FR1511783A - Transistor à métal-isolant-semi-conducteur, comportant des électrodes de commandemultiples - Google Patents

Transistor à métal-isolant-semi-conducteur, comportant des électrodes de commandemultiples

Info

Publication number
FR1511783A
FR1511783A FR94147A FR94147A FR1511783A FR 1511783 A FR1511783 A FR 1511783A FR 94147 A FR94147 A FR 94147A FR 94147 A FR94147 A FR 94147A FR 1511783 A FR1511783 A FR 1511783A
Authority
FR
France
Prior art keywords
insulator
metal
control electrodes
multiple control
semiconductor transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR94147A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Space Systems Loral LLC
Original Assignee
Philco Ford Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philco Ford Corp filed Critical Philco Ford Corp
Application granted granted Critical
Publication of FR1511783A publication Critical patent/FR1511783A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Amplifiers (AREA)
FR94147A 1966-04-15 1967-02-08 Transistor à métal-isolant-semi-conducteur, comportant des électrodes de commandemultiples Expired FR1511783A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54294766A 1966-04-15 1966-04-15
US45294766A 1966-04-15 1966-04-15

Publications (1)

Publication Number Publication Date
FR1511783A true FR1511783A (fr) 1968-02-02

Family

ID=27036950

Family Applications (1)

Application Number Title Priority Date Filing Date
FR94147A Expired FR1511783A (fr) 1966-04-15 1967-02-08 Transistor à métal-isolant-semi-conducteur, comportant des électrodes de commandemultiples

Country Status (3)

Country Link
DE (1) DE1614335A1 (fr)
FR (1) FR1511783A (fr)
GB (1) GB1153252A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2396414A1 (fr) * 1977-06-30 1979-01-26 Siemens Ag Transistor a effet de champ a canal de longueur extremement courte

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2729658A1 (de) * 1977-06-30 1979-01-11 Siemens Ag Feldeffekttransistor mit extrem kurzer kanallaenge
DE2729657A1 (de) * 1977-06-30 1979-01-11 Siemens Ag Feldeffekttransistor mit extrem kurzer kanallaenge

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2396414A1 (fr) * 1977-06-30 1979-01-26 Siemens Ag Transistor a effet de champ a canal de longueur extremement courte

Also Published As

Publication number Publication date
GB1153252A (en) 1969-05-29
DE1614335A1 (de) 1970-07-02

Similar Documents

Publication Publication Date Title
FR1450698A (fr) Electrode
NL163353C (nl) Elektrode.
NL154625B (nl) Veldeffecttransistor met twee geisoleerde stuurelektroden.
NL154811B (nl) Draaibedieningsinrichting.
NL156542B (nl) Veldeffecttransistor met geisoleerde stuurelektrode.
CH422948A (fr) Contact ou électrode
NL150950B (nl) Veldeffecttransistor met geisoleerde stuurelektrode.
NL158657B (nl) Veldeffecttransistor met geisoleerde stuurelektrode.
CH433817A (de) Bezugselektrode
DK128069C (da) Porcelænsisolator.
DK117441B (da) Felteffektransistor med isoleret styreelektrode.
NL151632B (nl) Plafondelektrode.
FR1434067A (fr) Interrupteurs électriques à double action
FR1511783A (fr) Transistor à métal-isolant-semi-conducteur, comportant des électrodes de commandemultiples
FI46213C (fi) Kosketinelementti.
FR1503217A (fr) Amplificateur comportant deux canaux séparés
NL146020B (nl) Hoogfrequent-verwarmingsinrichting.
FR1387956A (fr) électrode à arc
NL161924B (nl) Veldeffecttransistor met ten minste twee geisoleerde stuurelektroden.
DK116550B (da) Elektrode.
FR1503948A (fr) Limiteur de courant à transistor
FR1471015A (fr) Four à rigole
FR1503285A (fr) Commutateurs semi-conducteurs à électrodes de commande
DK109567C (da) Elektrisk styret omkoblingsapparat.
DK124359B (da) Referenceelektrode.