CH486127A - Monolithische integrierte Halbleitervorrichtung - Google Patents

Monolithische integrierte Halbleitervorrichtung

Info

Publication number
CH486127A
CH486127A CH1260369A CH1260369A CH486127A CH 486127 A CH486127 A CH 486127A CH 1260369 A CH1260369 A CH 1260369A CH 1260369 A CH1260369 A CH 1260369A CH 486127 A CH486127 A CH 486127A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
integrated semiconductor
monolithic integrated
monolithic
semiconductor
Prior art date
Application number
CH1260369A
Other languages
English (en)
Inventor
Witt David De
Rogene Gates Harlan
Platt Alan
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH486127A publication Critical patent/CH486127A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
CH1260369A 1968-09-05 1969-08-20 Monolithische integrierte Halbleitervorrichtung CH486127A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75753368A 1968-09-05 1968-09-05

Publications (1)

Publication Number Publication Date
CH486127A true CH486127A (de) 1970-02-15

Family

ID=25048180

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1260369A CH486127A (de) 1968-09-05 1969-08-20 Monolithische integrierte Halbleitervorrichtung

Country Status (5)

Country Link
US (1) US3547716A (de)
CA (1) CA931278A (de)
CH (1) CH486127A (de)
FR (1) FR2017410A1 (de)
GB (1) GB1263127A (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2256883A1 (de) * 1971-11-22 1973-05-30 Philips Nv Integrierte schaltung mit bipolartransistoren und verfahren zur herstellung dieser schaltung
EP0283066A1 (de) * 1987-03-05 1988-09-21 STMicroelectronics S.r.l. Integrierte Struktur für ein Signalübertragungsnetzwerk, insbesondere für einen Pilotschaltkreis für MOS-Leistungstransistoren
EP0314226A2 (de) * 1987-10-30 1989-05-03 STMicroelectronics S.r.l. Integrierte Struktur mit aktiven und passiven Komponenten in isolierten Wannen, die mit höheren als die Durchbruchsspannung zwischen jeder Komponente und der entsprechenden Wanne betrieben werden

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3780426A (en) * 1969-10-15 1973-12-25 Y Ono Method of forming a semiconductor circuit element in an isolated epitaxial layer
US3885998A (en) * 1969-12-05 1975-05-27 Siemens Ag Method for the simultaneous formation of semiconductor components with individually tailored isolation regions
US3769105A (en) * 1970-01-26 1973-10-30 Ibm Process for making an integrated circuit with a damping resistor in combination with a buried decoupling capacitor
US3770519A (en) * 1970-08-05 1973-11-06 Ibm Isolation diffusion method for making reduced beta transistor or diodes
US3891480A (en) * 1973-10-01 1975-06-24 Honeywell Inc Bipolar semiconductor device construction
US3898107A (en) * 1973-12-03 1975-08-05 Rca Corp Method of making a junction-isolated semiconductor integrated circuit device
US4085382A (en) * 1976-11-22 1978-04-18 Linear Technology Inc. Class B amplifier
JPS56103460A (en) * 1980-01-21 1981-08-18 Mitsubishi Electric Corp Semiconductor device
US4578692A (en) * 1984-04-16 1986-03-25 Sprague Electric Company Integrated circuit with stress isolated Hall element
US5132235A (en) * 1987-08-07 1992-07-21 Siliconix Incorporated Method for fabricating a high voltage MOS transistor
GB2215128B (en) * 1988-02-23 1991-10-16 Stc Plc Improvements in integrated circuits
US5156989A (en) * 1988-11-08 1992-10-20 Siliconix, Incorporated Complementary, isolated DMOS IC technology
US5061652A (en) * 1990-01-23 1991-10-29 International Business Machines Corporation Method of manufacturing a semiconductor device structure employing a multi-level epitaxial structure
US5159429A (en) * 1990-01-23 1992-10-27 International Business Machines Corporation Semiconductor device structure employing a multi-level epitaxial structure and method of manufacturing same
US5296047A (en) * 1992-01-28 1994-03-22 Hewlett-Packard Co. Epitaxial silicon starting material
KR0171128B1 (ko) * 1995-04-21 1999-02-01 김우중 수직형 바이폴라 트랜지스터
JP3602242B2 (ja) * 1996-02-14 2004-12-15 株式会社ルネサステクノロジ 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1047388A (de) * 1962-10-05
US3335341A (en) * 1964-03-06 1967-08-08 Westinghouse Electric Corp Diode structure in semiconductor integrated circuit and method of making the same
US3341755A (en) * 1964-03-20 1967-09-12 Westinghouse Electric Corp Switching transistor structure and method of making the same
US3312882A (en) * 1964-06-25 1967-04-04 Westinghouse Electric Corp Transistor structure and method of making, suitable for integration and exhibiting good power handling capability and frequency response
US3379584A (en) * 1964-09-04 1968-04-23 Texas Instruments Inc Semiconductor wafer with at least one epitaxial layer and methods of making same
US3327182A (en) * 1965-06-14 1967-06-20 Westinghouse Electric Corp Semiconductor integrated circuit structure and method of making the same
US3370995A (en) * 1965-08-02 1968-02-27 Texas Instruments Inc Method for fabricating electrically isolated semiconductor devices in integrated circuits

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2256883A1 (de) * 1971-11-22 1973-05-30 Philips Nv Integrierte schaltung mit bipolartransistoren und verfahren zur herstellung dieser schaltung
EP0283066A1 (de) * 1987-03-05 1988-09-21 STMicroelectronics S.r.l. Integrierte Struktur für ein Signalübertragungsnetzwerk, insbesondere für einen Pilotschaltkreis für MOS-Leistungstransistoren
US4969030A (en) * 1987-03-05 1990-11-06 Sgs-Thomson Microelectronics S.P.A. Integrated structure for a signal transfer network, in particular for a pilot circuit for MOS power transistors
EP0314226A2 (de) * 1987-10-30 1989-05-03 STMicroelectronics S.r.l. Integrierte Struktur mit aktiven und passiven Komponenten in isolierten Wannen, die mit höheren als die Durchbruchsspannung zwischen jeder Komponente und der entsprechenden Wanne betrieben werden
EP0314226A3 (de) * 1987-10-30 1989-11-15 STMicroelectronics S.r.l. Integrierte Struktur mit aktiven und passiven Komponenten in isolierten Wannen, die mit höheren als die Durchbruchsspannung zwischen jeder Komponente und der entsprechenden Wanne betrieben werden

Also Published As

Publication number Publication date
GB1263127A (en) 1972-02-09
FR2017410A1 (de) 1970-05-22
DE1943300A1 (de) 1970-03-12
US3547716A (en) 1970-12-15
CA931278A (en) 1973-07-31
DE1943300B2 (de) 1975-10-16

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Legal Events

Date Code Title Description
PL Patent ceased