CA936597A - Monolithic integrated semiconductor array having reduced power consumption - Google Patents
Monolithic integrated semiconductor array having reduced power consumptionInfo
- Publication number
- CA936597A CA936597A CA069790A CA69790A CA936597A CA 936597 A CA936597 A CA 936597A CA 069790 A CA069790 A CA 069790A CA 69790 A CA69790 A CA 69790A CA 936597 A CA936597 A CA 936597A
- Authority
- CA
- Canada
- Prior art keywords
- power consumption
- reduced power
- integrated semiconductor
- monolithic integrated
- semiconductor array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/411—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using bipolar transistors only
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/415—Address circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
- H10B99/10—Memory cells having a cross-point geometry
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Electronic Switches (AREA)
- Semiconductor Integrated Circuits (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US79147769A | 1969-01-15 | 1969-01-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA936597A true CA936597A (en) | 1973-11-06 |
Family
ID=25153857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA069790A Expired CA936597A (en) | 1969-01-15 | 1969-12-15 | Monolithic integrated semiconductor array having reduced power consumption |
Country Status (7)
Country | Link |
---|---|
US (1) | US3621302A (de) |
CA (1) | CA936597A (de) |
CH (1) | CH501980A (de) |
DE (1) | DE2001530C3 (de) |
FR (1) | FR2028333A1 (de) |
GB (1) | GB1234709A (de) |
NL (1) | NL7000547A (de) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3732440A (en) * | 1971-12-23 | 1973-05-08 | Ibm | Address decoder latch |
NL163338C (nl) * | 1972-03-25 | 1980-08-15 | Philips Nv | Elektronische schakeling. |
US3870901A (en) * | 1973-12-10 | 1975-03-11 | Gen Instrument Corp | Method and apparatus for maintaining the charge on a storage node of a mos circuit |
US4151488A (en) * | 1978-02-22 | 1979-04-24 | Raytheon Company | Pulsed power supply |
FR2443118A1 (fr) * | 1978-11-30 | 1980-06-27 | Ibm France | Dispositif pour l'alimentation des memoires monolithiques |
FR2445642A1 (fr) * | 1978-12-29 | 1980-07-25 | Radiotechnique Compelec | Agencement de securite en cas de chute d'une tension d'alimentation continue |
JPS56143587A (en) * | 1980-03-26 | 1981-11-09 | Fujitsu Ltd | Static type memory circuit |
JPH0693484B2 (ja) * | 1989-11-10 | 1994-11-16 | 株式会社東芝 | 半導体集積回路 |
JP2723338B2 (ja) * | 1990-04-21 | 1998-03-09 | 株式会社東芝 | 半導体メモリ装置 |
US5321658A (en) * | 1990-05-31 | 1994-06-14 | Oki Electric Industry Co., Ltd. | Semiconductor memory device being coupled by auxiliary power lines to a main power line |
US5701143A (en) * | 1995-01-31 | 1997-12-23 | Cirrus Logic, Inc. | Circuits, systems and methods for improving row select speed in a row select memory device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3226574A (en) * | 1963-09-20 | 1965-12-28 | Martin Marietta Corp | Power saving storage circuit employing controllable power source |
DE1524873B2 (de) * | 1967-10-05 | 1970-12-23 | Ibm Deutschland | Monolithische integrierte Speicherzelle mit kleiner Ruheleistung |
-
1969
- 1969-01-15 US US791477*A patent/US3621302A/en not_active Expired - Lifetime
- 1969-12-04 FR FR6941866A patent/FR2028333A1/fr not_active Withdrawn
- 1969-12-15 CA CA069790A patent/CA936597A/en not_active Expired
- 1969-12-15 GB GB60960/69A patent/GB1234709A/en not_active Expired
-
1970
- 1970-01-09 CH CH22870A patent/CH501980A/de not_active IP Right Cessation
- 1970-01-14 NL NL7000547A patent/NL7000547A/xx not_active Application Discontinuation
- 1970-01-14 DE DE2001530A patent/DE2001530C3/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL7000547A (de) | 1970-07-17 |
DE2001530B2 (de) | 1973-07-26 |
FR2028333A1 (de) | 1970-10-09 |
CH501980A (de) | 1971-01-15 |
US3621302A (en) | 1971-11-16 |
GB1234709A (en) | 1971-06-09 |
DE2001530C3 (de) | 1974-03-07 |
DE2001530A1 (de) | 1970-07-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CA935561A (en) | Unitary high power semiconductor subassembly | |
CA936597A (en) | Monolithic integrated semiconductor array having reduced power consumption | |
AU424919B2 (en) | Semiconductor transducer | |
CA943263A (en) | Semiconductor arrangements | |
AU449028B2 (en) | Integrated semiconductor arrangement | |
CA827343A (en) | Planar semiconductor structure | |
CA934071A (en) | Monolithic semiconductor memory | |
AU1909670A (en) | Integrated semiconductor arrangement | |
CA912700A (en) | Monolithic semiconductor memory | |
AU446645B2 (en) | Semiconductor arrangement | |
CA839442A (en) | Semiconductor microcircuit arrays | |
AU452335B2 (en) | Monolithic semiconductor structure | |
AU419886B2 (en) | Semiconductor microcircuit arrays | |
AU449113B2 (en) | Barrier-layer-free semiconductor element | |
CA780079A (en) | Photovoltaic array | |
CA805340A (en) | Thermoelectric module with diagonal construction | |
AU5581869A (en) | Semiconductor arrangement | |
AU2099670A (en) | Semiconductor arrangement | |
CA829543A (en) | Semiconductor diode | |
CA808843A (en) | Power cryotron | |
CA727335A (en) | Semiconductor photovoltaic devices | |
AU2562567A (en) | Semiconductor microcircuit arrays | |
AU1437770A (en) | Barrier-layer-free semiconductor element | |
AU292284B2 (en) | Semiconductor element | |
AU431387B2 (en) | Integrated semiconductor devices |