FR2397070A1 - Transistor a induction, statique et montage comportant de tels transistors - Google Patents

Transistor a induction, statique et montage comportant de tels transistors

Info

Publication number
FR2397070A1
FR2397070A1 FR7820381A FR7820381A FR2397070A1 FR 2397070 A1 FR2397070 A1 FR 2397070A1 FR 7820381 A FR7820381 A FR 7820381A FR 7820381 A FR7820381 A FR 7820381A FR 2397070 A1 FR2397070 A1 FR 2397070A1
Authority
FR
France
Prior art keywords
transistors
static
channel
induction
transistor containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7820381A
Other languages
English (en)
Other versions
FR2397070B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Zaidan Hojin Handotai Kenkyu Shinkokai
Original Assignee
Zaidan Hojin Handotai Kenkyu Shinkokai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8179677A external-priority patent/JPS6020910B2/ja
Priority claimed from JP52090018A external-priority patent/JPS5931989B2/ja
Priority claimed from JP9169977A external-priority patent/JPS5425681A/ja
Priority claimed from JP11091477A external-priority patent/JPS5444486A/ja
Priority claimed from JP11431677A external-priority patent/JPS5447587A/ja
Priority claimed from JP15419777A external-priority patent/JPS5912017B2/ja
Priority claimed from JP52156149A external-priority patent/JPS5921176B2/ja
Priority claimed from JP52157629A external-priority patent/JPS598068B2/ja
Application filed by Zaidan Hojin Handotai Kenkyu Shinkokai filed Critical Zaidan Hojin Handotai Kenkyu Shinkokai
Publication of FR2397070A1 publication Critical patent/FR2397070A1/fr
Publication of FR2397070B1 publication Critical patent/FR2397070B1/fr
Application granted granted Critical
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
    • H01L27/0225—Charge injection in static induction transistor logic structures [SITL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Memories (AREA)

Abstract

a. Transistor à induction, statique et montage comportant de tels transistors. b. Composant caractérisé en ce qu'il comprend une région de canal orientée perpendiculairement à la surface du substrat, un drain prévu à une extrémité du canal et une source à l'autre extrémité ainsi que deux portes adjacentes au canal de façon à former globalement un canal de courant, la première porte ayant une couche d'appauvrissement correspondant au signal de commande et la seconde porte créant une couche d'appauvrissement sans application correspondant au potentiel.
FR7820381A 1977-07-07 1978-07-07 Transistor a induction, statique et montage comportant de tels transistors Granted FR2397070A1 (fr)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP8179677A JPS6020910B2 (ja) 1977-07-07 1977-07-07 静電誘導トランジスタ及び半導体集積回路
JP52090018A JPS5931989B2 (ja) 1977-07-27 1977-07-27 半導体メモリ
JP9169977A JPS5425681A (en) 1977-07-29 1977-07-29 Semiconductor memory
JP11091477A JPS5444486A (en) 1977-09-14 1977-09-14 Semiconductor memory and semiconductor ic
JP11431677A JPS5447587A (en) 1977-09-22 1977-09-22 Semiconductor memory
JP15419777A JPS5912017B2 (ja) 1977-12-20 1977-12-20 半導体集積回路
JP52156149A JPS5921176B2 (ja) 1977-12-24 1977-12-24 静電誘導トランジスタ半導体集積回路
JP52157629A JPS598068B2 (ja) 1977-12-31 1977-12-31 半導体集積回路

Publications (2)

Publication Number Publication Date
FR2397070A1 true FR2397070A1 (fr) 1979-02-02
FR2397070B1 FR2397070B1 (fr) 1984-06-15

Family

ID=27572732

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7820381A Granted FR2397070A1 (fr) 1977-07-07 1978-07-07 Transistor a induction, statique et montage comportant de tels transistors

Country Status (5)

