SE339848B - - Google Patents
Info
- Publication number
- SE339848B SE339848B SE10269/69A SE1026969A SE339848B SE 339848 B SE339848 B SE 339848B SE 10269/69 A SE10269/69 A SE 10269/69A SE 1026969 A SE1026969 A SE 1026969A SE 339848 B SE339848 B SE 339848B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
- H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH1097768A CH485329A (de) | 1968-07-22 | 1968-07-22 | Stossspannungsfeste Halbleiterdiode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE339848B true SE339848B (de) | 1971-10-25 |
Family
ID=4368765
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE10269/69A SE339848B (de) | 1968-07-22 | 1969-07-21 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3662233A (de) |
| AT (1) | AT277386B (de) |
| CH (1) | CH485329A (de) |
| DE (2) | DE6920869U (de) |
| FR (1) | FR2013446A7 (de) |
| GB (1) | GB1268102A (de) |
| NL (1) | NL6814397A (de) |
| SE (1) | SE339848B (de) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE787597A (fr) * | 1971-08-16 | 1973-02-16 | Siemens Ag | Thyristor |
| JPS502482A (de) * | 1973-05-08 | 1975-01-11 | ||
| DE2916114A1 (de) * | 1978-04-21 | 1979-10-31 | Hitachi Ltd | Halbleitervorrichtung |
| JPS6017949B2 (ja) * | 1980-04-24 | 1985-05-08 | サンケン電気株式会社 | 内燃機関の点火装置 |
| DE3030564A1 (de) * | 1980-08-13 | 1982-03-11 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Halbleiterbauelement fuer hohe sperrspannungen |
| US7332750B1 (en) | 2000-09-01 | 2008-02-19 | Fairchild Semiconductor Corporation | Power semiconductor device with improved unclamped inductive switching capability and process for forming same |
| DE102017103111B4 (de) * | 2017-02-16 | 2025-03-13 | Semikron Elektronik Gmbh & Co. Kg | Halbleiterdiode und elektronische Schaltungsanordnung hiermit |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3337783A (en) * | 1964-01-16 | 1967-08-22 | Westinghouse Electric Corp | Shorted emitter controlled rectifier with improved turn-off gain |
| US3404304A (en) * | 1964-04-30 | 1968-10-01 | Texas Instruments Inc | Semiconductor junction device for generating optical radiation |
| US3370209A (en) * | 1964-08-31 | 1968-02-20 | Gen Electric | Power bulk breakdown semiconductor devices |
| US3417299A (en) * | 1965-07-20 | 1968-12-17 | Raytheon Co | Controlled breakdown voltage diode |
| US3507714A (en) * | 1967-08-16 | 1970-04-21 | Westinghouse Electric Corp | High current single diffused transistor |
| US3514846A (en) * | 1967-11-15 | 1970-06-02 | Bell Telephone Labor Inc | Method of fabricating a planar avalanche photodiode |
-
1968
- 1968-07-22 CH CH1097768A patent/CH485329A/de not_active IP Right Cessation
- 1968-08-27 AT AT832968A patent/AT277386B/de active
- 1968-10-08 NL NL6814397A patent/NL6814397A/xx unknown
-
1969
- 1969-05-23 DE DE6920869U patent/DE6920869U/de not_active Expired
- 1969-05-23 DE DE1926459A patent/DE1926459C3/de not_active Expired
- 1969-06-16 US US833386A patent/US3662233A/en not_active Expired - Lifetime
- 1969-07-18 GB GB36339/69A patent/GB1268102A/en not_active Expired
- 1969-07-18 FR FR6924517A patent/FR2013446A7/fr not_active Expired
- 1969-07-21 SE SE10269/69A patent/SE339848B/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE6920869U (de) | 1970-10-29 |
| AT277386B (de) | 1969-12-29 |
| FR2013446A7 (de) | 1970-04-03 |
| DE1926459B2 (de) | 1977-09-22 |
| GB1268102A (en) | 1972-03-22 |
| NL6814397A (de) | 1970-01-26 |
| DE1926459A1 (de) | 1970-06-04 |
| US3662233A (en) | 1972-05-09 |
| DE1926459C3 (de) | 1978-05-03 |
| CH485329A (de) | 1970-01-31 |