FR1473738A - Dispositif à semi-conducteurs - Google Patents

Dispositif à semi-conducteurs

Info

Publication number
FR1473738A
FR1473738A FR56251A FR56251A FR1473738A FR 1473738 A FR1473738 A FR 1473738A FR 56251 A FR56251 A FR 56251A FR 56251 A FR56251 A FR 56251A FR 1473738 A FR1473738 A FR 1473738A
Authority
FR
France
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR56251A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Application granted granted Critical
Publication of FR1473738A publication Critical patent/FR1473738A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/901—Capacitive junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR56251A 1965-04-07 1966-04-04 Dispositif à semi-conducteurs Expired FR1473738A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0096402 1965-04-07

Publications (1)

Publication Number Publication Date
FR1473738A true FR1473738A (fr) 1967-03-17

Family

ID=7520030

Family Applications (1)

Application Number Title Priority Date Filing Date
FR56251A Expired FR1473738A (fr) 1965-04-07 1966-04-04 Dispositif à semi-conducteurs

Country Status (8)

Country Link
US (1) US3411053A (fr)
AT (1) AT267707B (fr)
CH (1) CH447391A (fr)
DE (1) DE1514431C3 (fr)
FR (1) FR1473738A (fr)
GB (1) GB1133634A (fr)
NL (1) NL6604071A (fr)
SE (1) SE321989B (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3506887A (en) * 1966-02-23 1970-04-14 Motorola Inc Semiconductor device and method of making same
US3523838A (en) * 1967-05-09 1970-08-11 Motorola Inc Variable capacitance diode
DE1589693C3 (de) * 1967-08-03 1980-04-03 Deutsche Itt Industries Gmbh, 7800 Freiburg Halbleiterbauelement mit flächenhaftem PN-Übergang
US3591836A (en) * 1969-03-04 1971-07-06 North American Rockwell Field effect conditionally switched capacitor
US3611070A (en) * 1970-06-15 1971-10-05 Gen Electric Voltage-variable capacitor with controllably extendible pn junction region
US3922710A (en) * 1971-12-17 1975-11-25 Matsushita Electronics Corp Semiconductor memory device
US3911466A (en) * 1973-10-29 1975-10-07 Motorola Inc Digitally controllable enhanced capacitor
US4005466A (en) * 1975-05-07 1977-01-25 Rca Corporation Planar voltage variable tuning capacitors
GB1602361A (en) * 1977-02-21 1981-11-11 Zaidan Hojin Handotai Kenkyu Semiconductor memory devices
JPS55120175A (en) * 1979-03-12 1980-09-16 Clarion Co Ltd Variable capacitance diode with plural super-capacitance variable electrode structures
GB2060250B (en) * 1979-03-12 1983-12-14 Clarion Co Ltd Controllable semiconductor capacitors
US4226648A (en) * 1979-03-16 1980-10-07 Bell Telephone Laboratories, Incorporated Method of making a hyperabrupt varactor diode utilizing molecular beam epitaxy
JPS57103366A (en) * 1980-12-18 1982-06-26 Clarion Co Ltd Variable-capacitance device
GB2104725B (en) * 1981-07-17 1986-04-09 Clarion Co Ltd Variable capacitance device
US4727406A (en) * 1982-02-12 1988-02-23 Rockwell International Corporation Pre-multiplexed detector array
JPS59154077A (ja) * 1983-02-23 1984-09-03 Clarion Co Ltd 可変容量素子
GB9416900D0 (en) * 1994-08-20 1994-10-12 Philips Electronics Uk Ltd A variable capacitance semiconductor diode
TWI478033B (zh) * 2012-09-07 2015-03-21 E Ink Holdings Inc 電容式觸控面板的電容結構

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL240714A (fr) * 1958-07-02
NL243218A (fr) * 1958-12-24
DE1160106B (de) * 1960-11-11 1963-12-27 Intermetall Halbleiterverstaerker mit flaechenhaften pn-UEbergaengen mit Tunnelcharakteristik und Verfahren zum Herstellen
US3246173A (en) * 1964-01-29 1966-04-12 Rca Corp Signal translating circuit employing insulated-gate field effect transistors coupledthrough a common semiconductor substrate

Also Published As

Publication number Publication date
NL6604071A (fr) 1966-10-10
DE1514431B2 (de) 1974-01-31
CH447391A (de) 1967-11-30
AT267707B (de) 1969-01-10
US3411053A (en) 1968-11-12
DE1514431A1 (de) 1969-06-26
GB1133634A (en) 1968-11-13
SE321989B (fr) 1970-03-23
DE1514431C3 (de) 1974-08-22

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