NL134389C - - Google Patents

Info

Publication number
NL134389C
NL134389C NL134389DA NL134389C NL 134389 C NL134389 C NL 134389C NL 134389D A NL134389D A NL 134389DA NL 134389 C NL134389 C NL 134389C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL134389C publication Critical patent/NL134389C/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)
NL134389D 1958-07-02 NL134389C (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1958S0058824 DE1075745C2 (de) 1958-07-02 1958-07-02 Halbleiteranordnung mit einem pn-Übergang zur Verwendung als spannungsabhängige Kapazität

Publications (1)

Publication Number Publication Date
NL134389C true NL134389C (fr)

Family

ID=7492837

Family Applications (2)

Application Number Title Priority Date Filing Date
NL134389D NL134389C (fr) 1958-07-02
NL240714D NL240714A (fr) 1958-07-02

Family Applications After (1)

Application Number Title Priority Date Filing Date
NL240714D NL240714A (fr) 1958-07-02

Country Status (6)

Country Link
US (1) US2993155A (fr)
CH (1) CH374427A (fr)
DE (1) DE1075745C2 (fr)
FR (1) FR1229266A (fr)
GB (1) GB886637A (fr)
NL (2) NL240714A (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1225765C2 (de) * 1959-03-11 1973-05-17 Maurice Gilbert Anatole Bernar Elektrischer Kondensator mit spannungsabhaengiger Kapazitaet, bestehend aus einem Halbleiterkoerper
DE1292253B (de) * 1959-09-26 1969-04-10 Telefunken Patent Halbleiteranordnung
DE1175797B (de) * 1960-12-22 1964-08-13 Standard Elektrik Lorenz Ag Verfahren zum Herstellen von elektrischen Halb-leiterbauelementen
US3176151A (en) * 1961-02-13 1965-03-30 Bell Telephone Labor Inc Varactor diode with concentration of deep lying impurities and enabling circuitry
US3397349A (en) * 1961-02-17 1968-08-13 Motorola Inc High voltage semiconductor rectifier with a sloping surface across barrier edge
DE1464669B1 (de) * 1961-03-06 1971-02-04 Itt Ind Gmbh Deutsche Halbleiterdiode mit stark spannungsabhaengiger Kapazitaet
NL280641A (fr) * 1961-07-07
NL280849A (fr) * 1961-07-12 1900-01-01
GB1052661A (fr) * 1963-01-30 1900-01-01
DE1514431C3 (de) * 1965-04-07 1974-08-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiteranordnung mit pn-Übergang zur Verwendung als spannungsabhängige Kapazität
US3343050A (en) * 1965-05-24 1967-09-19 Westinghouse Electric Corp High voltage rectifier having controlled current leakage
CH426020A (de) * 1965-09-08 1966-12-15 Bbc Brown Boveri & Cie Verfahren zur Herstellung des Halbleiterelementes eines stossspannungsfesten Halbleiterventils, sowie ein mit Hilfe dieses Verfahrens hergestelltes Halbleiterelement
GB1139154A (en) * 1967-01-30 1969-01-08 Westinghouse Brake & Signal Semi-conductor devices and the manufacture thereof
US3969750A (en) * 1974-02-12 1976-07-13 International Business Machines Corporation Diffused junction capacitor and process for producing the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB692337A (en) * 1951-10-24 1953-06-03 Standard Telephones Cables Ltd Improvements in or relating to electron beam tube arrangements
DE1031893B (de) * 1952-08-01 1958-06-12 Standard Elektrik Ag Verfahren zur aeusseren Formgebung von Halbleiteranordnungen, insbesondere fuer Gleichrichter- und Verstaerkerzwecke mit Halbleitern aus Germanium oder Silizium
BE525428A (fr) * 1952-12-30
GB774388A (en) * 1954-01-28 1957-05-08 Marconi Wireless Telegraph Co Improvements in or relating to semi-conducting amplifiers
US2904704A (en) * 1954-06-17 1959-09-15 Gen Electric Semiconductor devices
US2913676A (en) * 1955-04-18 1959-11-17 Rca Corp Semiconductor devices and systems
US2879190A (en) * 1957-03-22 1959-03-24 Bell Telephone Labor Inc Fabrication of silicon devices

Also Published As

Publication number Publication date
DE1075745B (de) 1960-02-18
FR1229266A (fr) 1960-09-06
GB886637A (en) 1962-01-10
DE1075745C2 (de) 1966-03-24
US2993155A (en) 1961-07-18
CH374427A (de) 1964-01-15
NL240714A (fr)

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