DE69429915D1 - Verfahren zur Herstellung von Leistungsbauteilen hoher Dichte in MOS-Technologie - Google Patents
Verfahren zur Herstellung von Leistungsbauteilen hoher Dichte in MOS-TechnologieInfo
- Publication number
- DE69429915D1 DE69429915D1 DE69429915T DE69429915T DE69429915D1 DE 69429915 D1 DE69429915 D1 DE 69429915D1 DE 69429915 T DE69429915 T DE 69429915T DE 69429915 T DE69429915 T DE 69429915T DE 69429915 D1 DE69429915 D1 DE 69429915D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- power components
- mos technology
- density power
- density
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66719—With a step of forming an insulating sidewall spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/126—Power FETs
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP94830331A EP0696054B1 (de) | 1994-07-04 | 1994-07-04 | Verfahren zur Herstellung von Leistungsbauteilen hoher Dichte in MOS-Technologie |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69429915D1 true DE69429915D1 (de) | 2002-03-28 |
Family
ID=8218487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69429915T Expired - Lifetime DE69429915D1 (de) | 1994-07-04 | 1994-07-04 | Verfahren zur Herstellung von Leistungsbauteilen hoher Dichte in MOS-Technologie |
Country Status (4)
Country | Link |
---|---|
US (2) | US5670392A (de) |
EP (1) | EP0696054B1 (de) |
JP (1) | JP3032138B2 (de) |
DE (1) | DE69429915D1 (de) |
Families Citing this family (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE69434268T2 (de) * | 1994-07-14 | 2006-01-12 | Stmicroelectronics S.R.L., Agrate Brianza | Intergrierte Struktur einer Hochgeschwindigkeits-MOS-Technologe-Leistungsvorrichtung und zugehöriges Herstellungsverfahren |
US5798554A (en) * | 1995-02-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | MOS-technology power device integrated structure and manufacturing process thereof |
DE69528961T2 (de) * | 1995-03-09 | 2003-09-04 | St Microelectronics Srl | Verfahren zur Herstellung von intergrierten Schaltungen mit Hochspannungs- und Niederspannungs-lateralen-DMOS-Leistungsbauelementen und nichtflüchtigen Speicherzellen |
US5741939A (en) * | 1995-03-22 | 1998-04-21 | Shell Oil Company | Process for the copolymerization of carbon monoxide with an olefinically unsaturated compound |
EP0768714B1 (de) * | 1995-10-09 | 2003-09-17 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno - CoRiMMe | Herstellungsverfahren für Leistungsanordnung mit Schutzring |
EP0772242B1 (de) * | 1995-10-30 | 2006-04-05 | STMicroelectronics S.r.l. | Leistungsbauteil in MOS-Technologie mit einer einzelnen kritischen Grösse |
EP0772241B1 (de) * | 1995-10-30 | 2004-06-09 | STMicroelectronics S.r.l. | Leistungsbauteil hoher Dichte in MOS-Technologie |
US6228719B1 (en) | 1995-11-06 | 2001-05-08 | Stmicroelectronics S.R.L. | MOS technology power device with low output resistance and low capacitance, and related manufacturing process |
EP0772244B1 (de) * | 1995-11-06 | 2000-03-22 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Leistungsbauelement in MOS-Technologie mit niedrigem Ausgangswiderstand und geringer Kapazität und dessen Herstellungsverfahren |
DE69518653T2 (de) * | 1995-12-28 | 2001-04-19 | St Microelectronics Srl | MOS-Technologie-Leistungsanordnung in integrierter Struktur |
US5913130A (en) * | 1996-06-12 | 1999-06-15 | Harris Corporation | Method for fabricating a power device |
EP0817247A1 (de) * | 1996-06-26 | 1998-01-07 | STMicroelectronics S.r.l. | Verfahren zur Herstellung von integrierten Schaltkreisen mit zu den aktiven Gebieten selbstjustierten Kontakten |
EP0841702A1 (de) * | 1996-11-11 | 1998-05-13 | STMicroelectronics S.r.l. | Lateraler oder vertikaler DMOSFET mit hoher Durchbruchspannung |
US5896314A (en) * | 1997-03-05 | 1999-04-20 | Macronix International Co., Ltd. | Asymmetric flash EEPROM with a pocket to focus electron injection and a manufacturing method therefor |
