GB1153252A - Improvements in and relating to Semiconductor Devices - Google Patents

Improvements in and relating to Semiconductor Devices

Info

Publication number
GB1153252A
GB1153252A GB1762067A GB1762067A GB1153252A GB 1153252 A GB1153252 A GB 1153252A GB 1762067 A GB1762067 A GB 1762067A GB 1762067 A GB1762067 A GB 1762067A GB 1153252 A GB1153252 A GB 1153252A
Authority
GB
United Kingdom
Prior art keywords
screen
transistor
april
screens
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1762067A
Inventor
George Luther Schnable
Earl Stouffer Schlegel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Space Systems Loral LLC
Original Assignee
Philco Ford Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philco Ford Corp filed Critical Philco Ford Corp
Publication of GB1153252A publication Critical patent/GB1153252A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Amplifiers (AREA)

Abstract

1,153,252. Field effect transistor amplifiers and frequency changers. PHILCO-FORD CORP. 17 April, 1967 [15 April, 1966], No. 17620/67. Heading H3T. [Also in Division H1] A field effect transistor, Fig. 2 (not shownbut see Division H1) consists of a source 12 and drain 14 bridged by a channel under an insulating layer, the layer being surmounted by a plurality of gate electrodes one of which may serve as a control electrode and the other or others as a screen or screens. Fig. 5 shows a tetrode amplifier employing such a device 60 having one screen, 20, which is capacitively connected to earth while the input signal 64 is applied to the control electrode 18. Fig. 10 (not shown) depicts an otherwise identical amplifier in which the transistor has two screen electrodes. The Specification indicates that the screens may have their respective potentials controlled by other circuitry, e.g. to provide automatic gain control, and also mentions the possibility of applying signals of different frequency to the various gate electrodes for use of the transistor as a frequency changer. Both enhancement mode and depletion mode operation are envisaged. Reference has been directed by the Comptroller to Specification 1,037,850.
GB1762067A 1966-04-15 1967-04-17 Improvements in and relating to Semiconductor Devices Expired GB1153252A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US54294766A 1966-04-15 1966-04-15
US45294766A 1966-04-15 1966-04-15

Publications (1)

Publication Number Publication Date
GB1153252A true GB1153252A (en) 1969-05-29

Family

ID=27036950

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1762067A Expired GB1153252A (en) 1966-04-15 1967-04-17 Improvements in and relating to Semiconductor Devices

Country Status (3)

Country Link
DE (1) DE1614335A1 (en)
FR (1) FR1511783A (en)
GB (1) GB1153252A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2729657A1 (en) * 1977-06-30 1979-01-11 Siemens Ag FIELD EFFECT TRANSISTOR WITH EXTREMELY SHORT CHANNEL LENGTH
DE2729658A1 (en) * 1977-06-30 1979-01-11 Siemens Ag FIELD EFFECT TRANSISTOR WITH EXTREMELY SHORT CHANNEL LENGTH
DE2729656A1 (en) * 1977-06-30 1979-01-11 Siemens Ag FIELD EFFECT TRANSISTOR WITH EXTREMELY SHORT CHANNEL LENGTH

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2729657A1 (en) * 1977-06-30 1979-01-11 Siemens Ag FIELD EFFECT TRANSISTOR WITH EXTREMELY SHORT CHANNEL LENGTH
DE2729658A1 (en) * 1977-06-30 1979-01-11 Siemens Ag FIELD EFFECT TRANSISTOR WITH EXTREMELY SHORT CHANNEL LENGTH
DE2729656A1 (en) * 1977-06-30 1979-01-11 Siemens Ag FIELD EFFECT TRANSISTOR WITH EXTREMELY SHORT CHANNEL LENGTH

Also Published As

Publication number Publication date
FR1511783A (en) 1968-02-02
DE1614335A1 (en) 1970-07-02

Similar Documents

Publication Publication Date Title
GB1393983A (en) Field-effect transistor radio frequency miser
ES426652A1 (en) Complementary field-effect transistor amplifier
GB1152394A (en) Amplifier
GB1273928A (en) Protective circuit for a field effect transistor
SE316834B (en)
GB1173150A (en) Improvements in Insulated Gate Field Effect Transistors
GB1075085A (en) Improvements in or relating to semiconductor devices
GB997160A (en) An operational amplifier with switched inputs
GB1153252A (en) Improvements in and relating to Semiconductor Devices
GB1378148A (en) Insulated gate field effect transistor and transistor arrangement
SE301663B (en)
GB1030124A (en) Electrical circuits including a field-effect transistor
GB1043124A (en) Electrical circuits including field-effect transistors
US3588635A (en) Integrated circuit
ES361236A1 (en) Gain control biasing circuits for field-effect transistors
GB1419542A (en) Protective arrangement for field effect transistors
GB1121444A (en) Circuitry for static bandwidth control over a wide dynamic range
GB1076614A (en) Integrated electrical circuits
ES330953A1 (en) A semiconductor device of field effect type. (Machine-translation by Google Translate, not legally binding)
GB1041385A (en) Improvements in field-effect transistor devices
GB1327298A (en) Insulated gate-field-effect transistor with variable gain
GB1194946A (en) Semiconductor Amplifier
GB1363190A (en) Semiconductor memory device
SU681559A1 (en) Electronic switching circuit
GB1115142A (en) Improvements in or relating to ele ctrically adjustable voltage dividers

Legal Events

Date Code Title Description
PS Patent sealed
PLE Entries relating assignments, transmissions, licences in the register of patents
PLNP Patent lapsed through nonpayment of renewal fees