SE348320B - - Google Patents
Info
- Publication number
- SE348320B SE348320B SE17363/66A SE1736366A SE348320B SE 348320 B SE348320 B SE 348320B SE 17363/66 A SE17363/66 A SE 17363/66A SE 1736366 A SE1736366 A SE 1736366A SE 348320 B SE348320 B SE 348320B
- Authority
- SE
- Sweden
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB54333/65A GB1136569A (en) | 1965-12-22 | 1965-12-22 | Insulated gate field effect transistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE348320B true SE348320B (xx) | 1972-08-28 |
Family
ID=10470665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE17363/66A SE348320B (xx) | 1965-12-22 | 1966-12-19 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3436623A (xx) |
| JP (1) | JPS4931592B1 (xx) |
| CH (1) | CH470085A (xx) |
| DE (1) | DE1564475C2 (xx) |
| FR (1) | FR1505959A (xx) |
| GB (2) | GB1136569A (xx) |
| NL (1) | NL155130B (xx) |
| SE (1) | SE348320B (xx) |
Families Citing this family (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3573571A (en) * | 1967-10-13 | 1971-04-06 | Gen Electric | Surface-diffused transistor with isolated field plate |
| US3686544A (en) * | 1969-02-10 | 1972-08-22 | Philips Corp | Mosfet with dual dielectric of titanium dioxide on silicon dioxide to prevent surface current migration path |
| US3577210A (en) * | 1969-02-17 | 1971-05-04 | Hughes Aircraft Co | Solid-state storage device |
| JPS5145438B1 (xx) * | 1971-06-25 | 1976-12-03 | ||
| JPS5633867B2 (xx) * | 1971-12-08 | 1981-08-06 | ||
| JPS5535865B2 (xx) * | 1972-12-07 | 1980-09-17 | ||
| JPS5154789A (xx) * | 1974-11-09 | 1976-05-14 | Nippon Electric Co | |
| US4041519A (en) * | 1975-02-10 | 1977-08-09 | Melen Roger D | Low transient effect switching device and method |
| US4057820A (en) * | 1976-06-29 | 1977-11-08 | Westinghouse Electric Corporation | Dual gate MNOS transistor |
| DE2729656A1 (de) * | 1977-06-30 | 1979-01-11 | Siemens Ag | Feldeffekttransistor mit extrem kurzer kanallaenge |
| DE2729658A1 (de) * | 1977-06-30 | 1979-01-11 | Siemens Ag | Feldeffekttransistor mit extrem kurzer kanallaenge |
| DE2729657A1 (de) * | 1977-06-30 | 1979-01-11 | Siemens Ag | Feldeffekttransistor mit extrem kurzer kanallaenge |
| US4245165A (en) * | 1978-11-29 | 1981-01-13 | International Business Machines Corporation | Reversible electrically variable active parameter trimming apparatus utilizing floating gate as control |
| US5187552A (en) * | 1979-03-28 | 1993-02-16 | Hendrickson Thomas E | Shielded field-effect transistor devices |
| US5202574A (en) * | 1980-05-02 | 1993-04-13 | Texas Instruments Incorporated | Semiconductor having improved interlevel conductor insulation |
| FR2499769A1 (fr) * | 1981-02-06 | 1982-08-13 | Efcis | Transistor a effet de champ a grille isolee ayant une capacite parasite reduite et procede de fabrication |
| US4499482A (en) * | 1981-12-22 | 1985-02-12 | Levine Michael A | Weak-source for cryogenic semiconductor device |
| GB2118774B (en) * | 1982-02-25 | 1985-11-27 | Sharp Kk | Insulated gate thin film transistor |
| JPS61120466A (ja) * | 1984-11-16 | 1986-06-07 | Fujitsu Ltd | 半導体光検出素子 |
| ATE77177T1 (de) * | 1985-10-04 | 1992-06-15 | Hosiden Corp | Duennfilmtransistor und verfahren zu seiner herstellung. |
| US5012315A (en) * | 1989-01-09 | 1991-04-30 | Regents Of University Of Minnesota | Split-gate field effect transistor |
| US5079620A (en) * | 1989-01-09 | 1992-01-07 | Regents Of The University Of Minnesota | Split-gate field effect transistor |
| US5124769A (en) * | 1990-03-02 | 1992-06-23 | Nippon Telegraph And Telephone Corporation | Thin film transistor |
| JPH03280071A (ja) * | 1990-03-29 | 1991-12-11 | Konica Corp | 印刷版の形成方法 |
| JPH0590587A (ja) * | 1991-09-30 | 1993-04-09 | Sony Corp | 絶縁ゲート型電界効果トランジスタ |
| JP3548237B2 (ja) * | 1994-08-29 | 2004-07-28 | シャープ株式会社 | 薄膜トランジスタ |
| US7064034B2 (en) | 2002-07-02 | 2006-06-20 | Sandisk Corporation | Technique for fabricating logic elements using multiple gate layers |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL301884A (xx) * | 1962-12-17 | |||
| US3339128A (en) * | 1964-07-31 | 1967-08-29 | Rca Corp | Insulated offset gate field effect transistor |
| US3355598A (en) * | 1964-11-25 | 1967-11-28 | Rca Corp | Integrated logic arrays employing insulated-gate field-effect devices having a common source region and shared gates |
-
1965
- 1965-12-22 GB GB54333/65A patent/GB1136569A/en not_active Expired
- 1965-12-22 GB GB40362/68A patent/GB1139170A/en not_active Expired
-
1966
- 1966-12-19 CH CH1815566A patent/CH470085A/de unknown
- 1966-12-19 SE SE17363/66A patent/SE348320B/xx unknown
- 1966-12-20 DE DE1564475A patent/DE1564475C2/de not_active Expired
- 1966-12-20 JP JP41083031A patent/JPS4931592B1/ja active Pending
- 1966-12-21 NL NL666617926A patent/NL155130B/xx not_active IP Right Cessation
- 1966-12-22 FR FR88473A patent/FR1505959A/fr not_active Expired
- 1966-12-22 US US603906A patent/US3436623A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4931592B1 (xx) | 1974-08-22 |
| DE1564475A1 (de) | 1969-12-11 |
| CH470085A (de) | 1969-03-15 |
| NL6617926A (xx) | 1967-06-23 |
| US3436623A (en) | 1969-04-01 |
| GB1139170A (en) | 1969-01-08 |
| FR1505959A (fr) | 1967-12-15 |
| NL155130B (nl) | 1977-11-15 |
| DE1564475C2 (de) | 1984-01-26 |
| GB1136569A (en) | 1968-12-11 |