CA2001682A1 - Transistor en couches minces a fonction de memorisation et methode pour utiliser ce transistor comme element de memoire - Google Patents
Transistor en couches minces a fonction de memorisation et methode pour utiliser ce transistor comme element de memoireInfo
- Publication number
- CA2001682A1 CA2001682A1 CA2001682A CA2001682A CA2001682A1 CA 2001682 A1 CA2001682 A1 CA 2001682A1 CA 2001682 A CA2001682 A CA 2001682A CA 2001682 A CA2001682 A CA 2001682A CA 2001682 A1 CA2001682 A1 CA 2001682A1
- Authority
- CA
- Canada
- Prior art keywords
- thin film
- film transistor
- semiconductor layer
- gate
- memory element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title abstract 6
- 230000006386 memory function Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 5
- 239000010408 film Substances 0.000 abstract 4
- 238000009413 insulation Methods 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000001276 controlling effect Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (14)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63270893A JPH0831607B2 (ja) | 1988-10-28 | 1988-10-28 | メモリ用薄膜トランジスタ |
JP63-270893 | 1988-10-28 | ||
JP63282596A JPH02130837A (ja) | 1988-11-10 | 1988-11-10 | 薄膜トランジスタおよびその製造方法 |
JP63-282596 | 1988-11-10 | ||
JP1-78390 | 1989-03-31 | ||
JP1078390A JPH02260462A (ja) | 1989-03-31 | 1989-03-31 | 薄膜メモリ素子 |
JP1-87009 | 1989-04-07 | ||
JP1087009A JPH02266570A (ja) | 1989-04-07 | 1989-04-07 | メモリ用薄膜トランジスタ |
JP1989043099U JPH02137054U (fr) | 1989-04-14 | 1989-04-14 | |
JP1989043098U JPH02137053U (fr) | 1989-04-14 | 1989-04-14 | |
JP1117580A JPH02297972A (ja) | 1989-05-12 | 1989-05-12 | メモリ用薄膜トランジスタおよびそのゲート絶縁膜の形成方法 |
JP1-117580 | 1989-05-12 | ||
JP1-43098 | 1989-11-29 | ||
JP1-43099 | 1989-11-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CA2001682A1 true CA2001682A1 (fr) | 1990-04-28 |
CA2001682C CA2001682C (fr) | 1994-05-03 |
Family
ID=27564561
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA002001682A Expired - Fee Related CA2001682C (fr) | 1988-10-28 | 1989-10-27 | Transistor en couches minces a fonction de memorisation et methode pour utiliser ce transistor comme element de memoire |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0366146B1 (fr) |
KR (1) | KR930003556B1 (fr) |
CA (1) | CA2001682C (fr) |
DE (1) | DE68912071T2 (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3613594B2 (ja) | 1993-08-19 | 2005-01-26 | 株式会社ルネサステクノロジ | 半導体素子およびこれを用いた半導体記憶装置 |
JP4538693B2 (ja) * | 1998-01-26 | 2010-09-08 | ソニー株式会社 | メモリ素子およびその製造方法 |
EP0986107A1 (fr) * | 1998-09-08 | 2000-03-15 | STMicroelectronics S.r.l. | Structure de cellules en matrice pour un dispositif de mémoire électriquement effaçable et programmable |
KR100730141B1 (ko) * | 2005-08-02 | 2007-06-19 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 구비한 평판표시장치 |
CN112909087A (zh) * | 2021-03-08 | 2021-06-04 | 滁州惠科光电科技有限公司 | 一种显示面板、薄膜晶体管及其制备方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4096509A (en) * | 1976-07-22 | 1978-06-20 | The United States Of America As Represented By The Secretary Of The Air Force | MNOS memory transistor having a redeposited silicon nitride gate dielectric |
US4053917A (en) * | 1976-08-16 | 1977-10-11 | The United States Of America As Represented By The Secretary Of The Air Force | Drain source protected MNOS transistor and method of manufacture |
US4323910A (en) * | 1977-11-28 | 1982-04-06 | Rca Corporation | MNOS Memory transistor |
US4876582A (en) * | 1983-05-02 | 1989-10-24 | Ncr Corporation | Crystallized silicon-on-insulator nonvolatile memory device |
EP0138439B1 (fr) * | 1983-09-28 | 1990-12-19 | Kabushiki Kaisha Toshiba | Dispositif de mémoire semi-conducteur non volatil, électriquement effaçable et programmable ayant deux électrodes de portes |
-
1989
- 1989-10-27 DE DE89120014T patent/DE68912071T2/de not_active Expired - Fee Related
- 1989-10-27 EP EP89120014A patent/EP0366146B1/fr not_active Expired - Lifetime
- 1989-10-27 CA CA002001682A patent/CA2001682C/fr not_active Expired - Fee Related
- 1989-10-28 KR KR1019890015604A patent/KR930003556B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR930003556B1 (ko) | 1993-05-06 |
EP0366146A2 (fr) | 1990-05-02 |
EP0366146A3 (en) | 1990-11-07 |
DE68912071D1 (de) | 1994-02-17 |
DE68912071T2 (de) | 1994-04-28 |
CA2001682C (fr) | 1994-05-03 |
EP0366146B1 (fr) | 1994-01-05 |
KR900007075A (ko) | 1990-05-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EEER | Examination request | ||
MKLA | Lapsed |