FR1511783A - Transistor à métal-isolant-semi-conducteur, comportant des électrodes de commandemultiples - Google Patents
Transistor à métal-isolant-semi-conducteur, comportant des électrodes de commandemultiplesInfo
- Publication number
- FR1511783A FR1511783A FR94147A FR94147A FR1511783A FR 1511783 A FR1511783 A FR 1511783A FR 94147 A FR94147 A FR 94147A FR 94147 A FR94147 A FR 94147A FR 1511783 A FR1511783 A FR 1511783A
- Authority
- FR
- France
- Prior art keywords
- insulator
- metal
- control electrodes
- multiple control
- semiconductor transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Amplifiers (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US54294766A | 1966-04-15 | 1966-04-15 | |
US45294766A | 1966-04-15 | 1966-04-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1511783A true FR1511783A (fr) | 1968-02-02 |
Family
ID=27036950
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR94147A Expired FR1511783A (fr) | 1966-04-15 | 1967-02-08 | Transistor à métal-isolant-semi-conducteur, comportant des électrodes de commandemultiples |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE1614335A1 (fr) |
FR (1) | FR1511783A (fr) |
GB (1) | GB1153252A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2396414A1 (fr) * | 1977-06-30 | 1979-01-26 | Siemens Ag | Transistor a effet de champ a canal de longueur extremement courte |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2729658A1 (de) * | 1977-06-30 | 1979-01-11 | Siemens Ag | Feldeffekttransistor mit extrem kurzer kanallaenge |
DE2729657A1 (de) * | 1977-06-30 | 1979-01-11 | Siemens Ag | Feldeffekttransistor mit extrem kurzer kanallaenge |
-
1967
- 1967-02-08 FR FR94147A patent/FR1511783A/fr not_active Expired
- 1967-04-14 DE DE19671614335 patent/DE1614335A1/de active Pending
- 1967-04-17 GB GB1762067A patent/GB1153252A/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2396414A1 (fr) * | 1977-06-30 | 1979-01-26 | Siemens Ag | Transistor a effet de champ a canal de longueur extremement courte |
Also Published As
Publication number | Publication date |
---|---|
DE1614335A1 (de) | 1970-07-02 |
GB1153252A (en) | 1969-05-29 |
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