DE68912071T2 - Dünnfilm-Transistor mit einer Speicherfunktion und Verfahren zur Verwendung eines Dünnfilmtransistors als Speicherelement. - Google Patents

Dünnfilm-Transistor mit einer Speicherfunktion und Verfahren zur Verwendung eines Dünnfilmtransistors als Speicherelement.

Info

Publication number
DE68912071T2
DE68912071T2 DE89120014T DE68912071T DE68912071T2 DE 68912071 T2 DE68912071 T2 DE 68912071T2 DE 89120014 T DE89120014 T DE 89120014T DE 68912071 T DE68912071 T DE 68912071T DE 68912071 T2 DE68912071 T2 DE 68912071T2
Authority
DE
Germany
Prior art keywords
thin film
film transistor
memory
memory element
memory function
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE89120014T
Other languages
English (en)
Other versions
DE68912071D1 (de
Inventor
Hiroshi P D Dev Div Matsumoto
Hiroyasu P D Dev Div Ha Yamada
Nobuyuki P D Dev Div Yamamura
Shinichi P D Dev Div Shimomaki
Naohiro P D Dev Div Hamu Konya
Kyuya P D Dev Div Hamura Baba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Casio Computer Co Ltd
Original Assignee
Casio Computer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63270893A external-priority patent/JPH0831607B2/ja
Priority claimed from JP63282596A external-priority patent/JPH02130837A/ja
Priority claimed from JP1078390A external-priority patent/JPH02260462A/ja
Priority claimed from JP1087009A external-priority patent/JPH02266570A/ja
Priority claimed from JP1989043098U external-priority patent/JPH02137053U/ja
Priority claimed from JP1989043099U external-priority patent/JPH02137054U/ja
Priority claimed from JP1117580A external-priority patent/JPH02297972A/ja
Application filed by Casio Computer Co Ltd filed Critical Casio Computer Co Ltd
Publication of DE68912071D1 publication Critical patent/DE68912071D1/de
Publication of DE68912071T2 publication Critical patent/DE68912071T2/de
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
DE89120014T 1988-10-28 1989-10-27 Dünnfilm-Transistor mit einer Speicherfunktion und Verfahren zur Verwendung eines Dünnfilmtransistors als Speicherelement. Expired - Fee Related DE68912071T2 (de)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP63270893A JPH0831607B2 (ja) 1988-10-28 1988-10-28 メモリ用薄膜トランジスタ
JP63282596A JPH02130837A (ja) 1988-11-10 1988-11-10 薄膜トランジスタおよびその製造方法
JP1078390A JPH02260462A (ja) 1989-03-31 1989-03-31 薄膜メモリ素子
JP1087009A JPH02266570A (ja) 1989-04-07 1989-04-07 メモリ用薄膜トランジスタ
JP1989043099U JPH02137054U (de) 1989-04-14 1989-04-14
JP1989043098U JPH02137053U (de) 1989-04-14 1989-04-14
JP1117580A JPH02297972A (ja) 1989-05-12 1989-05-12 メモリ用薄膜トランジスタおよびそのゲート絶縁膜の形成方法

Publications (2)

Publication Number Publication Date
DE68912071D1 DE68912071D1 (de) 1994-02-17
DE68912071T2 true DE68912071T2 (de) 1994-04-28

Family

ID=27564561

Family Applications (1)

Application Number Title Priority Date Filing Date
DE89120014T Expired - Fee Related DE68912071T2 (de) 1988-10-28 1989-10-27 Dünnfilm-Transistor mit einer Speicherfunktion und Verfahren zur Verwendung eines Dünnfilmtransistors als Speicherelement.

Country Status (4)

Country Link
EP (1) EP0366146B1 (de)
KR (1) KR930003556B1 (de)
CA (1) CA2001682C (de)
DE (1) DE68912071T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3613594B2 (ja) 1993-08-19 2005-01-26 株式会社ルネサステクノロジ 半導体素子およびこれを用いた半導体記憶装置
JP4538693B2 (ja) * 1998-01-26 2010-09-08 ソニー株式会社 メモリ素子およびその製造方法
EP0986107A1 (de) * 1998-09-08 2000-03-15 STMicroelectronics S.r.l. Zellenanordnung für ein elektrisch löschbares und programmierbares nicht-flüchtiges Speicherbauelement
KR100730141B1 (ko) * 2005-08-02 2007-06-19 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 구비한 평판표시장치
CN112909087A (zh) * 2021-03-08 2021-06-04 滁州惠科光电科技有限公司 一种显示面板、薄膜晶体管及其制备方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4096509A (en) * 1976-07-22 1978-06-20 The United States Of America As Represented By The Secretary Of The Air Force MNOS memory transistor having a redeposited silicon nitride gate dielectric
US4053917A (en) * 1976-08-16 1977-10-11 The United States Of America As Represented By The Secretary Of The Air Force Drain source protected MNOS transistor and method of manufacture
US4323910A (en) * 1977-11-28 1982-04-06 Rca Corporation MNOS Memory transistor
US4876582A (en) * 1983-05-02 1989-10-24 Ncr Corporation Crystallized silicon-on-insulator nonvolatile memory device
EP0138439B1 (de) * 1983-09-28 1990-12-19 Kabushiki Kaisha Toshiba Elektrisch löschbare und programmierbare nichtflüchtige Halbleiterspeicheranordnung mit zwei Gate-Elektroden

Also Published As

Publication number Publication date
KR930003556B1 (ko) 1993-05-06
KR900007075A (ko) 1990-05-09
DE68912071D1 (de) 1994-02-17
EP0366146A2 (de) 1990-05-02
EP0366146A3 (en) 1990-11-07
CA2001682C (en) 1994-05-03
CA2001682A1 (en) 1990-04-28
EP0366146B1 (de) 1994-01-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee