FR2379168A1 - Transistor a effet de champ mis possedant une courte longueur de canal - Google Patents

Transistor a effet de champ mis possedant une courte longueur de canal

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Publication number
FR2379168A1
FR2379168A1 FR7802331A FR7802331A FR2379168A1 FR 2379168 A1 FR2379168 A1 FR 2379168A1 FR 7802331 A FR7802331 A FR 7802331A FR 7802331 A FR7802331 A FR 7802331A FR 2379168 A1 FR2379168 A1 FR 2379168A1
Authority
FR
France
Prior art keywords
field effect
effect transistor
channel length
short channel
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7802331A
Other languages
English (en)
Other versions
FR2379168B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2379168A1 publication Critical patent/FR2379168A1/fr
Application granted granted Critical
Publication of FR2379168B1 publication Critical patent/FR2379168B1/fr
Granted legal-status Critical Current

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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/3105—After-treatment
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
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    • H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
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    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

L'invention concerne un transistor à effet de champ MIS possédant une courte longueur de canal. Ce transistor à effet de champ MIS comporte une région de source 6, une région de drain 7 et une région de canal 12 disposées dans un substrat semi-conducteur 1 et recouverte partiellement par un couche isolante 2, ainsi qu'une autre région dopée 13 située dans le substrat semi-conducteur au-dessus de la région de source 6 et contenant des particules de substance dopante implantées. Application notamment aux transistors à effet de champ MIS à performances accrues de commutation et en haute fréquence
FR7802331A 1977-01-31 1978-01-27 Transistor a effet de champ mis possedant une courte longueur de canal Granted FR2379168A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2703877A DE2703877C2 (de) 1977-01-31 1977-01-31 MIS-Transistor von kurzer Kanallänge und Verfahren zu seiner Herstellung

Publications (2)

Publication Number Publication Date
FR2379168A1 true FR2379168A1 (fr) 1978-08-25
FR2379168B1 FR2379168B1 (fr) 1984-01-27

Family

ID=5999963

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7802331A Granted FR2379168A1 (fr) 1977-01-31 1978-01-27 Transistor a effet de champ mis possedant une courte longueur de canal

Country Status (5)

Country Link
US (1) US4190850A (fr)
JP (1) JPS5396774A (fr)
DE (1) DE2703877C2 (fr)
FR (1) FR2379168A1 (fr)
GB (1) GB1587773A (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2445618A1 (fr) * 1978-12-15 1980-07-25 Raytheon Co Composant semi-conducteur et son procede de fabrication
FR2452785A1 (fr) * 1979-03-29 1980-10-24 Siemens Ag Procede pour fabriquer un transistor a effet de champ mis possedant un canal d'une longueur reglable extremement courte
EP0021218A1 (fr) * 1979-06-29 1981-01-07 Siemens Aktiengesellschaft Cellule à mémoire semiconductrice dynamique et procédé pour sa fabrication
EP0029554A1 (fr) * 1979-11-23 1981-06-03 Siemens Aktiengesellschaft Procédé de fabrication de transistors de mémoire de type MNOS à canal très court par la technique de l'électrode de porte en silicium
FR2484707A1 (fr) * 1980-06-16 1981-12-18 Philips Corp Transistor lateral a effet de cham
EP0083447A2 (fr) * 1981-12-30 1983-07-13 Thomson Components-Mostek Corporation Dispositif à canal court formé par triple diffusion