JP4236722B2 (ja) * | 1998-02-05 | 2009-03-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
EP0957521A1 (de) | 1998-05-11 | 1999-11-17 | STMicroelectronics S.r.l. | Speicherzellenanordnung hergestellt durch ein Self-Aligned-Source-Verfahren (SAS), die Festwertspeicherzellen (ROM) aufweist, und deren Herstellungsverfahren |
DE69839439D1 (de) | 1998-05-26 | 2008-06-19 | St Microelectronics Srl | MOS-Technologie-Leistungsanordnung mit hoher Integrationsdichte |
US6312997B1 (en) | 1998-08-12 | 2001-11-06 | Micron Technology, Inc. | Low voltage high performance semiconductor devices and methods |
GB9817745D0 (en) * | 1998-08-15 | 1998-10-14 | Philips Electronics Nv | Manufacture of electronic devices comprising thin-film circuit elements |
US5943576A (en) | 1998-09-01 | 1999-08-24 | National Semiconductor Corporation | Angled implant to build MOS transistors in contact holes |
EP1009036B1 (de) * | 1998-12-09 | 2007-09-19 | STMicroelectronics S.r.l. | Leistungsbauelement mit MOS-Gate für hohe Spannungen und diesbezügliches Herstellungsverfahren |
US6211018B1 (en) * | 1999-08-14 | 2001-04-03 | Electronics And Telecommunications Research Institute | Method for fabricating high density trench gate type power device |
EP1187220A3 (de) * | 2000-09-11 | 2007-10-10 | Kabushiki Kaisha Toshiba | MOS-Feldeffekttransistor mit reduziertem Anschaltwiderstand |
US6509241B2 (en) | 2000-12-12 | 2003-01-21 | International Business Machines Corporation | Process for fabricating an MOS device having highly-localized halo regions |
US6882053B1 (en) | 2001-12-28 | 2005-04-19 | Micrel, Inc. | Buried power buss utilized as a ground strap for high current, high power semiconductor devices and a method for providing the same |
US7183193B2 (en) * | 2001-12-28 | 2007-02-27 | Micrel, Inc. | Integrated device technology using a buried power buss for major device and circuit advantages |
US6894393B1 (en) | 2001-12-28 | 2005-05-17 | Micrel, Inc. | Buried power bus utilized as a sinker for high current, high power semiconductor devices and a method for providing the same |
EP1420457B1 (de) * | 2002-11-14 | 2012-01-11 | STMicroelectronics Srl | Herstellungsverfahren eines Leistungs-Halbleiterbauelements mit isoliertem Gate und mit Schottky-Diode |
US6864145B2 (en) * | 2003-06-30 | 2005-03-08 | Intel Corporation | Method of fabricating a robust gate dielectric using a replacement gate flow |
KR100538101B1 (ko) * | 2004-07-07 | 2005-12-21 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
KR100687108B1 (ko) * | 2005-05-31 | 2007-02-27 | 라이톤 세미컨덕터 코퍼레이션 | 기생 바이폴라 트랜지스터의 턴온을 억제할 수 있는 고전력반도체 소자 |
US6965146B1 (en) * | 2004-11-29 | 2005-11-15 | Silicon-Based Technology Corp. | Self-aligned planar DMOS transistor structure and its manufacturing methods |
EP1742271A1 (de) * | 2005-07-08 | 2007-01-10 | STMicroelectronics S.r.l. | Leistungsfeldeffekttransistor und Verfahren zu seiner Herstellung |
KR100760010B1 (ko) | 2006-09-04 | 2007-09-19 | 주식회사 파워디바이스 | 시간에 따른 전압의 변화율 특성을 향상시킨 전력 반도체소자 |
JP4956351B2 (ja) * | 2007-09-28 | 2012-06-20 | オンセミコンダクター・トレーディング・リミテッド | Dmosトランジスタの製造方法 |
CN102820338B (zh) * | 2008-02-06 | 2016-05-11 | 罗姆股份有限公司 | 半导体装置 |
US9087774B2 (en) * | 2013-09-26 | 2015-07-21 | Monolithic Power Systems, Inc. | LDMOS device with short channel and associated fabrication method |
DE102016114389B3 (de) * | 2016-08-03 | 2017-11-23 | Infineon Technologies Austria Ag | Halbleitervorrichtung mit Driftzone und rückseitigem Emitter und Verfahren zur Herstellung |
JP6877166B2 (ja) * | 2017-02-10 | 2021-05-26 | ユナイテッド・セミコンダクター・ジャパン株式会社 | 半導体装置及びその製造方法 |
Family Cites Families (30)
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US3461360A (en) * | 1965-06-30 | 1969-08-12 | Ibm | Semiconductor devices with cup-shaped regions |
US4001860A (en) * | 1973-11-12 | 1977-01-04 | Signetics Corporation | Double diffused metal oxide semiconductor structure with isolated source and drain and method |
