IT1235693B - Transistore ad effetto di campo superficiale con regione di source e/o di drain scavate per dispositivi ulsi. - Google Patents

Transistore ad effetto di campo superficiale con regione di source e/o di drain scavate per dispositivi ulsi.

Info

Publication number
IT1235693B
IT1235693B IT8983621A IT8362189A IT1235693B IT 1235693 B IT1235693 B IT 1235693B IT 8983621 A IT8983621 A IT 8983621A IT 8362189 A IT8362189 A IT 8362189A IT 1235693 B IT1235693 B IT 1235693B
Authority
IT
Italy
Prior art keywords
excavated
drain
field effect
effect transistor
source region
Prior art date
Application number
IT8983621A
Other languages
English (en)
Other versions
IT8983621A0 (it
Inventor
Fabio Gualandris
Aldo Maggis
Original Assignee
Sgs Thomson Microelectronics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sgs Thomson Microelectronics filed Critical Sgs Thomson Microelectronics
Priority to IT8983621A priority Critical patent/IT1235693B/it
Publication of IT8983621A0 publication Critical patent/IT8983621A0/it
Priority to EP90830177A priority patent/EP0401174A1/en
Priority to JP2116686A priority patent/JPH02304982A/ja
Priority to US07/518,070 priority patent/US5041885A/en
Application granted granted Critical
Publication of IT1235693B publication Critical patent/IT1235693B/it
Priority to US08/575,846 priority patent/USRE35827E/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/90—MOSFET type gate sidewall insulating spacer

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
IT8983621A 1989-05-02 1989-05-02 Transistore ad effetto di campo superficiale con regione di source e/o di drain scavate per dispositivi ulsi. IT1235693B (it)

Priority Applications (5)

Application Number Priority Date Filing Date Title
IT8983621A IT1235693B (it) 1989-05-02 1989-05-02 Transistore ad effetto di campo superficiale con regione di source e/o di drain scavate per dispositivi ulsi.
EP90830177A EP0401174A1 (en) 1989-05-02 1990-04-24 Surface field effect transistor with depressed source and/or drain areas for ulsi integrated devices
JP2116686A JPH02304982A (ja) 1989-05-02 1990-05-02 超大規模集積デバイス用の下降したソース及び／又はドレーンエリアを有する表面電界効果トランジスタ
US07/518,070 US5041885A (en) 1989-05-02 1990-05-02 Surface field effect transistor with depressed source and/or drain areas for ULSI integrated devices
US08/575,846 USRE35827E (en) 1989-05-02 1995-12-21 Surface field effect transistor with depressed source and/or drain areas for ULSI integrated devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8983621A IT1235693B (it) 1989-05-02 1989-05-02 Transistore ad effetto di campo superficiale con regione di source e/o di drain scavate per dispositivi ulsi.

Publications (2)

Publication Number Publication Date
IT8983621A0 IT8983621A0 (it) 1989-05-02
IT1235693B true IT1235693B (it) 1992-09-21

Family

ID=11323262

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8983621A IT1235693B (it) 1989-05-02 1989-05-02 Transistore ad effetto di campo superficiale con regione di source e/o di drain scavate per dispositivi ulsi.

Country Status (4)

