FR2360175A1 - Circuit d'entree pour un dispositif a couplage de charge - Google Patents

Circuit d'entree pour un dispositif a couplage de charge

Info

Publication number
FR2360175A1
FR2360175A1 FR7722958A FR7722958A FR2360175A1 FR 2360175 A1 FR2360175 A1 FR 2360175A1 FR 7722958 A FR7722958 A FR 7722958A FR 7722958 A FR7722958 A FR 7722958A FR 2360175 A1 FR2360175 A1 FR 2360175A1
Authority
FR
France
Prior art keywords
input circuit
coupling device
load coupling
potential
delta
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7722958A
Other languages
English (en)
Other versions
FR2360175B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of FR2360175A1 publication Critical patent/FR2360175A1/fr
Application granted granted Critical
Publication of FR2360175B1 publication Critical patent/FR2360175B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808—Input structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

L'invention concerne les dispositifs à couplage de charge. Dans un circuit d'entrée d'un dispositif à couplage de charge, l'électrode de source S est maintenue à un potentiel inférieur de (VT + DELTA V) par rapport au potentiel de l'électrode de grille d'entrée G1 , en désignant par (VT + DELTA V) la tension grille-source d'un transistor à effet de champ à l'état de conduction. Du fait de l'intégration sur un même substrat, la différence de potentiel de surface entre l'électrode de source et l'électrode de grille est indépendante de la tension de seuil VT . Application aux dispositifs de prise de vue à l'état solide.
FR7722958A 1976-07-26 1977-07-26 Circuit d'entree pour un dispositif a couplage de charge Granted FR2360175A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/708,397 US4191896A (en) 1976-07-26 1976-07-26 Low noise CCD input circuit

Publications (2)

Publication Number Publication Date
FR2360175A1 true FR2360175A1 (fr) 1978-02-24
FR2360175B1 FR2360175B1 (fr) 1979-09-07

Family

ID=24845643

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7722958A Granted FR2360175A1 (fr) 1976-07-26 1977-07-26 Circuit d'entree pour un dispositif a couplage de charge

Country Status (7)

Country Link
US (1) US4191896A (fr)
JP (1) JPS5315780A (fr)
CA (1) CA1101122A (fr)
DE (1) DE2733674C3 (fr)
FR (1) FR2360175A1 (fr)
GB (1) GB1579031A (fr)
NL (1) NL191425C (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2836473A1 (de) * 1978-08-21 1980-03-06 Siemens Ag Ccd-eingangsschaltung nach dem fill and spill-prinzip
US4503550A (en) * 1982-07-01 1985-03-05 Rca Corporation Dynamic CCD input source pulse generating circuit
NL8302731A (nl) * 1983-08-02 1985-03-01 Philips Nv Halfgeleiderinrichting.
DD231682A1 (de) * 1984-12-20 1986-01-02 Werk Fernsehelektronik Veb Eingangsschaltung fuer ladungsgekoppelte bauelemente
NL8501542A (nl) * 1985-05-30 1986-12-16 Philips Nv Ladingsgekoppelde inrichting.
US4644572A (en) * 1985-11-12 1987-02-17 Eastman Kodak Company Fill and spill for charge input to a CCD
US5965910A (en) * 1997-04-29 1999-10-12 Ohmeda Inc. Large cell charge coupled device for spectroscopy

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1096042A (fr) * 1973-06-13 1981-02-17 Walter F. Kosonocky Injection du signal dans un circuit a transfert de charge
US3986198A (en) * 1973-06-13 1976-10-12 Rca Corporation Introducing signal at low noise level to charge-coupled circuit
US3881117A (en) * 1973-09-10 1975-04-29 Bell Telephone Labor Inc Input circuit for semiconductor charge transfer devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
CA1101122A (fr) 1981-05-12
NL191425C (nl) 1995-07-17
JPS5544466B2 (fr) 1980-11-12
JPS5315780A (en) 1978-02-14
US4191896A (en) 1980-03-04
GB1579031A (en) 1980-11-12
DE2733674C3 (de) 1979-12-06
FR2360175B1 (fr) 1979-09-07
DE2733674B2 (de) 1979-04-12
NL191425B (nl) 1995-02-16
DE2733674A1 (de) 1978-02-23
NL7708232A (nl) 1978-01-30

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