US3909320A (en) * | 1973-12-26 | 1975-09-30 | Signetics Corp | Method for forming MOS structure using double diffusion |
JPS5185381A (de) * | 1975-01-24 | 1976-07-26 | Hitachi Ltd | |
DE2703877C2 (de) * | 1977-01-31 | 1982-06-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | MIS-Transistor von kurzer Kanallänge und Verfahren zu seiner Herstellung |
US4593302B1 (en) * | 1980-08-18 | 1998-02-03 | Int Rectifier Corp | Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide |
US4680853A (en) * | 1980-08-18 | 1987-07-21 | International Rectifier Corporation | Process for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxide |
US4417385A (en) * | 1982-08-09 | 1983-11-29 | General Electric Company | Processes for manufacturing insulated-gate semiconductor devices with integral shorts |
JP2585505B2 (ja) * | 1984-09-29 | 1997-02-26 | 株式会社東芝 | 導電変調型mosfet |
JPS6251216A (ja) * | 1985-08-30 | 1987-03-05 | Toshiba Corp | 半導体装置の製造方法 |
JPS62283669A (ja) * | 1986-06-02 | 1987-12-09 | Toshiba Corp | 導電変調型mosfet |
US4716126A (en) * | 1986-06-05 | 1987-12-29 | Siliconix Incorporated | Fabrication of double diffused metal oxide semiconductor transistor |
DE3788470T2 (de) * | 1986-08-08 | 1994-06-09 | Philips Nv | Verfahren zur Herstellung eines Feldeffekttransistors mit isoliertem Gate. |
JP2677987B2 (ja) * | 1986-10-13 | 1997-11-17 | 松下電器産業株式会社 | 半導体集積回路装置の製造方法 |
JP2706460B2 (ja) * | 1988-03-14 | 1998-01-28 | 富士通株式会社 | イオン注入方法 |
JPH0783125B2 (ja) * | 1989-06-12 | 1995-09-06 | 株式会社日立製作所 | 半導体装置 |
US5119153A (en) * | 1989-09-05 | 1992-06-02 | General Electric Company | Small cell low contact resistance rugged power field effect devices and method of fabrication |
JPH0396282A (ja) * | 1989-09-08 | 1991-04-22 | Fuji Electric Co Ltd | 絶縁ゲート型半導体装置 |
US4931408A (en) * | 1989-10-13 | 1990-06-05 | Siliconix Incorporated | Method of fabricating a short-channel low voltage DMOS transistor |
JPH03241747A (ja) * | 1990-02-20 | 1991-10-28 | Nissan Motor Co Ltd | 半導体装置の製造方法 |
JPH0462849A (ja) * | 1990-06-25 | 1992-02-27 | Matsushita Electron Corp | 半導体装置の製造方法 |
JPH0465132A (ja) * | 1990-07-05 | 1992-03-02 | Oki Electric Ind Co Ltd | 二重拡散型mos fetの製造方法 |
DE69029942T2 (de) * | 1990-10-16 | 1997-08-28 | Cons Ric Microelettronica | Verfahren zur Herstellung von MOS-Leistungstransistoren mit vertikalem Strom |
JPH06104445A (ja) * | 1992-08-04 | 1994-04-15 | Siliconix Inc | 電力用mosトランジスタ及びその製造方法 |
JP2984478B2 (ja) * | 1992-08-15 | 1999-11-29 | 株式会社東芝 | 伝導度変調型半導体装置及びその製造方法 |
FR2698486B1 (fr) * | 1992-11-24 | 1995-03-10 | Sgs Thomson Microelectronics | Structure de protection contre les surtensions directes pour composant semiconducteur vertical. |
JPH06151737A (ja) * | 1992-10-30 | 1994-05-31 | Toshiba Corp | 半導体装置及びその製造方法 |
US5378641A (en) * | 1993-02-22 | 1995-01-03 | Micron Semiconductor, Inc. | Electrically conductive substrate interconnect continuity region and method of forming same with an angled implant |
JP3050717B2 (ja) * | 1993-03-24 | 2000-06-12 | シャープ株式会社 | 半導体装置の製造方法 |
US5459085A (en) * | 1994-05-13 | 1995-10-17 | Lsi Logic Corporation | Gate array layout to accommodate multi angle ion implantation |
-
1994
- 1994-07-04 DE DE69429915T patent/DE69429915D1/de not_active Expired - Lifetime
- 1994-07-04 EP EP94830331A patent/EP0696054B1/de not_active Expired - Lifetime
-
1995
- 1995-06-30 US US08/498,008 patent/US5670392A/en not_active Expired - Lifetime
- 1995-07-04 JP JP7168693A patent/JP3032138B2/ja not_active Expired - Fee Related
-
1997
- 1997-03-06 US US08/811,363 patent/US6369425B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP3032138B2 (ja) | 2000-04-10 |
EP0696054A1 (de) | 1996-02-07 |
US5670392A (en) | 1997-09-23 |
US6369425B1 (en) | 2002-04-09 |
JPH0897168A (ja) | 1996-04-12 |
EP0696054B1 (de) | 2002-02-20 |
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Legal Events
Date | Code | Title | Description |
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8332 | No legal effect for de |