FR2379168A1 - Transistor a effet de champ mis possedant une courte longueur de canal - Google Patents
Transistor a effet de champ mis possedant une courte longueur de canalInfo
- Publication number
- FR2379168A1 FR2379168A1 FR7802331A FR7802331A FR2379168A1 FR 2379168 A1 FR2379168 A1 FR 2379168A1 FR 7802331 A FR7802331 A FR 7802331A FR 7802331 A FR7802331 A FR 7802331A FR 2379168 A1 FR2379168 A1 FR 2379168A1
- Authority
- FR
- France
- Prior art keywords
- field effect
- effect transistor
- channel length
- short channel
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000002245 particle Substances 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
- H01L29/78657—SOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
L'invention concerne un transistor à effet de champ MIS possédant une courte longueur de canal. Ce transistor à effet de champ MIS comporte une région de source 6, une région de drain 7 et une région de canal 12 disposées dans un substrat semi-conducteur 1 et recouverte partiellement par un couche isolante 2, ainsi qu'une autre région dopée 13 située dans le substrat semi-conducteur au-dessus de la région de source 6 et contenant des particules de substance dopante implantées. Application notamment aux transistors à effet de champ MIS à performances accrues de commutation et en haute fréquence
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2703877A DE2703877C2 (de) | 1977-01-31 | 1977-01-31 | MIS-Transistor von kurzer Kanallänge und Verfahren zu seiner Herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2379168A1 true FR2379168A1 (fr) | 1978-08-25 |
FR2379168B1 FR2379168B1 (fr) | 1984-01-27 |
Family
ID=5999963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7802331A Granted FR2379168A1 (fr) | 1977-01-31 | 1978-01-27 | Transistor a effet de champ mis possedant une courte longueur de canal |
Country Status (5)
Country | Link |
---|---|
US (1) | US4190850A (fr) |
JP (1) | JPS5396774A (fr) |
DE (1) | DE2703877C2 (fr) |
FR (1) | FR2379168A1 (fr) |
GB (1) | GB1587773A (fr) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2445618A1 (fr) * | 1978-12-15 | 1980-07-25 | Raytheon Co | Composant semi-conducteur et son procede de fabrication |
FR2452785A1 (fr) * | 1979-03-29 | 1980-10-24 | Siemens Ag | Procede pour fabriquer un transistor a effet de champ mis possedant un canal d'une longueur reglable extremement courte |
EP0021218A1 (fr) * | 1979-06-29 | 1981-01-07 | Siemens Aktiengesellschaft | Cellule à mémoire semiconductrice dynamique et procédé pour sa fabrication |
EP0029554A1 (fr) * | 1979-11-23 | 1981-06-03 | Siemens Aktiengesellschaft | Procédé de fabrication de transistors de mémoire de type MNOS à canal très court par la technique de l'électrode de porte en silicium |
FR2484707A1 (fr) * | 1980-06-16 | 1981-12-18 | Philips Corp | Transistor lateral a effet de cham |
EP0083447A2 (fr) * | 1981-12-30 | 1983-07-13 | Thomson Components-Mostek Corporation | Dispositif à canal court formé par triple diffusion |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2754066A1 (de) * | 1977-12-05 | 1979-06-13 | Siemens Ag | Herstellung einer integrierten schaltung mit abgestuften schichten aus isolations- und elektrodenmaterial |
DE2754549A1 (de) * | 1977-12-07 | 1979-06-13 | Siemens Ag | Optoelektronischer sensor nach dem prinzip der ladungsinjektion |
DE2802838A1 (de) * | 1978-01-23 | 1979-08-16 | Siemens Ag | Mis-feldeffekttransistor mit kurzer kanallaenge |
US5191396B1 (en) * | 1978-10-13 | 1995-12-26 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
US4705759B1 (en) * | 1978-10-13 | 1995-02-14 | Int Rectifier Corp | High power mosfet with low on-resistance and high breakdown voltage |
JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
US4378629A (en) * | 1979-08-10 | 1983-04-05 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor, fabrication method |
US5298787A (en) * | 1979-08-10 | 1994-03-29 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor |
DE3017313A1 (de) * | 1980-05-06 | 1981-11-12 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung |
US4404576A (en) * | 1980-06-09 | 1983-09-13 | Xerox Corporation | All implanted MOS transistor |
