CH501980A - Monolithische, integrierte Halbleiteranordnung - Google Patents

Monolithische, integrierte Halbleiteranordnung

Info

Publication number
CH501980A
CH501980A CH22870A CH22870A CH501980A CH 501980 A CH501980 A CH 501980A CH 22870 A CH22870 A CH 22870A CH 22870 A CH22870 A CH 22870A CH 501980 A CH501980 A CH 501980A
Authority
CH
Switzerland
Prior art keywords
monolithic
semiconductor device
integrated semiconductor
integrated
semiconductor
Prior art date
Application number
CH22870A
Other languages
English (en)
Inventor
David Pricer Wilbur
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH501980A publication Critical patent/CH501980A/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
    • G11C11/415—Address circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Static Random-Access Memory (AREA)
CH22870A 1969-01-15 1970-01-09 Monolithische, integrierte Halbleiteranordnung CH501980A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US79147769A 1969-01-15 1969-01-15

Publications (1)

Publication Number Publication Date
CH501980A true CH501980A (de) 1971-01-15

Family

ID=25153857

Family Applications (1)

Application Number Title Priority Date Filing Date
CH22870A CH501980A (de) 1969-01-15 1970-01-09 Monolithische, integrierte Halbleiteranordnung

Country Status (7)

Country Link
US (1) US3621302A (de)
CA (1) CA936597A (de)
CH (1) CH501980A (de)
DE (1) DE2001530C3 (de)
FR (1) FR2028333A1 (de)
GB (1) GB1234709A (de)
NL (1) NL7000547A (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3732440A (en) * 1971-12-23 1973-05-08 Ibm Address decoder latch
NL163338C (nl) * 1972-03-25 1980-08-15 Philips Nv Elektronische schakeling.
US3870901A (en) * 1973-12-10 1975-03-11 Gen Instrument Corp Method and apparatus for maintaining the charge on a storage node of a mos circuit
US4151488A (en) * 1978-02-22 1979-04-24 Raytheon Company Pulsed power supply
FR2443118A1 (fr) * 1978-11-30 1980-06-27 Ibm France Dispositif pour l'alimentation des memoires monolithiques
FR2445642A1 (fr) * 1978-12-29 1980-07-25 Radiotechnique Compelec Agencement de securite en cas de chute d'une tension d'alimentation continue
JPS56143587A (en) * 1980-03-26 1981-11-09 Fujitsu Ltd Static type memory circuit
JPH0693484B2 (ja) * 1989-11-10 1994-11-16 株式会社東芝 半導体集積回路
JP2723338B2 (ja) * 1990-04-21 1998-03-09 株式会社東芝 半導体メモリ装置
US5321658A (en) * 1990-05-31 1994-06-14 Oki Electric Industry Co., Ltd. Semiconductor memory device being coupled by auxiliary power lines to a main power line
US5701143A (en) * 1995-01-31 1997-12-23 Cirrus Logic, Inc. Circuits, systems and methods for improving row select speed in a row select memory device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3226574A (en) * 1963-09-20 1965-12-28 Martin Marietta Corp Power saving storage circuit employing controllable power source
DE1524873B2 (de) * 1967-10-05 1970-12-23 Ibm Deutschland Monolithische integrierte Speicherzelle mit kleiner Ruheleistung

Also Published As

Publication number Publication date
CA936597A (en) 1973-11-06
DE2001530C3 (de) 1974-03-07
US3621302A (en) 1971-11-16
GB1234709A (en) 1971-06-09
FR2028333A1 (de) 1970-10-09
NL7000547A (de) 1970-07-17
DE2001530A1 (de) 1970-07-30
DE2001530B2 (de) 1973-07-26

Similar Documents

Publication Publication Date Title
NL159822B (nl) Halfgeleiderinrichting.
NL162253C (nl) Halfgeleiderinrichting.
CH520407A (de) Monolithische Halbleitervorrichtung
CH507591A (de) Halbleitervorrichtung
NL161923C (nl) Halfgeleiderinrichting.
CH486127A (de) Monolithische integrierte Halbleitervorrichtung
CH531772A (de) Integrierte monolithische Halbleiterspeichereinrichtung
BE746705A (fr) Dispositif semi-conducteur
NL170786C (nl) Halfgeleider-laserinrichting.
CH504108A (de) Halbleiteranordnung
BE745906A (fr) Dispositif semi-conducteur
CH501316A (de) Monolithische Halbleitervorrichtung
CH535496A (de) Monolithische, integrierte Schaltung
BE750189A (fr) Dispositif semi-conducteur integre
CH511512A (de) Halbleitervorrichtung
CH501980A (de) Monolithische, integrierte Halbleiteranordnung
CH533363A (de) Halbleiteranordnung
BE745393A (fr) Dispositif semi-conducteur ameliore
NL163672C (nl) Halfgeleiderinrichting.
AT300961B (de) Halbleiteranordnung
BE756061A (fr) Dispositif semi-conducteur
CH499204A (de) Halbleitervorrichtung
CH513515A (de) Halbleiteranordnung
NL169803C (nl) Geintegreerde halfgeleiderschakeling.
DK117909B (da) Halvlederapparat.

Legal Events

Date Code Title Description
PL Patent ceased