FR1505959A - Dispositif semi-conducteur - Google Patents
Dispositif semi-conducteurInfo
- Publication number
- FR1505959A FR1505959A FR88473A FR88473A FR1505959A FR 1505959 A FR1505959 A FR 1505959A FR 88473 A FR88473 A FR 88473A FR 88473 A FR88473 A FR 88473A FR 1505959 A FR1505959 A FR 1505959A
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
- Liquid Crystal (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB54333/65A GB1136569A (en) | 1965-12-22 | 1965-12-22 | Insulated gate field effect transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1505959A true FR1505959A (fr) | 1967-12-15 |
Family
ID=10470665
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR88473A Expired FR1505959A (fr) | 1965-12-22 | 1966-12-22 | Dispositif semi-conducteur |
Country Status (8)
Country | Link |
---|---|
US (1) | US3436623A (fr) |
JP (1) | JPS4931592B1 (fr) |
CH (1) | CH470085A (fr) |
DE (1) | DE1564475C2 (fr) |
FR (1) | FR1505959A (fr) |
GB (2) | GB1139170A (fr) |
NL (1) | NL155130B (fr) |
SE (1) | SE348320B (fr) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2396415A1 (fr) * | 1977-06-30 | 1979-01-26 | Siemens Ag | Transistor a effet de champ a canal de longueur extremement courte |
FR2396416A1 (fr) * | 1977-06-30 | 1979-01-26 | Siemens Ag | Transistor a effet de champ a canal de courte longueur |
FR2396414A1 (fr) * | 1977-06-30 | 1979-01-26 | Siemens Ag | Transistor a effet de champ a canal de longueur extremement courte |
EP0444712A1 (fr) * | 1990-03-02 | 1991-09-04 | Nippon Telegraph And Telephone Corporation | Transistor en couche mince multigrille |
US5446304A (en) * | 1991-09-30 | 1995-08-29 | Sony Corporation | Insulated-gate-type field effect transistor which has subgates that have different spacing from the substrate than the main gate |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3573571A (en) * | 1967-10-13 | 1971-04-06 | Gen Electric | Surface-diffused transistor with isolated field plate |
US3686544A (en) * | 1969-02-10 | 1972-08-22 | Philips Corp | Mosfet with dual dielectric of titanium dioxide on silicon dioxide to prevent surface current migration path |
US3577210A (en) * | 1969-02-17 | 1971-05-04 | Hughes Aircraft Co | Solid-state storage device |
JPS5145438B1 (fr) * | 1971-06-25 | 1976-12-03 | ||
JPS5633867B2 (fr) * | 1971-12-08 | 1981-08-06 | ||
JPS5535865B2 (fr) * | 1972-12-07 | 1980-09-17 | ||
JPS5154789A (fr) * | 1974-11-09 | 1976-05-14 | Nippon Electric Co | |
US4041519A (en) * | 1975-02-10 | 1977-08-09 | Melen Roger D | Low transient effect switching device and method |
US4057820A (en) * | 1976-06-29 | 1977-11-08 | Westinghouse Electric Corporation | Dual gate MNOS transistor |
US4245165A (en) * | 1978-11-29 | 1981-01-13 | International Business Machines Corporation | Reversible electrically variable active parameter trimming apparatus utilizing floating gate as control |
US5187552A (en) * | 1979-03-28 | 1993-02-16 | Hendrickson Thomas E | Shielded field-effect transistor devices |
US5202574A (en) * | 1980-05-02 | 1993-04-13 | Texas Instruments Incorporated | Semiconductor having improved interlevel conductor insulation |
FR2499769A1 (fr) * | 1981-02-06 | 1982-08-13 | Efcis | Transistor a effet de champ a grille isolee ayant une capacite parasite reduite et procede de fabrication |