Country Link
US (1) US4284997A (fr)
DE (3) DE2829966C2 (fr)
FR (1) FR2397070A1 (fr)
GB (1) GB2000908B (fr)
NL (1) NL191914C (fr)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4985738A (en) * 1978-01-06 1991-01-15 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor switching device
US5175598A (en) * 1978-01-06 1992-12-29 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor switching device
US5227647A (en) * 1978-01-06 1993-07-13 Zaidan Hojin Handotai Kenkyu Shinkokai Semiconductor switching device
JPS5598871A (en) * 1979-01-22 1980-07-28 Semiconductor Res Found Static induction transistor
JPS5598872A (en) * 1979-01-22 1980-07-28 Semiconductor Res Found Semiconductor device
JPS55124259A (en) * 1979-03-19 1980-09-25 Semiconductor Res Found Semiconductor device
JPS56165473A (en) * 1980-05-24 1981-12-19 Semiconductor Res Found Semiconductor pickup device
JPH077844B2 (ja) * 1981-11-30 1995-01-30 財団法人半導体研究振興会 静電誘導型半導体光電変換装置
JPS5895877A (ja) * 1981-12-01 1983-06-07 Semiconductor Res Found 半導体光電変換装置
JPS5943581A (ja) * 1982-09-03 1984-03-10 Junichi Nishizawa 半導体光電変換装置
JPS5945781A (ja) * 1982-09-09 1984-03-14 Fuji Photo Film Co Ltd 半導体撮像装置
JPS59107578A (ja) * 1982-12-11 1984-06-21 Junichi Nishizawa 半導体光電変換装置
JPS59107570A (ja) * 1982-12-13 1984-06-21 Fuji Photo Film Co Ltd 半導体撮像装置
DE3345212A1 (de) * 1983-12-14 1985-06-27 Telefunken electronic GmbH, 7100 Heilbronn Unipolartransistor
JPS62105478A (ja) * 1985-11-01 1987-05-15 新技術開発事業団 半導体装置
US4791462A (en) * 1987-09-10 1988-12-13 Siliconix Incorporated Dense vertical j-MOS transistor
JP2538984B2 (ja) * 1988-04-20 1996-10-02 株式会社豊田自動織機製作所 静電誘導形半導体装置
EP0499979A3 (en) 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
US5581100A (en) * 1994-08-30 1996-12-03 International Rectifier Corporation Trench depletion MOSFET
US5910665A (en) * 1995-12-29 1999-06-08 Texas Instruments Incorporated Low capacitance power VFET method and device
US6330181B1 (en) * 1998-09-29 2001-12-11 Texas Instruments Incorporated Method of forming a gate device with raised channel
US20030030051A1 (en) * 2001-08-09 2003-02-13 International Rectifier Corporation Superjunction device with improved avalanche capability and breakdown voltage
WO2004070849A1 (fr) * 2003-02-06 2004-08-19 Siemens Aktiengesellschaft Transistor a effet de champ a jonction
US7166890B2 (en) 2003-10-21 2007-01-23 Srikant Sridevan Superjunction device with improved ruggedness
WO2006085267A2 (fr) * 2005-02-08 2006-08-17 Nxp B.V. Structure de dispositif a semi-conducteur, a plaque de champ conique et a geometrie cylindrique de la zone de derive
KR100747657B1 (ko) * 2006-10-26 2007-08-08 삼성전자주식회사 매크로 및 마이크로 주파수 튜닝이 가능한 반도체 소자 및이를 갖는 안테나와 주파수 튜닝 회로
US7691734B2 (en) * 2007-03-01 2010-04-06 International Business Machines Corporation Deep trench based far subcollector reachthrough
US8274128B2 (en) 2007-03-23 2012-09-25 Siliconix Technology C. V. Ir Semiconductor device with buffer layer
US9722041B2 (en) 2012-09-19 2017-08-01 Vishay-Siliconix Breakdown voltage blocking device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1527828A (fr) * 1967-02-21 1968-06-07 Dispositifs à effets de champ à canaux multiples intégrés
FR2391563A1 (fr) * 1977-05-15 1978-12-15 Zaidan Hojin Handotai Kenkyu Composant semi-conducteur integre
FR2408220A1 (fr) * 1977-11-05 1979-06-01 Nippon Musical Instruments Mfg Dispositif semi-conducteur integre sitl comprenant un transistor a induction statique

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2930950A (en) * 1956-12-10 1960-03-29 Teszner Stanislas High power field-effect transistor
JPS5217720B1 (fr) * 1971-07-31 1977-05-17
GB1543363A (en) * 1975-02-26 1979-04-04 Nippon Electric Co Dual-gate schottky barrier gate field effect transistors
JPS5811102B2 (ja) * 1975-12-09 1983-03-01 ザイダンホウジン ハンドウタイケンキユウシンコウカイ 半導体集積回路
JPS5838938B2 (ja) * 1976-08-03 1983-08-26 財団法人半導体研究振興会 半導体集積回路
GB1602361A (en) * 1977-02-21 1981-11-11 Zaidan Hojin Handotai Kenkyu Semiconductor memory devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1527828A (fr) * 1967-02-21 1968-06-07 Dispositifs à effets de champ à canaux multiples intégrés
FR2391563A1 (fr) * 1977-05-15 1978-12-15 Zaidan Hojin Handotai Kenkyu Composant semi-conducteur integre
FR2408220A1 (fr) * 1977-11-05 1979-06-01 Nippon Musical Instruments Mfg Dispositif semi-conducteur integre sitl comprenant un transistor a induction statique

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/75 *
EXBK/77 *

Also Published As

Publication number Publication date
GB2000908B (en) 1982-09-02
NL7807236A (nl) 1979-01-09
NL191914B (nl) 1996-06-03
FR2397070B1 (fr) 1984-06-15
DE2829966C2 (de) 1985-11-14
GB2000908A (en) 1979-01-17
DE2858191C2 (fr) 1989-02-02
DE2858190C2 (fr) 1990-05-03
NL191914C (nl) 1996-10-04
US4284997A (en) 1981-08-18
DE2829966A1 (de) 1979-02-01

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