FR2452785A1 - Procede pour fabriquer un transistor a effet de champ mis possedant un canal d'une longueur reglable extremement courte - Google Patents

Procede pour fabriquer un transistor a effet de champ mis possedant un canal d'une longueur reglable extremement courte

Info

Publication number
FR2452785A1
FR2452785A1 FR8005898A FR8005898A FR2452785A1 FR 2452785 A1 FR2452785 A1 FR 2452785A1 FR 8005898 A FR8005898 A FR 8005898A FR 8005898 A FR8005898 A FR 8005898A FR 2452785 A1 FR2452785 A1 FR 2452785A1
Authority
FR
France
Prior art keywords
channel
manufacturing
effect transistor
extremely short
adjustable length
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8005898A
Other languages
English (en)
Other versions
FR2452785B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2452785A1 publication Critical patent/FR2452785A1/fr
Application granted granted Critical
Publication of FR2452785B1 publication Critical patent/FR2452785B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0856—Source regions
    • H01L29/086—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)

Abstract

PROCEDE POUR FABRIQUER UN TRANSISTOR A EFFET DE CHAMP MIS POSSEDANT UN CANAL D'UNE LONGUEUR REGLABLE EXTREMEMENT COURTE. SELON CE PROCEDE, SELON LEQUEL ON DEPOSE SUR UN SUBSTRAT 1 UNE COUCHE ISOLANTE 2 ET UNE ELECTRODE DE GRILLE 6, ET ON REALISE DES REGIONS 8, 9 DE SOURCE ET DE DRAIN PAR IMPLANTATION 11 D'IONS, ON UTILISE, COMME MASQUE D'IMPLANTATION, AU MOINS UNE COUCHE 6 SITUEE SUR LE SUBSTRAT SEMI-CONDUCTEUR ET IMPENETRABLE POUR LES IONS INCIDENTS. APPLICATION NOTAMMENT AUX COMPOSANTS MOS.
FR8005898A 1979-03-29 1980-03-17 Procede pour fabriquer un transistor a effet de champ mis possedant un canal d'une longueur reglable extremement courte Granted FR2452785A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2912535A DE2912535C2 (de) 1979-03-29 1979-03-29 Verfahren zur Herstellung eines MIS-Feldeffekt-Transistors mit einstellbarer, extrem kurzer Kanallänge

Publications (2)

Publication Number Publication Date
FR2452785A1 true FR2452785A1 (fr) 1980-10-24
FR2452785B1 FR2452785B1 (fr) 1985-02-22

Family

ID=6066830

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8005898A Granted FR2452785A1 (fr) 1979-03-29 1980-03-17 Procede pour fabriquer un transistor a effet de champ mis possedant un canal d'une longueur reglable extremement courte

Country Status (5)

Country Link
US (1) US4305201A (fr)
JP (1) JPS55132073A (fr)
DE (1) DE2912535C2 (fr)
FR (1) FR2452785A1 (fr)
GB (1) GB2046993B (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4402761A (en) * 1978-12-15 1983-09-06 Raytheon Company Method of making self-aligned gate MOS device having small channel lengths
US4294002A (en) * 1979-05-21 1981-10-13 International Business Machines Corp. Making a short-channel FET
US4369072A (en) * 1981-01-22 1983-01-18 International Business Machines Corp. Method for forming IGFET devices having improved drain voltage characteristics
US4549336A (en) * 1981-12-28 1985-10-29 Mostek Corporation Method of making MOS read only memory by specified double implantation
JPH07118484B2 (ja) * 1987-10-09 1995-12-18 沖電気工業株式会社 ショットキーゲート電界効果トランジスタの製造方法
US4943537A (en) * 1988-06-23 1990-07-24 Dallas Semiconductor Corporation CMOS integrated circuit with reduced susceptibility to PMOS punchthrough
US5122474A (en) * 1988-06-23 1992-06-16 Dallas Semiconductor Corporation Method of fabricating a CMOS IC with reduced susceptibility to PMOS punchthrough
US5072267A (en) * 1989-06-28 1991-12-10 Nec Corporation Complementary field effect transistor
US5565369A (en) * 1993-09-03 1996-10-15 United Microelectronics Corporation Method of making retarded DDD (double diffused drain) device structure
EP0789401A3 (fr) * 1995-08-25 1998-09-16 Matsushita Electric Industrial Co., Ltd. LD MOSFET ou MOSFET avec un circuit intégré contenant celui-ci et méthode de fabrication
CN102148254A (zh) * 2011-01-21 2011-08-10 北京大学 深能级杂质电离碰撞晶体管

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4001048A (en) * 1974-06-26 1977-01-04 Signetics Corporation Method of making metal oxide semiconductor structures using ion implantation
US4062699A (en) * 1976-02-20 1977-12-13 Western Digital Corporation Method for fabricating diffusion self-aligned short channel MOS device
DE2703877A1 (de) * 1977-01-31 1978-08-03 Siemens Ag Mis-feldeffekttransistor mit kurzer kanallaenge

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3846822A (en) * 1973-10-05 1974-11-05 Bell Telephone Labor Inc Methods for making field effect transistors
DE2507613C3 (de) * 1975-02-21 1979-07-05 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung eines invers betriebenen Transistors
JPS53118982A (en) * 1977-03-28 1978-10-17 Seiko Instr & Electronics Ltd Electrostatic induction transistor logic element
JPS53129980A (en) * 1977-04-20 1978-11-13 Hitachi Ltd Production of mos semiconductor device
US4173818A (en) * 1978-05-30 1979-11-13 International Business Machines Corporation Method for fabricating transistor structures having very short effective channels

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4001048A (en) * 1974-06-26 1977-01-04 Signetics Corporation Method of making metal oxide semiconductor structures using ion implantation
US4062699A (en) * 1976-02-20 1977-12-13 Western Digital Corporation Method for fabricating diffusion self-aligned short channel MOS device
DE2703877A1 (de) * 1977-01-31 1978-08-03 Siemens Ag Mis-feldeffekttransistor mit kurzer kanallaenge
FR2379168A1 (fr) * 1977-01-31 1978-08-25 Siemens Ag Transistor a effet de champ mis possedant une courte longueur de canal

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/77 *
EXBK/78 *

Also Published As

Publication number Publication date
DE2912535A1 (de) 1980-10-02
FR2452785B1 (fr) 1985-02-22
GB2046993B (en) 1983-03-09
US4305201A (en) 1981-12-15
GB2046993A (en) 1980-11-19
JPS55132073A (en) 1980-10-14
DE2912535C2 (de) 1983-04-07

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Legal Events

Date Code Title Description
ST Notification of lapse