DE3040775C2 (de) * | 1980-10-29 | 1987-01-15 | Siemens AG, 1000 Berlin und 8000 München | Steuerbares MIS-Halbleiterbauelement |
US4574208A (en) * | 1982-06-21 | 1986-03-04 | Eaton Corporation | Raised split gate EFET and circuitry |
US4672423A (en) * | 1982-09-30 | 1987-06-09 | International Business Machines Corporation | Voltage controlled resonant transmission semiconductor device |
DE3301648A1 (de) * | 1983-01-19 | 1984-07-19 | Siemens AG, 1000 Berlin und 8000 München | Misfet mit eingangsverstaerker |
US4602965A (en) * | 1984-03-13 | 1986-07-29 | Communications Satellite Corporation | Method of making FETs in GaAs by dual species implantation of silicon and boron |
US4713681A (en) * | 1985-05-31 | 1987-12-15 | Harris Corporation | Structure for high breakdown PN diode with relatively high surface doping |
US4818715A (en) * | 1987-07-09 | 1989-04-04 | Industrial Technology Research Institute | Method of fabricating a LDDFET with self-aligned silicide |
US5550069A (en) * | 1990-06-23 | 1996-08-27 | El Mos Electronik In Mos Technologie Gmbh | Method for producing a PMOS transistor |
IT1250233B (it) * | 1991-11-29 | 1995-04-03 | St Microelectronics Srl | Procedimento per la fabbricazione di circuiti integrati in tecnologia mos. |
JP3435173B2 (ja) * | 1992-07-10 | 2003-08-11 | 株式会社日立製作所 | 半導体装置 |
GB9313843D0 (en) * | 1993-07-05 | 1993-08-18 | Philips Electronics Uk Ltd | A semiconductor device comprising an insulated gate field effect transistor |
US5374575A (en) * | 1993-11-23 | 1994-12-20 | Goldstar Electron Co., Ltd. | Method for fabricating MOS transistor |
DE69329999T2 (de) * | 1993-12-29 | 2001-09-13 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | Verfahren zur Herstellung integrierter Schaltungen, insbesondere intelligenter Leistungsanordnungen |
US5817546A (en) * | 1994-06-23 | 1998-10-06 | Stmicroelectronics S.R.L. | Process of making a MOS-technology power device |
EP0689239B1 (fr) * | 1994-06-23 | 2007-03-07 | STMicroelectronics S.r.l. | Procédé de manufacture des dispositifs de puissance en technologie MOS |
EP0689238B1 (fr) * | 1994-06-23 | 2002-02-20 | STMicroelectronics S.r.l. | Procédé de manufacture d'un dispositif de puissance en technologie MOS |
EP0696054B1 (fr) | 1994-07-04 | 2002-02-20 | STMicroelectronics S.r.l. | Procédé de manufacture des dispositifs de puissance à haute densité en technology MOS |
JP2661561B2 (ja) * | 1994-10-27 | 1997-10-08 | 日本電気株式会社 | 薄膜トランジスタおよびその製造方法 |
JPH08316426A (ja) * | 1995-05-16 | 1996-11-29 | Nittetsu Semiconductor Kk | Mos型半導体装置およびその製造方法 |
US5869371A (en) * | 1995-06-07 | 1999-02-09 | Stmicroelectronics, Inc. | Structure and process for reducing the on-resistance of mos-gated power devices |
EP1035566A3 (fr) * | 1999-03-03 | 2000-10-04 | Infineon Technologies North America Corp. | Méthode de formation d'une couche dopée profonde avec des éléments de connection dans un composant semiconducteur |
JP4198006B2 (ja) * | 2003-07-25 | 2008-12-17 | 株式会社リコー | 半導体装置の製造方法 |
KR100552809B1 (ko) * | 2003-12-24 | 2006-02-22 | 동부아남반도체 주식회사 | 드레인-소스 브레이크다운 전압을 개선한 반도체 소자 및그 제조 방법 |
US20060255412A1 (en) * | 2005-05-13 | 2006-11-16 | Nirmal Ramaswamy | Enhanced access devices using selective epitaxial silicon over the channel region during the formation of a semiconductor device and systems including same |
EP4053916B1 (fr) * | 2021-03-01 | 2024-07-03 | Hitachi Energy Ltd | Dispositif de semi-conducteur d'alimentation |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3846822A (en) * | 1973-10-05 | 1974-11-05 | Bell Telephone Labor Inc | Methods for making field effect transistors |
US4001048A (en) * | 1974-06-26 | 1977-01-04 | Signetics Corporation | Method of making metal oxide semiconductor structures using ion implantation |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6501946A (fr) * | 1965-02-17 | 1966-08-18 | ||
GB1261723A (en) * | 1968-03-11 | 1972-01-26 | Associated Semiconductor Mft | Improvements in and relating to semiconductor devices |
GB1316555A (fr) * | 1969-08-12 | 1973-05-09 | ||
JPS4831514B1 (fr) * | 1969-09-18 | 1973-09-29 | ||
US3604990A (en) * | 1970-04-01 | 1971-09-14 | Gen Electric | Smoothly changing voltage-variable capacitor having an extendible pn junction region |
JPS53673B2 (fr) * | 1971-11-04 | 1978-01-11 | ||