Country Link
US (1) US5041885A (it)
EP (1) EP0401174A1 (it)
JP (1) JPH02304982A (it)
IT (1) IT1235693B (it)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0427414U (it) * 1990-06-27 1992-03-04
JP2657588B2 (ja) * 1991-01-11 1997-09-24 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
KR940004269B1 (ko) * 1991-03-13 1994-05-19 금성일렉트론 주식회사 모오스 fet 제조방법 및 구조
JPH0629524A (ja) * 1992-04-14 1994-02-04 Toshiba Corp 半導体装置の製造方法
JP3318384B2 (ja) * 1993-02-05 2002-08-26 株式会社半導体エネルギー研究所 薄膜トランジスタ及びその作製方法
US6683350B1 (en) * 1993-02-05 2004-01-27 Semiconductor Energy Laboratory Co., Ltd. Transistor and method for manufacturing the same
EP0637074A3 (en) * 1993-07-30 1995-06-21 Sgs Thomson Microelectronics Process for the production of active and isolated areas by split imaging.
US5382534A (en) * 1994-06-06 1995-01-17 United Microelectronics Corporation Field effect transistor with recessed buried source and drain regions
US5710450A (en) 1994-12-23 1998-01-20 Intel Corporation Transistor with ultra shallow tip and method of fabrication
US5814861A (en) * 1996-10-17 1998-09-29 Mitsubishi Semiconductor America, Inc. Symmetrical vertical lightly doped drain transistor and method of forming the same
US5834810A (en) * 1996-10-17 1998-11-10 Mitsubishi Semiconductor America, Inc. Asymmetrical vertical lightly doped drain transistor and method of forming the same
US7391087B2 (en) * 1999-12-30 2008-06-24 Intel Corporation MOS transistor structure and method of fabrication
JP2004111746A (ja) * 2002-09-19 2004-04-08 Fujitsu Ltd 半導体装置及びその製造方法
US7301193B2 (en) 2004-01-22 2007-11-27 Spansion Llc Structure and method for low Vss resistance and reduced DIBL in a floating gate memory cell
US6921691B1 (en) * 2004-03-18 2005-07-26 Infineon Technologies Ag Transistor with dopant-bearing metal in source and drain
JP2005277024A (ja) * 2004-03-24 2005-10-06 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
US8399934B2 (en) * 2004-12-20 2013-03-19 Infineon Technologies Ag Transistor device
US7592678B2 (en) * 2004-06-17 2009-09-22 Infineon Technologies Ag CMOS transistors with dual high-k gate dielectric and methods of manufacture thereof
US8178902B2 (en) 2004-06-17 2012-05-15 Infineon Technologies Ag CMOS transistor with dual high-k gate dielectric and method of manufacture thereof
US7344934B2 (en) * 2004-12-06 2008-03-18 Infineon Technologies Ag CMOS transistor and method of manufacture thereof
US7160781B2 (en) * 2005-03-21 2007-01-09 Infineon Technologies Ag Transistor device and methods of manufacture thereof
US7361538B2 (en) * 2005-04-14 2008-04-22 Infineon Technologies Ag Transistors and methods of manufacture thereof
US20060286757A1 (en) * 2005-06-15 2006-12-21 John Power Semiconductor product and method for forming a semiconductor product
US20070052036A1 (en) * 2005-09-02 2007-03-08 Hongfa Luan Transistors and methods of manufacture thereof
US8188551B2 (en) 2005-09-30 2012-05-29 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
US7462538B2 (en) * 2005-11-15 2008-12-09 Infineon Technologies Ag Methods of manufacturing multiple gate CMOS transistors having different gate dielectric materials
US7495290B2 (en) * 2005-12-14 2009-02-24 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
US7510943B2 (en) * 2005-12-16 2009-03-31 Infineon Technologies Ag Semiconductor devices and methods of manufacture thereof
US20080050898A1 (en) * 2006-08-23 2008-02-28 Hongfa Luan Semiconductor devices and methods of manufacture thereof
JP5104373B2 (ja) * 2008-02-14 2012-12-19 日本ゼオン株式会社 位相差板の製造方法
US7995384B2 (en) 2008-08-15 2011-08-09 Macronix International Co., Ltd. Electrically isolated gated diode nonvolatile memory
US9853148B2 (en) 2016-02-02 2017-12-26 Taiwan Semiconductor Manufacturing Company Ltd. Power MOSFETs and methods for manufacturing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5362985A (en) * 1976-11-18 1978-06-05 Toshiba Corp Mis type field effect transistor and its production
US4217599A (en) * 1977-12-21 1980-08-12 Tektronix, Inc. Narrow channel MOS devices and method of manufacturing
JPS57133675A (en) * 1981-02-12 1982-08-18 Pioneer Electronic Corp Analog switch device
US4625388A (en) * 1982-04-26 1986-12-02 Acrian, Inc. Method of fabricating mesa MOSFET using overhang mask and resulting structure
US4935789A (en) * 1985-02-19 1990-06-19 Eaton Corporation Buried channel FET with lateral growth over amorphous region
US4907048A (en) * 1987-11-23 1990-03-06 Xerox Corporation Double implanted LDD transistor self-aligned with gate
US4985744A (en) * 1988-01-29 1991-01-15 Texas Instruments Incorporated Method for forming a recessed contact bipolar transistor and field effect transistor
US4949136A (en) * 1988-06-09 1990-08-14 University Of Connecticut Submicron lightly doped field effect transistors

Also Published As

Publication number Publication date
IT8983621A0 (it) 1989-05-02
US5041885A (en) 1991-08-20
JPH02304982A (ja) 1990-12-18
EP0401174A1 (en) 1990-12-05

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