FR2390803A1 - Circuit d'exploitation pour un dispositif a transfert de charge - Google Patents

Circuit d'exploitation pour un dispositif a transfert de charge

Info

Publication number
FR2390803A1
FR2390803A1 FR7813848A FR7813848A FR2390803A1 FR 2390803 A1 FR2390803 A1 FR 2390803A1 FR 7813848 A FR7813848 A FR 7813848A FR 7813848 A FR7813848 A FR 7813848A FR 2390803 A1 FR2390803 A1 FR 2390803A1
Authority
FR
France
Prior art keywords
diameter
charge transfer
operating circuit
transfer device
connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7813848A
Other languages
English (en)
Other versions
FR2390803B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2390803A1 publication Critical patent/FR2390803A1/fr
Application granted granted Critical
Publication of FR2390803B1 publication Critical patent/FR2390803B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76825—Structures for regeneration, refreshing, leakage compensation or the like

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Networks Using Active Elements (AREA)

Abstract

L'invention concerne un circuit d'exploitation pour un dispositif à transfert de charge. Dans ce dispositif, qui comporte une rangée d'électrodes diamétre 1, diamétre 2, diamétre 3, E1, diamétre A, E2 sur une couche sermi-conductrice 1, une électrode de transfert E1 est raccordée par une connexion A à un transistor de commutation T1 commandé par une tension de cadence U1 ainsi qu'à la porte 4 d'un condensateur à effet de champ 4, 7 dont l'électrode opposée 5 est chargée par une tension impulsionnelle UD , dont les flancs de montée sont retardés respectivement par rapport aux instants auxquels la tension de cadence U1 est interrompue, la connexion A servant de sortie pour les signaux et étant reliée à un étage de sortie AS. Application notamment dans des dispositifs à transfert de charge analogiques ou numériques.
FR7813848A 1977-05-13 1978-05-10 Circuit d'exploitation pour un dispositif a transfert de charge Granted FR2390803A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2721812A DE2721812C2 (de) 1977-05-13 1977-05-13 Auswerteschaltung für eine Ladungsverschiebeanordnung

Publications (2)

Publication Number Publication Date
FR2390803A1 true FR2390803A1 (fr) 1978-12-08
FR2390803B1 FR2390803B1 (fr) 1984-11-09

Family

ID=6008936

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7813848A Granted FR2390803A1 (fr) 1977-05-13 1978-05-10 Circuit d'exploitation pour un dispositif a transfert de charge

Country Status (5)

Country Link
US (1) US4272693A (fr)
JP (1) JPS53141589A (fr)
DE (1) DE2721812C2 (fr)
FR (1) FR2390803A1 (fr)
GB (1) GB1561628A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3021172A1 (de) * 1979-06-04 1980-12-11 Texas Instruments Inc Ladungsgekoppelter speicher und verfahren zum betreiben eines ladungsgekoppelten speichers
US4538287A (en) * 1979-06-04 1985-08-27 Texas Instruments Incorporated Floating gate amplifier using conductive coupling for charge coupled devices
EP0028675B1 (fr) * 1979-08-29 1984-06-06 Rockwell International Corporation Circuit intégré à transfert de charges
US4631739A (en) * 1984-11-28 1986-12-23 Xerox Corporation High dynamic range charge amplifier
NL8502860A (nl) * 1985-10-21 1987-05-18 Philips Nv Besturingswerkwijze voor een geintegreerd circuit uitgevoerd met een gemeenschappelijke schakelelektrode voor ten minste twee tegengesteld schakelbare transistoren, en daartoe geschikte inrichting.
US5394003A (en) * 1993-05-20 1995-02-28 Electronic Decisions Inc. Acoustic charge transport device buffered architecture

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2318485A1 (fr) * 1975-07-14 1977-02-11 Northern Telecom Ltd Circuit de detection non destructive de charges mobiles dans un dispositif a transfert de charge

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3623132A (en) * 1970-12-14 1971-11-23 North American Rockwell Charge sensing circuit
FR2154395B1 (fr) * 1971-05-03 1974-06-28 Ibm
DE2541686A1 (de) * 1975-09-18 1977-03-24 Siemens Ag Regenerierschaltung fuer ladungsgekoppelte elemente

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2318485A1 (fr) * 1975-07-14 1977-02-11 Northern Telecom Ltd Circuit de detection non destructive de charges mobiles dans un dispositif a transfert de charge

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXRV/75 *

Also Published As

Publication number Publication date
JPS53141589A (en) 1978-12-09
JPS6352474B2 (fr) 1988-10-19
GB1561628A (en) 1980-02-27
FR2390803B1 (fr) 1984-11-09
DE2721812A1 (de) 1978-11-23
US4272693A (en) 1981-06-09
DE2721812C2 (de) 1986-09-18

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Legal Events

Date Code Title Description
ST Notification of lapse