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2754066A1 (de) * 1977-12-05 1979-06-13 Siemens Ag Herstellung einer integrierten schaltung mit abgestuften schichten aus isolations- und elektrodenmaterial
DE2754549A1 (de) * 1977-12-07 1979-06-13 Siemens Ag Optoelektronischer sensor nach dem prinzip der ladungsinjektion
DE2802838A1 (de) * 1978-01-23 1979-08-16 Siemens Ag Mis-feldeffekttransistor mit kurzer kanallaenge
US4705759B1 (en) * 1978-10-13 1995-02-14 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor
US4378629A (en) * 1979-08-10 1983-04-05 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor, fabrication method
DE3017313A1 (de) * 1980-05-06 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung
US4404576A (en) * 1980-06-09 1983-09-13 Xerox Corporation All implanted MOS transistor
DE3040775C2 (de) * 1980-10-29 1987-01-15 Siemens AG, 1000 Berlin und 8000 München Steuerbares MIS-Halbleiterbauelement
US4574208A (en) * 1982-06-21 1986-03-04 Eaton Corporation Raised split gate EFET and circuitry
US4672423A (en) * 1982-09-30 1987-06-09 International Business Machines Corporation Voltage controlled resonant transmission semiconductor device
DE3301648A1 (de) * 1983-01-19 1984-07-19 Siemens AG, 1000 Berlin und 8000 München Misfet mit eingangsverstaerker
US4602965A (en) * 1984-03-13 1986-07-29 Communications Satellite Corporation Method of making FETs in GaAs by dual species implantation of silicon and boron
US4713681A (en) * 1985-05-31 1987-12-15 Harris Corporation Structure for high breakdown PN diode with relatively high surface doping
US4818715A (en) * 1987-07-09 1989-04-04 Industrial Technology Research Institute Method of fabricating a LDDFET with self-aligned silicide
US5550069A (en) * 1990-06-23 1996-08-27 El Mos Electronik In Mos Technologie Gmbh Method for producing a PMOS transistor
IT1250233B (it) * 1991-11-29 1995-04-03 St Microelectronics Srl Procedimento per la fabbricazione di circuiti integrati in tecnologia mos.
JP3435173B2 (ja) * 1992-07-10 2003-08-11 株式会社日立製作所 半導体装置
GB9313843D0 (en) * 1993-07-05 1993-08-18 Philips Electronics Uk Ltd A semiconductor device comprising an insulated gate field effect transistor
US5374575A (en) * 1993-11-23 1994-12-20 Goldstar Electron Co., Ltd. Method for fabricating MOS transistor
DE69329999T2 (de) * 1993-12-29 2001-09-13 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Verfahren zur Herstellung integrierter Schaltungen, insbesondere intelligenter Leistungsanordnungen
DE69434937D1 (de) * 1994-06-23 2007-04-19 St Microelectronics Srl Verfahren zur Herstellung von Leistungsbauteilen in MOS-Technologie
EP0689238B1 (fr) * 1994-06-23 2002-02-20 STMicroelectronics S.r.l. Procédé de manufacture d'un dispositif de puissance en technologie MOS
US5817546A (en) * 1994-06-23 1998-10-06 Stmicroelectronics S.R.L. Process of making a MOS-technology power device
DE69429915D1 (de) * 1994-07-04 2002-03-28 St Microelectronics Srl Verfahren zur Herstellung von Leistungsbauteilen hoher Dichte in MOS-Technologie
JP2661561B2 (ja) * 1994-10-27 1997-10-08 日本電気株式会社 薄膜トランジスタおよびその製造方法
JPH08316426A (ja) * 1995-05-16 1996-11-29 Nittetsu Semiconductor Kk Ｍｏｓ型半導体装置およびその製造方法
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
EP1035566A3 (fr) * 1999-03-03 2000-10-04 Infineon Technologies North America Corp. Méthode de formation d'une couche dopée profonde avec des éléments de connection dans un composant semiconducteur
JP4198006B2 (ja) * 2003-07-25 2008-12-17 株式会社リコー 半導体装置の製造方法
KR100552809B1 (ko) * 2003-12-24 2006-02-22 동부아남반도체 주식회사 드레인-소스 브레이크다운 전압을 개선한 반도체 소자 및그 제조 방법
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FR2452785A1 (fr) * 1979-03-29 1980-10-24 Siemens Ag Procede pour fabriquer un transistor a effet de champ mis possedant un canal d'une longueur reglable extremement courte
EP0021218A1 (fr) * 1979-06-29 1981-01-07 Siemens Aktiengesellschaft Cellule à mémoire semiconductrice dynamique et procédé pour sa fabrication
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US4190850A (en) 1980-02-26
GB1587773A (en) 1981-04-08
JPH0130312B2 (fr) 1989-06-19
DE2703877C2 (de) 1982-06-03
JPS5396774A (en) 1978-08-24
DE2703877A1 (de) 1978-08-03
FR2379168B1 (fr) 1984-01-27

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