AT277386B - Stoßspannungsfeste Halbleiterdiode - Google Patents

Stoßspannungsfeste Halbleiterdiode

Info

Publication number
AT277386B
AT277386B AT832968A AT832968A AT277386B AT 277386 B AT277386 B AT 277386B AT 832968 A AT832968 A AT 832968A AT 832968 A AT832968 A AT 832968A AT 277386 B AT277386 B AT 277386B
Authority
AT
Austria
Prior art keywords
surge voltage
semiconductor diode
proof semiconductor
proof
diode
Prior art date
Application number
AT832968A
Other languages
English (en)
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Application granted granted Critical
Publication of AT277386B publication Critical patent/AT277386B/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
AT832968A 1968-07-22 1968-08-27 Stoßspannungsfeste Halbleiterdiode AT277386B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1097768A CH485329A (de) 1968-07-22 1968-07-22 Stossspannungsfeste Halbleiterdiode

Publications (1)

Publication Number Publication Date
AT277386B true AT277386B (de) 1969-12-29

Family

ID=4368765

Family Applications (1)

Application Number Title Priority Date Filing Date
AT832968A AT277386B (de) 1968-07-22 1968-08-27 Stoßspannungsfeste Halbleiterdiode

Country Status (8)

Country Link
US (1) US3662233A (de)
AT (1) AT277386B (de)
CH (1) CH485329A (de)
DE (2) DE1926459C3 (de)
FR (1) FR2013446A7 (de)
GB (1) GB1268102A (de)
NL (1) NL6814397A (de)
SE (1) SE339848B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE787597A (fr) * 1971-08-16 1973-02-16 Siemens Ag Thyristor
JPS502482A (de) * 1973-05-08 1975-01-11
DE2916114A1 (de) * 1978-04-21 1979-10-31 Hitachi Ltd Halbleitervorrichtung
JPS6017949B2 (ja) * 1980-04-24 1985-05-08 サンケン電気株式会社 内燃機関の点火装置
DE3030564A1 (de) * 1980-08-13 1982-03-11 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiterbauelement fuer hohe sperrspannungen
US7332750B1 (en) 2000-09-01 2008-02-19 Fairchild Semiconductor Corporation Power semiconductor device with improved unclamped inductive switching capability and process for forming same
DE102017103111B4 (de) * 2017-02-16 2025-03-13 Semikron Elektronik Gmbh & Co. Kg Halbleiterdiode und elektronische Schaltungsanordnung hiermit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3337783A (en) * 1964-01-16 1967-08-22 Westinghouse Electric Corp Shorted emitter controlled rectifier with improved turn-off gain
US3404304A (en) * 1964-04-30 1968-10-01 Texas Instruments Inc Semiconductor junction device for generating optical radiation
US3370209A (en) * 1964-08-31 1968-02-20 Gen Electric Power bulk breakdown semiconductor devices
US3417299A (en) * 1965-07-20 1968-12-17 Raytheon Co Controlled breakdown voltage diode
US3507714A (en) * 1967-08-16 1970-04-21 Westinghouse Electric Corp High current single diffused transistor
US3514846A (en) * 1967-11-15 1970-06-02 Bell Telephone Labor Inc Method of fabricating a planar avalanche photodiode

Also Published As

Publication number Publication date
SE339848B (de) 1971-10-25
US3662233A (en) 1972-05-09
DE1926459A1 (de) 1970-06-04
NL6814397A (de) 1970-01-26
DE6920869U (de) 1970-10-29
DE1926459B2 (de) 1977-09-22
DE1926459C3 (de) 1978-05-03
FR2013446A7 (de) 1970-04-03
GB1268102A (en) 1972-03-22
CH485329A (de) 1970-01-31

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