DE2460967A1 (de) * | 1974-12-21 | 1976-07-01 | Philips Patentverwaltung | Halbleiterbauelement mit einer mos-transistorstruktur |
FR2325194A1 (fr) * | 1975-09-16 | 1977-04-15 | Ibm | Dispositif de pompage de charge pour semi-conducteur et son procede de fabrication |
JPS6042626B2 (ja) * | 1976-05-18 | 1985-09-24 | 松下電器産業株式会社 | 半導体装置の製造方法 |
-
1977
- 1977-01-31 DE DE2703877A patent/DE2703877C2/de not_active Expired
-
1978
- 1978-01-17 US US05/870,216 patent/US4190850A/en not_active Expired - Lifetime
- 1978-01-27 FR FR7802331A patent/FR2379168A1/fr active Granted
- 1978-01-30 JP JP920178A patent/JPS5396774A/ja active Granted
- 1978-01-30 GB GB3619/78A patent/GB1587773A/en not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3846822A (en) * | 1973-10-05 | 1974-11-05 | Bell Telephone Labor Inc | Methods for making field effect transistors |
US4001048A (en) * | 1974-06-26 | 1977-01-04 | Signetics Corporation | Method of making metal oxide semiconductor structures using ion implantation |
Non-Patent Citations (1)
Title |
---|
EXBK/77 * |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2445618A1 (fr) * | 1978-12-15 | 1980-07-25 | Raytheon Co | Composant semi-conducteur et son procede de fabrication |
FR2452785A1 (fr) * | 1979-03-29 | 1980-10-24 | Siemens Ag | Procede pour fabriquer un transistor a effet de champ mis possedant un canal d'une longueur reglable extremement courte |
EP0021218A1 (fr) * | 1979-06-29 | 1981-01-07 | Siemens Aktiengesellschaft | Cellule à mémoire semiconductrice dynamique et procédé pour sa fabrication |
EP0029554A1 (fr) * | 1979-11-23 | 1981-06-03 | Siemens Aktiengesellschaft | Procédé de fabrication de transistors de mémoire de type MNOS à canal très court par la technique de l'électrode de porte en silicium |
FR2484707A1 (fr) * | 1980-06-16 | 1981-12-18 | Philips Corp | Transistor lateral a effet de cham |
EP0083447A2 (fr) * | 1981-12-30 | 1983-07-13 | Thomson Components-Mostek Corporation | Dispositif à canal court formé par triple diffusion |
EP0083447A3 (en) * | 1981-12-30 | 1985-03-13 | Mostek Corporation | Triple diffused short channel device structure |
Also Published As
Publication number | Publication date |
---|---|
DE2703877A1 (de) | 1978-08-03 |
FR2379168B1 (fr) | 1984-01-27 |
US4190850A (en) | 1980-02-26 |
JPH0130312B2 (fr) | 1989-06-19 |
GB1587773A (en) | 1981-04-08 |
JPS5396774A (en) | 1978-08-24 |
DE2703877C2 (de) | 1982-06-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2379168A1 (fr) | Transistor a effet de champ mis possedant une courte longueur de canal | |
GB1450171A (en) | Manufacture of mosfets | |
FR2381389A1 (fr) | Transistor a effet de champ mis pour des tensions source-drain elevees | |
JPS55148464A (en) | Mos semiconductor device and its manufacture | |
KR840001392A (ko) | 절연 게이트형 전계효과 트랜지스터(Insulated gate field effect transistor) | |
SE7906288L (sv) | Felteffekttransistor med isolerad styrelektrod | |
GB1316554A (en) | High frequency field-effect transistor | |
FR2396414A1 (fr) | Transistor a effet de champ a canal de longueur extremement courte | |
JPS5316581A (en) | Insulated gate type field effect transistor | |
FR2396415A1 (fr) | Transistor a effet de champ a canal de longueur extremement courte | |
JPH01232765A (ja) | 絶縁ゲート電界効果トランジスタ | |
FR2452785A1 (fr) | Procede pour fabriquer un transistor a effet de champ mis possedant un canal d'une longueur reglable extremement courte | |
FR2437700A1 (fr) | Transistor a effet de champ a commande reduite de la largeur du canal par le substrat | |
JPH0456473B2 (fr) | ||
JPS56110264A (en) | High withstand voltage mos transistor | |
FR2364542A1 (fr) | Transistor mis-fet a canal n realise suivant la technique a film de silicium epitaxial sur isolant (esfi) | |
SE9601178D0 (sv) | A field controlled semiconductor device of SiC and a method for production thereof | |
JPS6455867A (en) | Semiconductor device | |
JPS6448464A (en) | Semiconductor device | |
SU1828723A3 (ru) | Высоковольтный мдп-транзистор | |
JPS5723271A (en) | Field effect transistor | |
RU94037403A (ru) | Полевой транзистор типа металл-диэлектрик-полупроводник | |
KR970077366A (ko) | 고전압 트랜지스터의 제조방법 | |
JPH05291580A (ja) | 半導体装置およびその製法 | |
JPS61276252A (ja) | Cmos半導体装置 |