CH447391A - Halbleiteranordnung mit pn-Übergang zur Verwendung als spannungsabhängige Kapazität - Google Patents
Halbleiteranordnung mit pn-Übergang zur Verwendung als spannungsabhängige KapazitätInfo
- Publication number
- CH447391A CH447391A CH498566A CH498566A CH447391A CH 447391 A CH447391 A CH 447391A CH 498566 A CH498566 A CH 498566A CH 498566 A CH498566 A CH 498566A CH 447391 A CH447391 A CH 447391A
- Authority
- CH
- Switzerland
- Prior art keywords
- junction
- voltage
- semiconductor arrangement
- dependent capacitance
- capacitance
- Prior art date
Links
- 230000001419 dependent effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/901—Capacitive junction
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES0096402 | 1965-04-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH447391A true CH447391A (de) | 1967-11-30 |
Family
ID=7520030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH498566A CH447391A (de) | 1965-04-07 | 1966-04-05 | Halbleiteranordnung mit pn-Übergang zur Verwendung als spannungsabhängige Kapazität |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3411053A (de) |
| AT (1) | AT267707B (de) |
| CH (1) | CH447391A (de) |
| DE (1) | DE1514431C3 (de) |
| FR (1) | FR1473738A (de) |
| GB (1) | GB1133634A (de) |
| NL (1) | NL6604071A (de) |
| SE (1) | SE321989B (de) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3506887A (en) * | 1966-02-23 | 1970-04-14 | Motorola Inc | Semiconductor device and method of making same |
| US3523838A (en) * | 1967-05-09 | 1970-08-11 | Motorola Inc | Variable capacitance diode |
| DE1589693C3 (de) * | 1967-08-03 | 1980-04-03 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Halbleiterbauelement mit flächenhaftem PN-Übergang |
| US3591836A (en) * | 1969-03-04 | 1971-07-06 | North American Rockwell | Field effect conditionally switched capacitor |
| US3611070A (en) * | 1970-06-15 | 1971-10-05 | Gen Electric | Voltage-variable capacitor with controllably extendible pn junction region |
| US3922710A (en) * | 1971-12-17 | 1975-11-25 | Matsushita Electronics Corp | Semiconductor memory device |
| US3911466A (en) * | 1973-10-29 | 1975-10-07 | Motorola Inc | Digitally controllable enhanced capacitor |
| US4005466A (en) * | 1975-05-07 | 1977-01-25 | Rca Corporation | Planar voltage variable tuning capacitors |
| NL191683C (nl) * | 1977-02-21 | 1996-02-05 | Zaidan Hojin Handotai Kenkyu | Halfgeleidergeheugenschakeling. |
| GB2060250B (en) * | 1979-03-12 | 1983-12-14 | Clarion Co Ltd | Controllable semiconductor capacitors |
| JPS55120175A (en) * | 1979-03-12 | 1980-09-16 | Clarion Co Ltd | Variable capacitance diode with plural super-capacitance variable electrode structures |
| US4226648A (en) * | 1979-03-16 | 1980-10-07 | Bell Telephone Laboratories, Incorporated | Method of making a hyperabrupt varactor diode utilizing molecular beam epitaxy |
| JPS57103366A (en) * | 1980-12-18 | 1982-06-26 | Clarion Co Ltd | Variable-capacitance device |
| GB2104725B (en) * | 1981-07-17 | 1986-04-09 | Clarion Co Ltd | Variable capacitance device |
| US4727406A (en) * | 1982-02-12 | 1988-02-23 | Rockwell International Corporation | Pre-multiplexed detector array |
| JPS59154077A (ja) * | 1983-02-23 | 1984-09-03 | Clarion Co Ltd | 可変容量素子 |
| GB9416900D0 (en) * | 1994-08-20 | 1994-10-12 | Philips Electronics Uk Ltd | A variable capacitance semiconductor diode |
| TWI478033B (zh) * | 2012-09-07 | 2015-03-21 | E Ink Holdings Inc | 電容式觸控面板的電容結構 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL134389C (de) * | 1958-07-02 | |||
| NL243218A (de) * | 1958-12-24 | |||
| DE1160106B (de) * | 1960-11-11 | 1963-12-27 | Intermetall | Halbleiterverstaerker mit flaechenhaften pn-UEbergaengen mit Tunnelcharakteristik und Verfahren zum Herstellen |
| US3246173A (en) * | 1964-01-29 | 1966-04-12 | Rca Corp | Signal translating circuit employing insulated-gate field effect transistors coupledthrough a common semiconductor substrate |
-
1965
- 1965-04-07 DE DE1514431A patent/DE1514431C3/de not_active Expired
-
1966
- 1966-03-28 NL NL6604071A patent/NL6604071A/xx unknown
- 1966-04-04 FR FR56251A patent/FR1473738A/fr not_active Expired
- 1966-04-05 US US540321A patent/US3411053A/en not_active Expired - Lifetime
- 1966-04-05 AT AT325166D patent/AT267707B/de active
- 1966-04-05 CH CH498566A patent/CH447391A/de unknown
- 1966-04-05 GB GB15041/66A patent/GB1133634A/en not_active Expired
- 1966-04-06 SE SE4782/66A patent/SE321989B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SE321989B (de) | 1970-03-23 |
| NL6604071A (de) | 1966-10-10 |
| GB1133634A (en) | 1968-11-13 |
| DE1514431B2 (de) | 1974-01-31 |
| FR1473738A (fr) | 1967-03-17 |
| DE1514431A1 (de) | 1969-06-26 |
| US3411053A (en) | 1968-11-12 |
| DE1514431C3 (de) | 1974-08-22 |
| AT267707B (de) | 1969-01-10 |
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