FR2396416A1 - Transistor a effet de champ a canal de courte longueur - Google Patents

Transistor a effet de champ a canal de courte longueur

Info

Publication number
FR2396416A1
FR2396416A1 FR7819007A FR7819007A FR2396416A1 FR 2396416 A1 FR2396416 A1 FR 2396416A1 FR 7819007 A FR7819007 A FR 7819007A FR 7819007 A FR7819007 A FR 7819007A FR 2396416 A1 FR2396416 A1 FR 2396416A1
Authority
FR
France
Prior art keywords
field effect
effect transistor
gate electrode
channel field
short length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7819007A
Other languages
English (en)
Other versions
FR2396416B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2396416A1 publication Critical patent/FR2396416A1/fr
Application granted granted Critical
Publication of FR2396416B1 publication Critical patent/FR2396416B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66484—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with multiple gate, at least one gate being an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)

Abstract

L'invention concerne un transistor à effet de champ à canal de courte longueur. Dans ce transistor à effet de champ qui possède des régions de source et de drain 2 et 3 réalisées dans un substrat semi-conducteur 1 et qui possède une première électrode de porte séparée du semi-conducteur par une couche isolante 4, la première électrode de porte 5a, 5b est subdivisée en deux parties par une fente 6 au-dessus de laquelle est prévue une seconde électrode de porte 8 séparée de la première électrode par une couche isolante 7, les deux parties 5a, 5b de la première électrode de porte étant reliées à des sources de tension de polarisation 10, 11 tandis que la seconde électrode de porte 8 est reliée à une borne de commande 9. Application notamment aux circuits à transistors à haute fréquence et à haute tension.
FR7819007A 1977-06-30 1978-06-26 Transistor a effet de champ a canal de courte longueur Granted FR2396416A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772729658 DE2729658A1 (de) 1977-06-30 1977-06-30 Feldeffekttransistor mit extrem kurzer kanallaenge

Publications (2)

Publication Number Publication Date
FR2396416A1 true FR2396416A1 (fr) 1979-01-26
FR2396416B1 FR2396416B1 (fr) 1982-12-17

Family

ID=6012852

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7819007A Granted FR2396416A1 (fr) 1977-06-30 1978-06-26 Transistor a effet de champ a canal de courte longueur

Country Status (4)

Country Link
JP (1) JPS5414175A (fr)
DE (1) DE2729658A1 (fr)
FR (1) FR2396416A1 (fr)
GB (1) GB1586423A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4319263A (en) * 1978-05-18 1982-03-09 Texas Instruments Incorporated Double level polysilicon series transistor devices
JPS57204172A (en) * 1981-06-08 1982-12-14 Ibm Field effect transistor
US4587709A (en) * 1983-06-06 1986-05-13 International Business Machines Corporation Method of making short channel IGFET

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3355598A (en) * 1964-11-25 1967-11-28 Rca Corp Integrated logic arrays employing insulated-gate field-effect devices having a common source region and shared gates
FR1505959A (fr) * 1965-12-22 1967-12-15 Philips Nv Dispositif semi-conducteur

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1511783A (fr) * 1966-04-15 1968-02-02 Philco Ford Corp Transistor à métal-isolant-semi-conducteur, comportant des électrodes de commandemultiples

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3355598A (en) * 1964-11-25 1967-11-28 Rca Corp Integrated logic arrays employing insulated-gate field-effect devices having a common source region and shared gates
FR1505959A (fr) * 1965-12-22 1967-12-15 Philips Nv Dispositif semi-conducteur

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NV700/71 *

Also Published As

Publication number Publication date
DE2729658A1 (de) 1979-01-11
JPS5414175A (en) 1979-02-02
FR2396416B1 (fr) 1982-12-17
GB1586423A (en) 1981-03-18

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Legal Events

Date Code Title Description
ST Notification of lapse