FR2396414A1 - Transistor a effet de champ a canal de longueur extremement courte - Google Patents

Transistor a effet de champ a canal de longueur extremement courte

Info

Publication number
FR2396414A1
FR2396414A1 FR7819005A FR7819005A FR2396414A1 FR 2396414 A1 FR2396414 A1 FR 2396414A1 FR 7819005 A FR7819005 A FR 7819005A FR 7819005 A FR7819005 A FR 7819005A FR 2396414 A1 FR2396414 A1 FR 2396414A1
Authority
FR
France
Prior art keywords
effect transistor
extremely short
channel field
source
length channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7819005A
Other languages
English (en)
Other versions
FR2396414B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2396414A1 publication Critical patent/FR2396414A1/fr
Application granted granted Critical
Publication of FR2396414B1 publication Critical patent/FR2396414B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66484—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with multiple gate, at least one gate being an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

L'invention concerne un transistor à effet de champ à canal de longueur extrêmement courte Dans ce transistor, qui est réalisé sur un substrat 1 et comporte une région de source 2 et une région de drain 3, un isolant 4 et une première électrode de porte 5, cette dernière recouvre la région semi-conductrice entre la source et le drain 2 et 3 formée dans une zone 7 jouxtant directement la région de source 2 sur laquelle il est prévu une seconde électrode de porte 8 isolée de la première électrode 5 par une couche isolante 6 ainsi qu'une source de tension de polarisation UG1 et une borne 10 d'application d'une tension de commande UG2 . Application notamment aux circuits à transistors à haute fréquence et à haute tension.
FR7819005A 1977-06-30 1978-06-26 Transistor a effet de champ a canal de longueur extremement courte Granted FR2396414A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772729656 DE2729656A1 (de) 1977-06-30 1977-06-30 Feldeffekttransistor mit extrem kurzer kanallaenge

Publications (2)

Publication Number Publication Date
FR2396414A1 true FR2396414A1 (fr) 1979-01-26
FR2396414B1 FR2396414B1 (fr) 1982-12-17

Family

ID=6012850

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7819005A Granted FR2396414A1 (fr) 1977-06-30 1978-06-26 Transistor a effet de champ a canal de longueur extremement courte

Country Status (5)

Country Link
US (1) US4306352A (fr)
JP (1) JPS5414177A (fr)
DE (1) DE2729656A1 (fr)
FR (1) FR2396414A1 (fr)
GB (1) GB1586392A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0019758A1 (fr) * 1979-05-28 1980-12-10 Siemens Aktiengesellschaft Transistor à effet de champ à canal court et procédé pour sa fabrication

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5833870A (ja) * 1981-08-24 1983-02-28 Hitachi Ltd 半導体装置
US4468574A (en) * 1982-05-03 1984-08-28 General Electric Company Dual gate CMOS transistor circuits having reduced electrode capacitance
US4472821A (en) * 1982-05-03 1984-09-18 General Electric Company Dynamic shift register utilizing CMOS dual gate transistors
US4672423A (en) * 1982-09-30 1987-06-09 International Business Machines Corporation Voltage controlled resonant transmission semiconductor device
NL8204855A (nl) * 1982-12-16 1984-07-16 Philips Nv Veldeffekttransistor met geisoleerde stuurelektrode en werkwijze ter vervaardiging daarvan.
US5243212A (en) * 1987-12-22 1993-09-07 Siliconix Incorporated Transistor with a charge induced drain extension
US5108940A (en) * 1987-12-22 1992-04-28 Siliconix, Inc. MOS transistor with a charge induced drain extension
US5264380A (en) * 1989-12-18 1993-11-23 Motorola, Inc. Method of making an MOS transistor having improved transconductance and short channel characteristics
JPH03280071A (ja) * 1990-03-29 1991-12-11 Konica Corp 印刷版の形成方法
US5900657A (en) * 1997-05-19 1999-05-04 National Semiconductor Corp. MOS switch that reduces clock feed through in a switched capacitor circuit
US7616490B2 (en) * 2006-10-17 2009-11-10 Sandisk Corporation Programming non-volatile memory with dual voltage select gate structure
US9761722B1 (en) 2016-06-24 2017-09-12 International Business Machines Corporation Isolation of bulk FET devices with embedded stressors

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1505959A (fr) * 1965-12-22 1967-12-15 Philips Nv Dispositif semi-conducteur
FR1511783A (fr) * 1966-04-15 1968-02-02 Philco Ford Corp Transistor à métal-isolant-semi-conducteur, comportant des électrodes de commandemultiples
DE2019683A1 (de) * 1969-04-28 1970-11-05 Itt Ind Gmbh Deutsche Isolierschicht-Feldeffekttransistor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3454844A (en) * 1966-07-01 1969-07-08 Hughes Aircraft Co Field effect device with overlapping insulated gates
US3660697A (en) * 1970-02-16 1972-05-02 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3912545A (en) * 1974-05-13 1975-10-14 Motorola Inc Process and product for making a single supply N-channel silicon gate device
JPS5154789A (fr) * 1974-11-09 1976-05-14 Nippon Electric Co
US4037308A (en) * 1975-03-21 1977-07-26 Bell Telephone Laboratories, Incorporated Methods for making transistor structures
JPS51114079A (en) * 1975-03-31 1976-10-07 Fujitsu Ltd Construction of semiconductor memory device
JPS51118969A (en) * 1975-04-11 1976-10-19 Fujitsu Ltd Manufacturing method of semiconductor memory
US4091278A (en) * 1976-08-18 1978-05-23 Honeywell Information Systems Inc. Time-independent circuit for multiplying and adding charge

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1505959A (fr) * 1965-12-22 1967-12-15 Philips Nv Dispositif semi-conducteur
FR1511783A (fr) * 1966-04-15 1968-02-02 Philco Ford Corp Transistor à métal-isolant-semi-conducteur, comportant des électrodes de commandemultiples
DE2019683A1 (de) * 1969-04-28 1970-11-05 Itt Ind Gmbh Deutsche Isolierschicht-Feldeffekttransistor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NV8093/68 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0019758A1 (fr) * 1979-05-28 1980-12-10 Siemens Aktiengesellschaft Transistor à effet de champ à canal court et procédé pour sa fabrication

Also Published As

Publication number Publication date
FR2396414B1 (fr) 1982-12-17
JPS5414177A (en) 1979-02-02
GB1586392A (en) 1981-03-18
US4306352A (en) 1981-12-22
DE2729656A1 (de) 1979-01-11

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