FR2373190A1 - Circuit de detection pour des dispositifs de transfert de charges a semiconducteur - Google Patents

Circuit de detection pour des dispositifs de transfert de charges a semiconducteur

Info

Publication number
FR2373190A1
FR2373190A1 FR7736072A FR7736072A FR2373190A1 FR 2373190 A1 FR2373190 A1 FR 2373190A1 FR 7736072 A FR7736072 A FR 7736072A FR 7736072 A FR7736072 A FR 7736072A FR 2373190 A1 FR2373190 A1 FR 2373190A1
Authority
FR
France
Prior art keywords
detection circuit
charge transfer
semiconductor
transfer devices
load transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7736072A
Other languages
English (en)
Other versions
FR2373190B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of FR2373190A1 publication Critical patent/FR2373190A1/fr
Application granted granted Critical
Publication of FR2373190B1 publication Critical patent/FR2373190B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45479—Differential amplifiers with semiconductor devices only characterised by the way of common mode signal rejection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H15/00—Transversal filters
    • H03H15/02—Transversal filters using analogue shift registers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Filters That Use Time-Delay Elements (AREA)
  • Amplifiers (AREA)

Abstract

L'invention concerne un appareil semi-conducteur et, plus particulièrement, des circuits electriques pour détecter le signal de sortie d'un dispositif semi-conducteur à transfert de charges. Le circuit de détection du signal de sortie du dispositif à transfert de charges comprend deux amplificateurs 40 et 60 qui sont prévus pour détecter l'un le signal différentiel utile apparaissant sur les électrodes partagées et, l'autre, pour supprimer le signal inutile de mode commun. En outre, le circuit de détection comprend des moyens de remise à zéro pour éliminer les signaux parasites dus aux charges réparties et des circuits de maintien pour éliminer le bruit thermique. L'invention est applicable aux dispositifs de transfert de charges à semi-conducteur du type à charges couplées ou à godets.
FR7736072A 1976-12-06 1977-11-30 Circuit de detection pour des dispositifs de transfert de charges a semiconducteur Granted FR2373190A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/747,900 US4075514A (en) 1976-12-06 1976-12-06 Sensing circuit for semiconductor charge transfer devices

Publications (2)

Publication Number Publication Date
FR2373190A1 true FR2373190A1 (fr) 1978-06-30
FR2373190B1 FR2373190B1 (fr) 1980-08-22

Family

ID=25007156

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7736072A Granted FR2373190A1 (fr) 1976-12-06 1977-11-30 Circuit de detection pour des dispositifs de transfert de charges a semiconducteur

Country Status (15)

Country Link
US (1) US4075514A (fr)
JP (1) JPS5370772A (fr)
BE (1) BE861441A (fr)
CA (1) CA1111560A (fr)
CH (1) CH623960A5 (fr)
DE (1) DE2753358C3 (fr)
DK (1) DK146020C (fr)
ES (1) ES464794A1 (fr)
FR (1) FR2373190A1 (fr)
GB (1) GB1589320A (fr)
HK (1) HK25184A (fr)
IL (1) IL53497A (fr)
IT (1) IT1088583B (fr)
NL (1) NL7713143A (fr)
SE (1) SE415066B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2373856A1 (fr) * 1976-12-08 1978-07-07 Western Electric Co Dispositif de transfert de charges ayant une entree lineaire differentielle de partage de la charge

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4126794A (en) * 1977-07-25 1978-11-21 Bell Telephone Laboratories, Incorporated Semiconductor charge coupled device with split electrode configuration
US4151429A (en) * 1977-10-03 1979-04-24 Northern Telecom Limited Differential charge sensing circuit for MOS devices
US4245199A (en) * 1978-05-11 1981-01-13 Bell Telephone Laboratories, Incorporated Semiconductor CCD transversal filter with controllable threshold level
JPS613779U (ja) * 1984-06-14 1986-01-10 日野自動車株式会社 自動車の車体
JPH0693765B2 (ja) * 1985-11-06 1994-11-16 キヤノン株式会社 撮像装置
JPS62156584U (fr) * 1986-03-28 1987-10-05
US4814648A (en) * 1987-09-24 1989-03-21 Texas Instruments Incorporated Low 1/f noise amplifier for CCD imagers
US7576570B1 (en) * 2006-08-22 2009-08-18 Altera Corporation Signal amplitude detection circuitry without pattern dependencies for high-speed serial links

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3389340A (en) * 1964-09-30 1968-06-18 Robertshaw Controls Co Common mode rejection differential amplifier
NL7202070A (fr) * 1972-02-17 1973-08-21
GB1436110A (en) * 1972-09-25 1976-05-19 Rca Corp Circuit for amplifying charge
US3969636A (en) * 1975-06-30 1976-07-13 General Electric Company Charge sensing circuit for charge transfer devices
US4071775A (en) * 1976-04-02 1978-01-31 Texas Instruments Incorporated Charge coupled differential amplifier for transversal filter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2373856A1 (fr) * 1976-12-08 1978-07-07 Western Electric Co Dispositif de transfert de charges ayant une entree lineaire differentielle de partage de la charge

Also Published As

Publication number Publication date
IT1088583B (it) 1985-06-10
IL53497A (en) 1980-01-31
FR2373190B1 (fr) 1980-08-22
ES464794A1 (es) 1978-09-01
DK541477A (da) 1978-06-07
GB1589320A (en) 1981-05-13
BE861441A (fr) 1978-03-31
DK146020C (da) 1983-12-12
CH623960A5 (fr) 1981-06-30
JPS5636583B2 (fr) 1981-08-25
JPS5370772A (en) 1978-06-23
IL53497A0 (en) 1978-01-31
NL7713143A (nl) 1978-06-08
DE2753358B2 (de) 1980-07-03
SE7713770L (sv) 1978-06-07
DK146020B (da) 1983-05-24
DE2753358A1 (de) 1978-06-08
HK25184A (en) 1984-03-30
DE2753358C3 (de) 1981-05-27
SE415066B (sv) 1980-09-01
CA1111560A (fr) 1981-10-27
US4075514A (en) 1978-02-21

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Legal Events

Date Code Title Description
ST Notification of lapse