltd Dispositif de formation d'image a semi-conducteurs
FR2415398A1 (fr) * 1978-01-23 1979-08-17 Hitachi Ltd Dispositif de formation d'image a semi-conducteur

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0126417A2 (fr) * 1983-05-16 1984-11-28 Fuji Photo Film Co., Ltd. Détecteur d'images par rayonnement et méthode pour détecter de telles images avec ce détecteur
EP0126417A3 (fr) * 1983-05-16 1986-10-01 Fuji Photo Film Co., Ltd. Détecteur d'images par rayonnement et méthode pour détecter de telles images avec ce détecteur

Also Published As

Publication number Publication date
NL8000961A (nl) 1980-08-21
FR2449377B1 (fr) 1981-04-17
JPS55110476A (en) 1980-08-25
JPS6033340B2 (ja) 1985-08-02
GB2046015B (en) 1983-05-11
GB2046015A (en) 1980-11-05
CA1128197A (fr) 1982-07-20
DE3005766A1 (de) 1980-08-21
US4316205A (en) 1982-02-16

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Legal Events

Date Code Title Description
ST Notification of lapse