US4499482A (en) * | 1981-12-22 | 1985-02-12 | Levine Michael A | Weak-source for cryogenic semiconductor device |
GB2118774B (en) * | 1982-02-25 | 1985-11-27 | Sharp Kk | Insulated gate thin film transistor |
JPS61120466A (ja) * | 1984-11-16 | 1986-06-07 | Fujitsu Ltd | 半導体光検出素子 |
ATE77177T1 (de) * | 1985-10-04 | 1992-06-15 | Hosiden Corp | Duennfilmtransistor und verfahren zu seiner herstellung. |
US5012315A (en) * | 1989-01-09 | 1991-04-30 | Regents Of University Of Minnesota | Split-gate field effect transistor |
US5079620A (en) * | 1989-01-09 | 1992-01-07 | Regents Of The University Of Minnesota | Split-gate field effect transistor |
JPH03280071A (ja) * | 1990-03-29 | 1991-12-11 | Konica Corp | 印刷版の形成方法 |
JP3548237B2 (ja) * | 1994-08-29 | 2004-07-28 | シャープ株式会社 | 薄膜トランジスタ |
US7064034B2 (en) | 2002-07-02 | 2006-06-20 | Sandisk Corporation | Technique for fabricating logic elements using multiple gate layers |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE641360A (fr) * | 1962-12-17 | |||
US3339128A (en) * | 1964-07-31 | 1967-08-29 | Rca Corp | Insulated offset gate field effect transistor |
US3355598A (en) * | 1964-11-25 | 1967-11-28 | Rca Corp | Integrated logic arrays employing insulated-gate field-effect devices having a common source region and shared gates |
-
1965
- 1965-12-22 GB GB40362/68A patent/GB1139170A/en not_active Expired
- 1965-12-22 GB GB54333/65A patent/GB1136569A/en not_active Expired
-
1966
- 1966-12-19 CH CH1815566A patent/CH470085A/de unknown
- 1966-12-19 SE SE17363/66A patent/SE348320B/xx unknown
- 1966-12-20 DE DE1564475A patent/DE1564475C2/de not_active Expired
- 1966-12-20 JP JP41083031A patent/JPS4931592B1/ja active Pending
- 1966-12-21 NL NL666617926A patent/NL155130B/xx not_active IP Right Cessation
- 1966-12-22 US US603906A patent/US3436623A/en not_active Expired - Lifetime
- 1966-12-22 FR FR88473A patent/FR1505959A/fr not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2396415A1 (fr) * | 1977-06-30 | 1979-01-26 | Siemens Ag | Transistor a effet de champ a canal de longueur extremement courte |
FR2396416A1 (fr) * | 1977-06-30 | 1979-01-26 | Siemens Ag | Transistor a effet de champ a canal de courte longueur |
FR2396414A1 (fr) * | 1977-06-30 | 1979-01-26 | Siemens Ag | Transistor a effet de champ a canal de longueur extremement courte |
EP0444712A1 (fr) * | 1990-03-02 | 1991-09-04 | Nippon Telegraph And Telephone Corporation | Transistor en couche mince multigrille |
US5124769A (en) * | 1990-03-02 | 1992-06-23 | Nippon Telegraph And Telephone Corporation | Thin film transistor |
US5446304A (en) * | 1991-09-30 | 1995-08-29 | Sony Corporation | Insulated-gate-type field effect transistor which has subgates that have different spacing from the substrate than the main gate |
Also Published As
Publication number | Publication date |
---|---|
SE348320B (fr) | 1972-08-28 |
US3436623A (en) | 1969-04-01 |
GB1136569A (en) | 1968-12-11 |
GB1139170A (en) | 1969-01-08 |
DE1564475A1 (de) | 1969-12-11 |
NL155130B (nl) | 1977-11-15 |
NL6617926A (fr) | 1967-06-23 |
DE1564475C2 (de) | 1984-01-26 |
JPS4931592B1 (fr) | 1974-08-22 |
CH470085A (de) | 1969-03-15 |
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