FR2391563A1 - Composant semi-conducteur integre - Google Patents
Composant semi-conducteur integreInfo
- Publication number
- FR2391563A1 FR2391563A1 FR7814455A FR7814455A FR2391563A1 FR 2391563 A1 FR2391563 A1 FR 2391563A1 FR 7814455 A FR7814455 A FR 7814455A FR 7814455 A FR7814455 A FR 7814455A FR 2391563 A1 FR2391563 A1 FR 2391563A1
- Authority
- FR
- France
- Prior art keywords
- transistor
- integrated semiconductor
- semiconductor component
- serving
- logic circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000006698 induction Effects 0.000 abstract 2
- 230000003068 static effect Effects 0.000 abstract 2
- 230000000295 complement effect Effects 0.000 abstract 1
- 238000004904 shortening Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/091—Integrated injection logic or merged transistor logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
- H01L27/0225—Charge injection in static induction transistor logic structures [SITL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Logic Circuits (AREA)
Abstract
a. L'invention concerne un circuit logique à semi-conducteur intégré. b. La référence Q représente un transistor bipolaire du type pnp, servant de transistor injecteur. Qd représente un transistor à induction statique à canal n servant de transistor excitateur, et possédant deux drains séparés D1 et D2 . Selon l'invention, on introduit un transistor complémentaire Qb à induction statique à canal n pour réaliser une dérivation du courant entre la porte et la source du transistor Qd excitateur. c. On obtient, par cette disposition un circuit logique intégré où la vitesse d'exécution des opérations est accélérée grâce au raccourcissement de certains trajets.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52055778A JPS5918870B2 (ja) | 1977-05-15 | 1977-05-15 | 半導体集積回路 |
JP6264877A JPS53147483A (en) | 1977-05-28 | 1977-05-28 | Semiconductor ic |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2391563A1 true FR2391563A1 (fr) | 1978-12-15 |
FR2391563B1 FR2391563B1 (fr) | 1984-04-06 |
Family
ID=26396678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7814455A Granted FR2391563A1 (fr) | 1977-05-15 | 1978-05-16 | Composant semi-conducteur integre |
Country Status (4)
Country | Link |
---|---|
DE (1) | DE2820913A1 (fr) |
FR (1) | FR2391563A1 (fr) |
GB (1) | GB1602984A (fr) |
NL (1) | NL188061C (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2397070A1 (fr) * | 1977-07-07 | 1979-02-02 | Zaidan Hojin Handotai Kenkyu | Transistor a induction, statique et montage comportant de tels transistors |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3205950A1 (de) * | 1981-10-22 | 1983-05-05 | Robert Bosch Gmbh, 7000 Stuttgart | Bipolar integrierte inverstransistorlogik |
JP4777630B2 (ja) * | 2004-09-21 | 2011-09-21 | 株式会社日立製作所 | 半導体装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2379913A1 (fr) * | 1977-02-02 | 1978-09-01 | Zaidan Hojin Handotai Kenkyu | Semi-conducteur a caracteristique i-v non sature et circuit integre comportant un tel semi-conducteur |
FR2381373A1 (fr) * | 1977-02-21 | 1978-09-15 | Zaidan Hojin Handotai Kenkyu | Memoire semi-conductrice rapide, a grande densite |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7414273A (nl) * | 1974-11-01 | 1976-05-04 | Philips Nv | Logische schakeling. |
-
1978
- 1978-05-12 DE DE19782820913 patent/DE2820913A1/de active Granted
- 1978-05-12 GB GB1934678A patent/GB1602984A/en not_active Expired
- 1978-05-12 NL NL7805149A patent/NL188061C/xx not_active IP Right Cessation
- 1978-05-16 FR FR7814455A patent/FR2391563A1/fr active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2379913A1 (fr) * | 1977-02-02 | 1978-09-01 | Zaidan Hojin Handotai Kenkyu | Semi-conducteur a caracteristique i-v non sature et circuit integre comportant un tel semi-conducteur |
FR2381373A1 (fr) * | 1977-02-21 | 1978-09-15 | Zaidan Hojin Handotai Kenkyu | Memoire semi-conductrice rapide, a grande densite |
Non-Patent Citations (2)
Title |
---|
EXBK/75 * |
EXBK/77 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2397070A1 (fr) * | 1977-07-07 | 1979-02-02 | Zaidan Hojin Handotai Kenkyu | Transistor a induction, statique et montage comportant de tels transistors |
Also Published As
Publication number | Publication date |
---|---|
NL188061B (nl) | 1991-10-16 |
GB1602984A (en) | 1981-11-18 |
NL7805149A (nl) | 1978-11-17 |
DE2820913A1 (de) | 1978-11-23 |
NL188061C (nl) | 1992-03-16 |
DE2820913C2 (fr) | 1987-10-15 |
FR2391563B1 (fr) | 1984-04-06 |
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