CH485329A - Stossspannungsfeste Halbleiterdiode - Google Patents

Stossspannungsfeste Halbleiterdiode

Info

Publication number
CH485329A
CH485329A CH1097768A CH1097768A CH485329A CH 485329 A CH485329 A CH 485329A CH 1097768 A CH1097768 A CH 1097768A CH 1097768 A CH1097768 A CH 1097768A CH 485329 A CH485329 A CH 485329A
Authority
CH
Switzerland
Prior art keywords
surge voltage
semiconductor diode
proof semiconductor
proof
diode
Prior art date
Application number
CH1097768A
Other languages
English (en)
Inventor
Denis Dipl Phys Clerc
Zahn Dieter
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Priority to CH1097768A priority Critical patent/CH485329A/de
Priority to AT832968A priority patent/AT277386B/de
Priority to NL6814397A priority patent/NL6814397A/xx
Priority to DE6920869U priority patent/DE6920869U/de
Priority to DE1926459A priority patent/DE1926459C3/de
Priority to US833386A priority patent/US3662233A/en
Priority to FR6924517A priority patent/FR2013446A7/fr
Priority to GB36339/69A priority patent/GB1268102A/en
Priority to SE10269/69A priority patent/SE339848B/xx
Publication of CH485329A publication Critical patent/CH485329A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
CH1097768A 1968-07-22 1968-07-22 Stossspannungsfeste Halbleiterdiode CH485329A (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
CH1097768A CH485329A (de) 1968-07-22 1968-07-22 Stossspannungsfeste Halbleiterdiode
AT832968A AT277386B (de) 1968-07-22 1968-08-27 Stoßspannungsfeste Halbleiterdiode
NL6814397A NL6814397A (de) 1968-07-22 1968-10-08
DE6920869U DE6920869U (de) 1968-07-22 1969-05-23 Stossspannungsfeste halbleiterdiode
DE1926459A DE1926459C3 (de) 1968-07-22 1969-05-23 Stoßspannungsfeste Halbleiterdiode
US833386A US3662233A (en) 1968-07-22 1969-06-16 Semiconductor avalanche diode
FR6924517A FR2013446A7 (de) 1968-07-22 1969-07-18
GB36339/69A GB1268102A (en) 1968-07-22 1969-07-18 A semiconductor diode
SE10269/69A SE339848B (de) 1968-07-22 1969-07-21

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1097768A CH485329A (de) 1968-07-22 1968-07-22 Stossspannungsfeste Halbleiterdiode

Publications (1)

Publication Number Publication Date
CH485329A true CH485329A (de) 1970-01-31

Family

ID=4368765

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1097768A CH485329A (de) 1968-07-22 1968-07-22 Stossspannungsfeste Halbleiterdiode

Country Status (8)

Country Link
US (1) US3662233A (de)
AT (1) AT277386B (de)
CH (1) CH485329A (de)
DE (2) DE6920869U (de)
FR (1) FR2013446A7 (de)
GB (1) GB1268102A (de)
NL (1) NL6814397A (de)
SE (1) SE339848B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE787597A (fr) * 1971-08-16 1973-02-16 Siemens Ag Thyristor
JPS502482A (de) * 1973-05-08 1975-01-11
DE2916114A1 (de) * 1978-04-21 1979-10-31 Hitachi Ltd Halbleitervorrichtung
JPS6017949B2 (ja) * 1980-04-24 1985-05-08 サンケン電気株式会社 内燃機関の点火装置
DE3030564A1 (de) * 1980-08-13 1982-03-11 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiterbauelement fuer hohe sperrspannungen
US7332750B1 (en) 2000-09-01 2008-02-19 Fairchild Semiconductor Corporation Power semiconductor device with improved unclamped inductive switching capability and process for forming same
DE102017103111A1 (de) * 2017-02-16 2018-08-16 Semikron Elektronik Gmbh & Co. Kg Halbleiterdiode und elektronische Schaltungsanordnung hiermit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3337783A (en) * 1964-01-16 1967-08-22 Westinghouse Electric Corp Shorted emitter controlled rectifier with improved turn-off gain
US3404304A (en) * 1964-04-30 1968-10-01 Texas Instruments Inc Semiconductor junction device for generating optical radiation
US3370209A (en) * 1964-08-31 1968-02-20 Gen Electric Power bulk breakdown semiconductor devices
US3417299A (en) * 1965-07-20 1968-12-17 Raytheon Co Controlled breakdown voltage diode
US3507714A (en) * 1967-08-16 1970-04-21 Westinghouse Electric Corp High current single diffused transistor
US3514846A (en) * 1967-11-15 1970-06-02 Bell Telephone Labor Inc Method of fabricating a planar avalanche photodiode

Also Published As

Publication number Publication date
DE6920869U (de) 1970-10-29
AT277386B (de) 1969-12-29
DE1926459A1 (de) 1970-06-04
GB1268102A (en) 1972-03-22
DE1926459B2 (de) 1977-09-22
FR2013446A7 (de) 1970-04-03
DE1926459C3 (de) 1978-05-03
NL6814397A (de) 1970-01-26
SE339848B (de) 1971-10-25
US3662233A (en) 1972-05-09

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Legal Events

Date Code Title Description
PL Patent ceased